HGTP 10N50 F1D Isolated Gate Bipolar Transistor
TO 220-Case, Gate on the left, emitter on the right.
Absolute maximum ratings at 15 C
BVces = 500V
BVcgr = 500V
Coll. contin.curr. at 25 C = 12 A
at 90 C : 10A
pulsed : 12A
Vges = + - 20V
Anti-parallel diode at 25 C : 16A
at 90 C : 10A
Power Diss total 75 W
derating 0,6W/grdC
Characteristics:
Gate Threshold Volt. at Vge=Vce;Ic=1mA : 2...4,5V
C-E-On-Volt. at Ic=5A; Vge=10V : max 2,5 V
at Vge=15V : max 2,2 V
On State Gate Charge at Ic=5A; Vce=10V : typ 13,4 nC
Times for Ic=5A; Rload=80Ohm; Vce=400V;
Vge=10V; Rg=25Ohm; 150gradC :
turn On delay: typ 45 ns
rise : 35ns
turn off delay : 130 ns
fall : 1400 ns
Thermal resist. junct. to case max 2grdC/Watt
Diode forward at Iec=10A : max 1.7V
Diode reverse recovery time : max 60ns
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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HMF1202 Power GaAs FET
From a datasheet HARRIS MICROWAVE SEM. 1985
The triangle cutted pin is the drain, opposite is gate,
the flange is source.
Absolute Maximum Ratings :
Vds = 14 V
Vgs = 8 V
Forward Gate Current: max 30 mA recommended
Ptot = 4 W
T channel = 300 grdC., recommended : 180 grdC.
Thermal Resistance Channel to Case : 40 grdC./W
Specifications at 25 grdC.:
Idss at Vds=3V, Vgs=0 : min 240 mA, typ 320 mA, max 400 mA
Pinch off Voltage at Vds=3V, Ids=4mA :
min -4.5 V, typ -3.5 V, max -2 V
Transconductance at Vds=3V, Id=Idss : typ 140 mS
Maximum 1dB Gain Compression Output Power :
at 4 GHz : typ 27.5 dBm
at 8 GHz : min 26.5 dBm, typ 27.5 dBm
at 12GHz : typ 27 dBm
Associated Gain:
at 4 GHz : typ 12.5 dB
at 8 GHz : min 6.5 dB, typ 7.5 dB
at 12GHz : typ 5 dB
Power added efficiency at 8 GHz : typ 35 %
The datasheet has a table for S- parameters at Vds=8V,
Ids=50% Idss, 2 GHz .... 14 GHz.
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ HP5082-0018 Step Recovery Diode Chips From the Hewlett-Packard databook 1993: Applications : Medium and low power multipliers. Output Frequencies through 40 GHz. Maximum Ratings : Breakdown Voltage at Ir=10uA : 25 V Die Temp : 310 grdC. for 1 minute Tj = Tstg = -60 to 200 grdC. Specifications: Chip Capacitance at Vr=10V, f=1MHz : typ 0.5 pF Lifetime at If=10mA, Ir=6mA : typ 20 ns Transition Time : typ 70 ps Charge Level : typ 200 pc Nearest Equivalent Packaged Part No: HP5082-0253. ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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HPWR6504 N- channel enhancement power MOSFET
HEWLETT PACKARD 1980
TO3 case
Maximum Ratings:
Vds = 400 V
Id = 5 A
Id (pulsed) = 10 A
Vgs = +/- 40 V
Pd = 90 W
Drain Current, Clamped Inductive, 100uH,
at Clamp Voltage = 0.8 Vdss : 5 A
Tj and Tstg : -55 to 150 grdC.
Thermal Resistance Junction to Case : max 1.39 grdC./W
Specifications at 25 grdC.:
Leakage Current Idss at Vds=360V, Vgs=0 : max 10 uA
On State Resistance at Vgs=20V, Id=3A,: max 1 Ohm
at 125 grdC. : typ 2 Ohm
Forward Transconductance at Vds=20V, Id=3A : typ 1.8 S
Gate threshold voltage at Id=1mA, Vgd=0 : min 3 V, max 7 V
Capacitances at Vds=50V, Vgs=0, f=1 MHz :
Input : typ 1000 pF
Reverse Transfer : typ 30 pF
Output : typ 100 pF
Times at Vdd=200V, Id=3A :
Turn ON delay : typ 30 ns
Rise : typ 20 ns
Turn OFF delay : typ 60 ns
Fall : typ 15 ns
Substrate- Drain Diode:
Continuous Reverse Drain Current : max 5 A
(pulsed : max 10 A )
Forward Voltage at 5 A : typ 0.9 V
Reverse Recovery Time at 10A, 150 grdC., dIf/dt=100A/us : typ 150 ns
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ HSCH3207 from the Hewlett Packard databook 1993. Es ist eine Pille, 1,4mm Durchmesser, 1,3 mm hoch. Die Version mit normalem Glasgehäuse heißt HSCH3486. Maximum Ratings : CW Power Dissipation: 200 mW Pulse, 1 us, Du=0.001 : 1W Top = Tstg = -65 to 150 grdC. Specifications at 25 grdC. Maximum Tangential Sensitivity at 10 GHz, Video Bandwidth = 2MHz : -42 dBm Minimum Voltage Sensitivity at Power in = -30 dBm, Rl=10MOhm, Ibias=0, 10 GHz : 8 mV/uW Video Resistance (at the same test conditions): min 2 kOhm, max 8 kOhm Total Capacitance at Vr=0, f=1MHz : typ 0.3 pF ______________________________________
Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!
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HSM221C
from a datasheet in the HITACHI Diode databook 1990.
Marking of the (~SOT23)- case : A2
C
__|__
|_____| top view
| |
A n.c.
Absolute Maximum Ratings :
Vr = 80 V
Vr (peak) = 85 V
Io = 100 mA
If(peak) = 300 mA
If(surge) = 4 A
Tj = Tstg = -55 to 125 grdC.
Characteristics :
Vf at If=10mA : typ o.76 V, max 1 V
at If=100mA: typ 0.97 V, max 1.2 V
Ir at Vr=80V : max 0.1 uA
C at Vr=0, f=1MHz : max 2 pF
Recovery Time at If=10mA, Vr=6V, RL=50 Ohm : max 3 ns
From a diagram typ. C vs. Vr :
0.9 pF at 1V to 0.65 pF at 80 V
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ HSMP 4890 PIN- Diode zusammen mit vielen anderen PIN- Dioden in einem 8-seitigen Datenblatt. Die wichtigsten Daten sind: Gehäuse SOT 23, Marking Code GA. Einzeldiode für Schalter für 500MHz bis 3 GHz. Dual Anode Configuration, Cathode = Seite, wo nur 1 Pin. Absolute Maximum Ratings: Peak Inverse Voltage : 35V Forward Current, 1 us pulse : 1 A Total Device Dissipation : 250 mW Junction Temp.: -65 ... 150 grdC. Characteristics: Vbr at Ir=10 uA : min 35 V Rs at If=10mA : max 2.5 Ohm Ct at Vr=20V, f=1MHz : typ 0.33 pF, max 0.375 pF Lt at f=500...1500 MHz : typ 1 nH ______________________________________
Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!
______________________________________ ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!