U2T201 NPN Power Darlington Transistor
UNITRODE
3-pin TO66:
Bottom View: Collector = Case
/O\
/ \
/B1 E\
| |
\B2 / ( B2 = Emitter of Ts1 )
\ /
\O/
Absolute Maximum Ratings :
Vceo = 80 V
Veb2 = 6 V
Veb1 = 12 V
Ic = 4 A
Ic peak = 10 A
Ib1 = 0.5 A
Ptot at case = 100grdC.: 25 W
Thermal Resistance Junction to Case : 4 grdC./W
Characteristics at 25 grdC.:
DC Current Gain at Ic=1A, Vce=2V, RB2E=1kOhm : min 2000
at Ic=5A ( pulsed), Vce=5V, RB2E=100 Ohm : min 2000
Vce(sat) at Ic=5A, Ib1=5 mA, RB2E=100 Ohm : max 1.5 V
Collector Capacitance at Vcb=10V, Ie=0, f=1MHz : max 100 pF
Times at Vcc=30V, Ic=5A, Ib1(on)= -Ib1(off) = 5 mA ,
RB2E= 100 Ohm :
On delay : typ 100 ns
Rise : typ 300 ns
Storage : typ 600 ns
Fall: typ 500 ns
From a Safe Operating Areas Diagram:
For DC: 5A until 5V; Knee at 1.4A/20V; 0.06A/80V
For 1ms pulse: 10A until 7V, Knee at 2.2A/30V, 0.25A/80V
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ U2TA506 NPN POWER DARLINGTON UNITRODE. Integral protective diode (Anode = Emitter, Cathode = Collector)) Case TO92, Bottom View: _______ | E B C | \_____/ Absolute Maximums: Vcbo = 80V Vceo = 60V Vebo = 5V Ic = 750mA, peak = 5A, Ib = 600mA Power Dissip. at Case =25grdC: 2.4 W at Ambient=25grdC: 970mW Junction Temp. 175grdC Storage Temp. -55 to 150grdC Thermal Resistance Junction to Case: 62.5grdC/W Specifications at 25grdC: DC Current Gain at Ic=1A, Vce=5V : min 1000 at Ic=5A, Vce=5V: typ 300 AC Current Gain at Ic=1A,Vce=5V DC, f=10MHz: typ 4 Times at Ic=2A,Vcc=60V,Ib=-Ib= 4mA: Rise: typ 600ns Storage: typ 1500ns Fall: typ 800ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ UES2603 Rectifier UNITRODE TO3: UES2603 : Common Cathode connected to case, UES2603R: Common Anode connected to case Absolute Maximum Ratings : Peak Inverse Voltage : 150 V Average DC Output Current at 100 grdC.: 30 A Non Repititive sinusiodal surge Current 8.3 ms : 400 A Tj = Tstg = -55 to 175 grdC. Thermal Resistance Junction to Case : max 1 grdC./W Specifications : Forward Voltage at 15 A, pulsed 300us : at 25 grdC. : max 0.93 V at 125grdC. : max 0.825 V Reverse Current (at 150 V ?? ): at 25 grdC. : max 20 uA at 125grdC.: max 4 mA Reverse Recovery Time at If=0.5A, Ir=1A, Irec = 0.25A : max 35 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ UES601.. Rectifier UNITRODE TO3: UES601 : Cathode connected to case, Anode to both pins. UES601R : Anode connected to case, Cathode to both pins. Absolute Maximum Ratings: Peak Inverse Voltage : 50 V Max Average DC Current at 100 grdC.: 30 A Non repetitive sinusiodal surge current 8.3 ms : 800 A Top = Tstg = -55 to 175 grdC. Thermal Resistance Junction to Case : max 1 grdC./W Characteristics : Forward Voltage at 30 A, 25 grdC.: max .915 V at 125 grdC.: max 0.8 V Reverse Current at 25 grdC : max 25uA at 125 grdC.: max 10 mA ( at Vr=50 V ?? ) Reverse Recovery Time at If=0.5A,Ir=1A,Irec=0.25A : max 50 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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UF28150J Power-MOSFET
MACOM
Ich habe das Datenblatt in einem Datenbuch von 1995. Es ist leider
nicht sehr ausführlich. Zum Beispiel steht nirgends, daß da wohl
zwei FETs in einem Gehäuse sind. Auch läßt das Gehäusebild nur
Source und Drain je zweimal erscheinen, woraus man folgern müßte,
daß das Gate am Flansch liegt. Das kann aber nicht stimmen, denn
bei Features steht: Common Source Configuration.
Durch Vergleich mit anderen Typen komme ich zu folgendem Schluß:
Die äußeren, schmalen Anschlußbänder sind Source, jeweils zwei
pro Transistor. Die rechtwinkligen breiten sind Gateanschlüsse,
und die abgeschrägten breiten sind Drainanschlüsse. Das macht auch
auf einer Leiterplatte Sinn. Also:
S /D| /D| S
___||_|_|_|_|_||___
|_o_______________o_|
|| | | | | ||
|| |_| |_| ||
S G G S
Absolute Maximum Ratings:
Vds = 65V
Vgs = 20V
Ids = 16 A (per Site)
Power Diss. = 389W
Junction Temp. = 200 grdC
Storage Temp. = -65 to 150 grdC
Thermal Resistance = 0.45 grdC/W
Characteristics at 25grdC:
Gate Threshold Voltage at Vds=10V, Id=400mA : min 2V, max 6V
Forward Transconductance at Vds=10V, Ids = 4A,
Delta Vgs=1V, Pulse 80us : min 2 S (1/Ohm)
Input Capacitance at Vds=28V : max 180 pF
Output Capacity at Vds=28V : max 120 pF
Reverse Capacity at Vds = 28V : max 32 pF
Power Gain at f=500MHz, Vds=28V, Idquiet = 400mA, Pout=150W :
min 8 dB
Drain Efficiency at the same conditions : min 55%
Load Mismatch Tolerance at the same c.: VSWR-T = max 10 : 1
Interessantes aus einigen typischen Kurven:
Input- und Reverse Capacity sind fast unabhängig von Vds.
Die Output-Cap. geht von 140pF bei 5V auf 80pF bei 30V.
Power-Output ist in Abhängigkeit von Vds gezeichnet, relativ
linear bis 120W bei 20V, dann flacher bis 170W bei 35V
(alles bei Pin=24W).
Power Output in Abhängigkeit vom Input Power:
Bei 100MHz: 2,5W für 120W bis 10W für 170W.
Bei 500MHz: 2.5W für 30W, 10W für 100W, 15W für 130W,
dann flach bis 30W für 170W.
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Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!
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UFN432/ UFN433 N-Channel Power MOSFET
UNITRODE
TO3, bottom view:
S
O O Drain connected to case
G
Absolute Maximum Ratings:
Vds : UFN432: 500V, UFN433: 450 V
Vdg : UFN432: 500V, UFN433: 450 V
Id continuous at 25grdC : 4 A
at 100grdC : 2.5 A
Source-Drain Diode : 4 A
Id pulsed : : 16 A
Source-Drain Diode : 16 A
Vgs : +/- 20 V
Power Dissip. : 75 W
Derating 0.6 W/grdC
Thermal Resistance J-C : max 1.67 grdC/W
Characteristics:
Vgs threshold at Vds=Vgs and Id=250uA: 2 to 4 V
Igss forward and reverse at +/- 20V : max 100nA
Idss at Vds= 500V, Vgs=0V : max 0.25 mA
Rdson at Vgs=10V, Id=2.5A : typ 1.5 Ohm, max 2 Ohm
forward transconductance ,pulse test, Id=2.5A : min 2.5 S(1/Ohm)
Capacities at Vgs=0V, Vds=25V, f=1MHz:
Input : max 800pF
Output : max 200pF
Reverse: max 60pF
Times at 225V,Id=2.5A, Zo=15 Ohm:
t on = max 30ns
t rise = max 30ns
t off = max 55ns
t fall = max 30ns
Forward Voltage at Is=4A, pulse Test : max 1.3 V
Reverse recovery Time at If=4.5A, dIf/dt=100A/us, 150 grdC.:
typ 800 ns
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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UFN520/ UFN521 N-Channel Power MOSFET
UNITRODE.
Case T=220, Gate(left), Drain, Source.
Absolute Maximum Ratings:
Vds : UFN520: 100 V, UFN521: 60 V
Vdg : UFN520: 100 V, UFN521: 60 V
Id continuous at 25grdC : 8 A
at 100grdC : 5 A
Source- Drain Diode : 8 A
Id pulsed : 32 A
Source- Drain Diode : 32 A
Vgs : +/- 20 V
Power Dissip. : 40 W
.. Derating 0.32 W/grdC
Thermal Resistance J-C : max 3.12 grdC/W
Characteristics:
Vgs threshold at Vds=Vgs and Id=250uA: 2 to 4 V
Igss forward and reverse at +/- 20V : max 500nA
Idss at Vds= 100V, Vgs=0V : max 0.25 mA
Rdson at Vgs=10V, Id=4A : typ 0.25 Ohm, max 0.3 Ohm
forward transconductance (pulse test, Id=4A) min 1.5 S(1/Ohm)
Capacitances at Vgs=0, Vds=25V, f=1MHz :
Input : max 600pF
Output : max 400pF
Reverse: max 100pF
At 50V,Id=4A, Zo=50 Ohm:
t on = max 40ns
t rise = max 70ns
t off = max 100ns
t fall = max 70ns
Source-Drain antiparallel Diode:
Forward Voltage at Is=8A, pulse Test : max 2.5 V
Reverse recovery Time at If=8A, dIf/dt=100A/us, 150 grdC.:
typ 280 ns
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
UFN840/ UFN841 N-Channel Power MOSFET
UNITRODE
Case T=220, Gate(left), Drain, Source
Absolute Maximum Ratings:
Vds : UFN840: 500 V, UFN841: 450 V
Vdg : UFN840: 500 V, UFN841: 450 V
Id continuous at 25grdC : 8 A
at 100grdC : 5 A
Source- Drain Diode : 8 A
Id pulsed : 32 A
Source- Drain Diode : 32 A
Vgs : +/- 20 V
Power Dissipation : 125 W
.. Derating 1W/grdC
Thermal Resistance J-C : max 1 grdC/W
Characteristics:
Vgs threshold at Vds=Vgs and Id=250uA: 2 to 4 V
Igss forward and reverse at +/- 20V : max 500nA
Idss at Vds= 400V, Vgs=0V : max 1mA
Rdson at Vgs=10V, Id=4A : typ 0,1Ohm, max 1 Ohm
forward transconductance ,pulse test, Id=4A: min 4 S(1/Ohm)
Capacitances at Vgs=0, Vds=25V, f=1MHz:
Input : 1600pF
Output : 350pF
Reverse: max 150pF
Times at 200V, Id=4A, Zo=4.7Ohm:
t on = max 35ns
t rise = max 15ns
t off = max 90ns
t fall = max 30ns
Source-Drain antiparallel Diode:
Forward Voltage at Is=8A, pulse Test : max 2V
Reverse recovery Time at If=8A, dIf/dt=100A/us, 150 grdC.:
typ 1100 ns
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!