Semiconductor- Types E... (without ICs)

ESM16  NPN Leisungstransistor im TO3-Gehäuse
von Thomson ,1981.

Absolute Maximum Ratings:
Vcbo = 450 V
Vceo = 400 V
Vebo = 10 V
Ic = 10 A ( 15A for 10 ms )
Ib = 2 A
Ptot = 150 W at 25 grdC.
Junction Temp.: -65 to 200 grdC.

Thermal Resistance Junction to Case : max 1.17 grdC./W

Characteristics at 25 grdC.:
Static Forward Current Transfer Ratio at Vce = 10V:
   at Ic=0.4 A : min 20, max 80
   at Ic=2A : min 30
   at Ic=5A : min 20
Coll.Emitter Saturation Voltage (Basis-Emitter Voltage):
  at Ic=2A, Ib=0.25A : max 0.5 V  (Vbesat = max 1V )
  at Ic=5A, Ib=1A : max 1 V       (Vbesat = max 1.5V )
Second Breakdown Coll.Current at Vce=80V,t=1s : min 0.4 A 
  Derating: at 200 grdC. 0.12A
Transition Frequ. at Vce=10V, Ic=0.2A, f=10MHz : min 5 MHz
Times at Vcc=30V, Ic=5A, Ib = 1A / -1A :
  Turn ON (Delay + Rise) typ 0.85 us
  Fall : typ 0.5 us
  Carrier Storage: typ 1.5 us
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!

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ESM3004  NPN high voltage switching transistor
  manufactured 1982 by THOMSON-CSF.

Absolute limiting ratings:
Vceo = 400V
Vcev at Vbe=-1.5V = 600V
Vebo = 10V
Ic RMS = 120A
Icm = 150A (pulse < 1ms)
Ib RMS = 20A
Ibm = 40A (pulse < 1ms)
Power Diss. at Tcase=75grdC = 400W
Junction Temperature: -65 to 175 grdC

Thermal resistance junction to case: 0.25 grdC/W

Characteristics at 25grdC:
Vce sat (pulse tested t < 300us) 
   at Ic=65A, Ib=13A : max 1.5V
   at Ic=100A, Ib=33A , Tj=100 grdC.: max 2V
Vbe sat at Ic=65A, Ib=13A: max 2.2V
Switching Times on resistive load, Vcc=200V, Ic=50A, 
  Ib1 = -Ib2 = 10 A :
  Rise: typ 1us, max 1.5us
  Storage: max 3.5 us
  Fall: typ 0.5 us, max 1 us
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!

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ESM3005  NPN high voltage switching transistor
  manufactured 1982 by THOMSON-CSF.

Absolute limiting ratings:
Vceo = 500V
Vcev at Vbe=-1.5V = 600V
Vebo = 10V
Ic RMS = 120A
Icm = 150A (pulse < 1ms)
Ib RMS = 20A
Ibm = 40A (pulse < 1ms)
Power Diss. at Tcase=75grdC = 400W
Junction Temperature: -65 to 175 grdC

Thermal resistance junction to case: 0.25 grdC/W

Characteristics at 25grdC:
Vce sat (pulse tested t < 300us) 
   at Ic=50A, Ib=10A : max 1.5V
   at Ic=80A, Ib=27A , Tj=100 grdC.: max 2V
Vbe sat at Ic=50A, Ib=10A: max 2.2V
Switching Times on resistive load, Vcc=200V, Ic=50A, 
  Ib1 = -Ib2 = 10 A :
  Rise: typ 1us, max 1.5us
  Storage: max 3.5 us
  Fall: typ 0.5 us, max 1 us

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Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!

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ESM752  NPN high voltage switching transistor
  manufactured 1982 by THOMSON-CSF.

Absolute limiting ratings at 25 grdC.:
Vceo = 600 V (A-type : 700 V )
Vcev at Vbe=-3V : 900 V (A-type : 1000 V )
Vebo = 7 V
Ic  = 24 A
Icm = 50 A (pulse < 10 ms)
Ib  = 8 A
Ibm = 20 A (pulse < 10 ms)
Power Diss. = 150 W
Junction Temperature: 150 grdC

Thermal resistance junction to case: 0.83 grdC/W

Characteristics at 25grdC:
Vce sat at Ic=20 A, Ib=10A: max 2.5 V
Vce sat at Ic=12 A, Ib= 3A, Tcase = 100grdC.: max 1.8 V
Vbe sat at Ic=12A, Ib=3 A : max 2 V
Transit Frequency fT at f=1MHz, Ic=1A, Vce=10V : typ 5 MHz
C22b at f=1MHz, Vce=10V : typ 460 pF
Switching Times on resistive load, Vcc=300V, Ic=12A, Ib=-Ib=3A:
  on : typ 0.4 us, max 0.8 us
  Storage: typ 2.2 us, max 4 us
  Fall: typ 0.35 us, max 0.7 us
Switching Times , inductive load, Vcc=300V, Ic=12A, LB=1.5uH, I Bend=3A, 
Vb=-5V :
  Storage : typ 3.5 us, 
     at 100grdC.: typ 4.2 us, max 7 us
  Fall : typ 0.15 us
     at 100grdC.: typ 0.33 us, max 0.6 us

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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!

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