D 2004 UK Metal Gate DMOS Push Pull FET from the SEMELAB databook 1993 The cutted pins are the Drains, opposite the Gates, The flange is the common source Maximum Ratings : Vds = 65 V Vgs = +/- 20 V Id per side =2 A Pd = 58 W Tj = 200 grdC. Tstg = -65... 150 grdC. Thermal Resistance Junction to Case : max 3 grdC./W Characteristics : Idss at Vds=28V : max 0.4 mA Gate threshold voltage at Id=10mA : min 1 V, max 5 V Forward Transconductance at Vds=10V,id=0.4A : min 0.36 mhos Capacitances per side : Input at Vds=0, Vgs=-5V : max 24 pF Output at Vds=28V, Vgs=0 : max 12 pF Reverse Transfer at Vds=28V : max 1 pF Total device at Po=10W, Vds=28V, Id quiet=0.8 A, f=1GHz : Common Source Power Gain : min 13 dB Drain Efficiency : min 40 % Load Mismatch Tolerance : min 20:1 ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
D40D5 NPN Power Transistor
From the HARRIS (GE and RCA) databook 1989:
Pins: (Left)Emitter - Base - Collector = Tab (right side = cutted side)
Maximum Ratings:
Vceo = 45 V
Vces = 60 V
Vebo = 5 V
Ic = 1 A
Ic peak = 1.5 A
Ib = 0.5 A
Ptot = 1.67 W at T ambient = 25 grdC.
= 6.25 W at T case = 25 grdC.
Tj = Tstg = -55...150 grdC.
Thermal Resistance Junction to Case: 20 grdC./W
Junction to Ambient : 75 grdC./W
Characteristics:
Vceo(sustaining) at Ic=10mA : min 45 V
Ices at Vce=60V, Tc=150 grdC.: typ 1 uA
DC Current Gain at Ic=100mA,Vce=2V : min 120, max 360
at Ic=1A, Vce=2V : min 10
Vce(sat) at Ic=500mA, Ib=50mA : max 0.5 V
Vbe(sat) at Ic=500mA, Ib=50mA : max 1.5 V
Coll. Capacitance at Vcb=10V,f=1MHz : typ 8 pF
Current Gain- Bandwidth Product at Ic=20mA,Vce=10V : typ 200 MHz
Times at resistive load, Ic=1A, Ib1=Ib2=100mA, Vcc=30V:
Delay + Rise : typ 25 ns
Storage : typ 200 ns
Fall : typ 50 ns
Safe Region of Operation, from a very very little diagram:
DC : 1A until 4V, Knee at 130mA/35V, 30mA/60V
100us pulse: 1.5A until 5V, knee at 200mA/37V, 45mA/60V
1 us pulse: 1.5A until 6V, knee at 270mA/37V, 70mA/60V
The diagram for the current gain is NOT flat. The hill is between
Ic=10mA and 100mA.
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
D64VS5 NPN Power Transistor
from the HARRIS- databook Bipolar Power Devices(1989)
TO3 case, Collector = Case= Flange
Maximum Ratings:
Vceo = 400V
Vcex = 400V
Vcev = 550V
Vebo = 7 V
Ic continuous = 15 A
peak, pulse < 5ms : 30A
Ib continuous = 5 A
peak, pulse < 5ms : 10A
Emitter Current continuous = 20A
peak, pulse < 5ms : 35A
Total Power Diss. at 25grdC : 195 W
at 100grdC : 111W
Operating and Storage Junction Temp. = -65 to +200 grdC
Thermal Resistance Junction to Case = 0.9 grdC/W
DC Current Gain at IC = 10A, Vce=2V : hFE = min 10
Coll.Em.Saturation Voltage at Ic=10A,Ib=1,67A : max 0.7 V
Current Gain - Bandwidth Product at Ic=1A, Vce=10V :
ft = 15 to 50MHz
Output Capacitance at Vcb=10V : Cob = 150 to 360 pF
Times at Vcc=250V, Ic=15A, Ib=2.5A :
Delay Time : 0.1 us
Rise Time : 0.5 us
Storage Time at Ib= -3A : 2.5 us
Fall Time : 0.4 us
Second Breakdown Limits :
Continuous Current: 0.8 A at 45 V to 0 A at 300 V
5 ms Pulse : 0.8 A at 90 V to 0.15 A at 400 V
1 ms Pulse : 12A at 150V via 0.8A at 230V to 0.5A at 400V
______________________________________
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______________________________________ DMK2791 from a family-datasheet for a lot of types by ALPHA. GaAs Schottky Barrier Mixer Diode Beam-Lead Single Diode for the mm-Band Maximum Ratings: Reverse Voltage : 4 V Current : 50 mA Dissipated Power : 75mW Operating Temp.: -65 to 150 grdC. Storage Temp.: -65 to 175 grdC. Characteristics for the mm - band at 25 grdC.: Vf at 1 mA : min 600mV, max 800mV Cj at 0V, 1MHz : max 0.07 pF Rs at 10 mA : max 8 Ohm VB at 10uA : max 3 V NF(ssb) at LO=7mW, N IF = 1dB :max 7.5 dB The Datasheet has a diagram for Noise Figure and IF Impedance vs. Local Oszillator Drive, but no associated test circuit nor parameters. From a diagram Junction Capacitance Range vs. Voltage: 0.14pF to 0.18pF at +0.3V 0.105pF to 0.12pF at 0 V 0.08pf to 0.11pF at -2V 0.06pF to 0.1 pF at -5V ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ DSA80-14 von BBC=Brown Boweri wurde bei uns (AEG-TELEFUNKEN) 1976 verwendet. Ich habe leider kein Originaldatenblatt Spitzen-Sperrspannung = 1400 V Durchbruchspannung = 1550 V Dauergrenzstrom bei 100 grad C , 50 Hz = 110 A Max Durchlaßstrom = 175 A Stromstoß 10 ms = 1800 A Stoß-Sperrverlustleistung 180 grad C, 10 us = 28 kW max Sperrschichttemp. 180 grad C Kennwerte: Flußspannung bei 350 A, 180 grad C : max 1,4 V Thermischer Widerstand =< 0,5 K/W ______________________________________
Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!
______________________________________ DTA114.. is a large family of digital PNP transistors. The datasheet for all members of the family has 12 pages. DTA114TS PNP digital transistor with resistor from the base to the input pin. Case similar TO92 : 4 x 2 mm x 3 mm high Bottom view: _______ | E C B | \_____/ Absolute Maximum Ratings: Vcbo = -50 V Vceo = -50 V Vebo = - 5 V Ic = - 100 mA Pc = 300 mW Tj = 125 grdC. Tstg = -55 to 125 gtdC. Characteristics at 25 grdC.: Vce(sat) at Ic=-10mA, Ib=-1mA : max -0.3 V h FE at Ic=-1mA, Vce = -5V : min 100 , typ 250, max 600 R1 from the Base to the Base Pin : typ 10 kOhm fT at Vce=-10V, Ie=5 mA, f=100MHz : typ 250 MHz ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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Unter DTA124 finde ich viele verschiedene Transistortypen.
Hier kommt es also sehr auf die beiden Buchstaben am Ende an.
Die höchste vorkommende Coll.-Em. Spannung ist: 50 V .
Ic max ist immer 100 mA. Bleiben für den Ersatz noch die
Unterschiede an der Basis wichtig.
Es handelt sich nämlich um sogenannte Digitaltransistoren.
Die haben vor der Basis des PNP- Schalttransistors beim Typ...
DTA124E... einen Spannungsteiler,
22 kOhm Eingang zur Basis, 22 kOhm Basis zu Emitter.
DTA124G... nur 22 kOhm zum Emitter.
DTA124T... nur Vorwiderstand 22 kOhm
DTA124X... wie Typ E, jedoch 10 kOhm parallel zur BE-Strecke
Wahrscheinlich funktioniert Ihre Schaltung mit jedem normalen PNP-
Transistor, wenn Sie die Widerstände extern hinzufügen.
Die diversen Bauformen mit Ausnahme der SMD Gehäuse haben die bei
japanischen Transistoren übliche Anschlußreihenfolge E C B.
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DTC124.. is a large family of digital NPN transistors. The
datasheet for all members of the family has 12 pages.
There are resistors from the base to emitter(R2) and/or from
the base to the base-pin (R1).
The 2 suffix letters: the first letter secifies electrical
differences, the second specifies different cases.
DTC124E...: R1 = 22 kOhm, R2 = 22 kOhm
G...: R1 = 0 R2 = 22 kOhm
T...: R1 = 22 kOhm, without R2
X...: R1 = 22 kOhm, R2/R1 : min 1.7, typ 2.1, max 2.6
Absolute Maximum Ratings for all Types:
Vceo (Vcer) = 50 V
Vebo = 5 V ( DTC124E and ..X : Vi=-10 to +40V)
Ic = 100 mA
Tj = Tstg= -55 to 125 grdC.
Characteristics:
Vce(sat) at Ic=10mA, Ib=0.5mA : max 0.3V
(specified for DTC124G... and ...T...)
HFE at Ic=5mA, Vce=5V : min 56 (for DTC124G.. only)
at Ic=1mA, Vce=5V : min 100, max 600 ( for RTC124T.. only )
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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Unter DTC143 gibt es eine ganze Familie von Digitaltransistoren.
Typ DTC143E hat einen Basisspannungsteiler mit 4,7 kOhm am Eingang
zu Basis und 1 kOhm zwischen Basis und Emitter.
Typ DTC143T hat nur den 4,7 kOhm vom Eingangspin zur Basis.
Typ DTC143X hat einen Spannungsteiler 4,7 kOhm zu 2.1 kOhm.
Typ DTC143Z hat einen Spannungsteiler 4,7 kOhm zu 10 kOhm.
Einheitliche Werte sind:
Maximum Ratings :
Vcbo = 50V ( beziehungsweise Vcc)
Vebo = 5 V ( bzw. gemäß Spannungsteiler)
Ic = 100 mA
Pc = 300 mW (SMD Minigehäuse 200 mW)
Tj = Tstg = -55 to 125 grdC.
Characteristics :
Vce(sat) at Ic=5mA, Ib=0.25mA ( nur beim Typ ..T gleich
Eingangsstrom ! ): max 0.3 V
Stromverstärkung bei Ic=1mA, Vce=5V : min 100, typ 250, max 600
Da ist auch eine Transitfrequenz von 250 MHz bei 10V, 5mA und
100MHz angegeben, die japanische Fußnote dazu kann ich aber
natürlich nicht lesen. Da wird wohl stehen, daß dieser Wert
für den Transistorchip ohne Vorwiderstand gilt, denn mit 4,7 kOhm
und den üblichen Eingangskapazitäten ist das wohl nicht möglich.
DTC143TS NPN digital transistor with resistor from the base
to the input pin.
Absolute Maximum Ratings:
Vcbo = 50 V
Vceo = 50 V
Vebo = 5 V
Ic = 100 mA
Pc = 300 mW
Tj = 125 grdC.
Tstg = -55 to 125 gtdC.
Characteristics at 25 grdC.:
Vce(sat) at Ic=5mA, Ib=0.25mA : max 0.3 V
h FE at Ic=1mA, Vce = 5V : min 100 , typ 250, max 600
R1 from the Base to the Base Pin : typ 4.7 kOhm
fT at Vce=10V, Ie=-5 mA, f=100MHz : typ 250 MHz
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ DV1220S : Flanschgehäuse mit 4 Fahnen, Drainfahne angeschrägt, gegenüber Gate. DV1220W : Viereckig, einseitiger Flansch ähnlich TO220, 6 Fahnen, an den Ecken 4 x Source, Drain angeschrägt. Absolute Maximum Ratings: Vgs = 30 V Vds = 50 V Vdg = 50 V Id = 4 A Pd = 80 W Junction Temp. 200grdC: Storage Temp. -65 to 150 grdC: Thermal Resistance Junction to Case: 2.2 grdC/W (W-Typ: 1.76 grdC./W) Characteristics at f=175 MHz, Vdd=12.5V, Id=2A : Pout at Pin=2W : min 18 W, typ 20 W Drain Efficiency: min 55%, typ 60% Transconductance: typ 0.8 Mho ( S ) Capacitances at Vds=12.5V, Vgs=0 : Output : typ 98 pF Reverse Transfer : typ 15 pF Input : typ 82 pF Source Impedance at Pout=20W: typ 1.6 + j 6.5 Ohm Load Impedance at ...: typ 2 + j 2 Ohm ______________________________________
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DV28120 N-Channel Enhancement RF POWER FET
Type U : X- Case : Drain is the cutted lead, Gate is opposite.
Type T : ||| - Case : Drain is the small lead, Gate is
opposite, 4 corners = Emitter.
Absolute Maximum Ratings:
Vgs = 40 V
Vds = 80 V
Vdg = 80 V
Id = 12 A DC
Ptot at case=25 grdC.: 240 grdC.
Tj = 200 grdC.
Tstg = -65 to 150 grdC.
Thermal Resistance Junction to Case:
0.73 GrdC./W
Characteristics :
Idss at Vds=30V, Vgs=0 : max 6 mA
Igss at Vgs=40V, Vds=0 : max 100 nA
DC Forward Transconductance at Vds=10V, Id=6A,
delta Vgs=1V : min 1.2 S, typ 1.8 S
Id(on) at Vds=30V, Vgs=10V : typ 12A
Gate Threshold Volt. at Id=600 mA, Vds=Vgs : min 2 V, max 6 V
Capacitances at Vds=28V, Vgs=0, f=1MHz, common source :
Input : max 300 pF
Output: max 240 pF
Reverse Transfer : max 35 pF
175 MHz Test Circuit at Vdd=28V, Idq=0.6A, Po=120W :
Power Gain : min 9 dB ( Typ T : min 10 dB )
Drain Efficiency : typ 65 %
Load Mismatch Tolerance min 30 : 1
From diagrams:
Equivalent Large Signal Input Impedance vs. Frequency:
50 MHz: 0.25 -j 8 Ohm
100 MHz: 0,28 -j 3 Ohm
150 MHz: 0.29 -j 1 Ohm
200 MHz: 0.3 Ohm (-j 0)
Output Impedance:
50 MHz: 1.8 -j 1.3 Ohm
100 MHz: 1.5 -j 1.3 Ohm
150 MHz: 1.4 -j 0.6 Ohm
200 MHz: 1.3 +j 0.5 Ohm
Power Out vs. Power In at 28V, 175 MHz:
70W/4W; 110W/8W; 128W/12W; 138W/20W
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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DV2880
from the SILICONIX databook VMOS Power FETs 1981.
Absolute Maximum Ratings:
Vgs = 40V
Vds = 80V
Vdg = 80V
Id (DC) = 8 A
Ptot = 160 W
Junction Temp : -65 ... 200 grdC.
Thermal Resistance Junction to Case : 1.1 grdC./W
Characteristics:
DC forward Transconductance at Vds=4V, Id=4A :
min 0.8 S, typ 1.1 S
On State Drain Current at Vds=30V, Vgs=10V : typ 7 A
Gate Threshold Voltage at Vgs=Vds, Id=400mA : min 2V, max 6V
Capacitances at Vgs=0V, Vds=30V, f=1MHz :
Common Source Input Cap.: max 210 pF
Common Source Output Cap.: max 175 pF
Reverse Transfer Cap.: max 25 pF
Common Source Power Gain at Vdd=28V, Po=80W,
f=175MHz, Idquiet=0.4A : min 10 dB
Drain Efficiency at the same conds : typ 65 %
Load Mismatch Tolerance at the same conds.: min 30:1
Noise Figure at Vds=28V, Id=0.4A, f=175MHz : typ 4 dB
______________________________________
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______________________________________ DVA6735 Multiplier Diodes Family from an ALPHA Industries shortform info only: Epitaxial Silicon Mesa A-Mode Multiplier Diodes ....The Alpha A-Mode diode combines the characteristics of the Step Recovery- Diode and the Square Law Varactor to optimize performance in LOW ORDER multiplication. In operation the A-Mode diode is driven into forward conduction to use the storage characteristics of the step recovery diode, but it also uses the reactance charge.... Operating and Storage: -65 to 200 grdC. DVA6735-06 : Reverse Breakdown Voltage : min 30 V Junction Capacitance at -6V, 1 MHz : 0.25 to 0.5 pF Cutoff Frequency at -6V : min 200 GHz Minority Carrier Lifetime at If=10mA, Ir=6mA : min 10 ns Transition Time at If=10mA, Vr=10V : max 150 ps Output Frequency Range : 12...15 GHz Typical Efficiency as a Tripler : 30 % Thermal Resistance : max 75 grdC./W DVA6735-12 : Reverse Breakdown Voltage : min 30 V Junction Capacitance at -6V, 1 MHz : 0.5 to 1 pF Cutoff Frequency at -6V : min 200 GHz Minority Carrier Lifetime at If=10mA, Ir=6mA : min 10 ns Transition Time at If=10mA, Vr=10V : max 150 ps Output Frequency Range : 8...12 GHz Typical Efficiency as a Tripler : 35 % Thermal Resistance : max 50 grdC./W DVA6735-18 : Reverse Breakdown Voltage : min 45 V Junction Capacitance at -6V, 1 MHz : 0.5 to 1 pF Cutoff Frequency at -6V : min 175 GHz Minority Carrier Lifetime at If=10mA, Ir=6mA : min 20 ns Transition Time at If=10mA, Vr=10V : max 200 ps Output Frequency Range : 8...12 GHz Typical Efficiency as a Tripler : 40 % Thermal Resistance : max 50 grdC./W DVA6735-24 : Reverse Breakdown Voltage : min 45 V Junction Capacitance at -6V, 1 MHz : 1 to 1.5 pF Cutoff Frequency at -6V : min 160 GHz Minority Carrier Lifetime at If=10mA, Ir=6mA : min 25 ns Transition Time at If=10mA, Vr=10V : max 200 ps Output Frequency Range : 5...8 GHz Typical Efficiency as a Tripler : 50 % Thermal Resistance : max 25 grdC./W ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!