VN 0109.. N-Channel Enhancement DMOS Power FET
SUPERTEX
VN0109N2 TO39
N3 TO92
N5 TO220
N9 TO52 (~TO18)
Absolute Maximum Ratings:
Vdss = 90 V
Vdgs = 90 V
Vgs = +/- 20 V
Id : VN0109N2 TO39 : 800mA
N3 TO92 : 500mA
N5 TO220 :1500mA
N9 TO52 : 500mA
Id pulsed : N2 TO39 : 2.5 A
N3 TO92 : 2 A
N5 TO220 : 2.5 A
N9 TO52 : 2 A
Pd at Tc=25grdC.:
VN0109N2 TO39 : 3.5 W
N3 TO92 : 1 W
N5 TO220 : 15 W
N9 TO52 : 1 W
Operating and storage temp.: -55 to 150 grdC.
Thermal Resistance Junction to Case :
VN0109N2 TO39 : 35
N3 TO92 :125
N5 TO220 : 8
N9 TO52 :125 grdC./W
Characteristics at 25 grdC.:
Gate Threshold Voltage at Vds=Vgs, Id = 1 mA :
min 0.8 V, max 2.4 V
Idss at Vgs=0, Vds=90V: max 1 uA
at Vds=0.8 x Vdsmax, Vgs=0, 125 grdC.: max 100 uA
Id(on) at Vds=25V, Vgs=5V : min 0.5A, typ 1 A
at Vds=25V, Vgs=10V : min 2 A, typ 2.5 A
Rds(on) at Vgs=5V, Id=250mA : typ 3 Ohm, max 5 Ohm
at Vgs=10V, Id=1A : typ 2.5 Ohm, max 3 Ohm
Forward Transconductance at Vds=25V, Id=500mA :
min 300 mS, typ 450 mS
Capacitances at Vgs=0, Vds=25V, f=1MHz :
Input : max 65 pF
Output: max 25 pF
Reverse : max 8 pF
Times at Vdd=25V, Id=1A, Rs=50 Ohm :
Turn On Delay : max 5 ns
Rise : max 8 ns
Turn Off Delay : max 9 ns
Fall : max 8 ns
Diode Forward Voltage Drop at Isd=1A : typ 1.2V, max 1.8V
Reverse Recovery Time at Isd=1A : typ 400 ns
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ VN0116N5 N-Channel Enhancement DMOS Power FET SUPERTEX TO220 case Absolute Maximum Ratings: Vdss = 160 V Vdgs = 160 V Vgs = +/- 20 V Id = 700 mA Id pulsed = 1.2 A Pd at Tc=25grdC.: 15 W Operating and storage temp.: -55 to 150 grdC. Thermal Resistance Junction to Case : 8.3 grdC./W Characteristics at 25 grdC.: Gate Threshold Voltage at Vds=Vgs, Id = 1 mA : min 1 V, max 3 V Idss at Vgs=0, Vds=160V: max 10 uA at Vds=0.8 x Vdsmax, Vgs=0, 125 grdC.: max 1 mA Id(on) at Vds=25V, Vgs=5V : min 0.3A, typ 0.5 A at Vds=25V, Vgs=10V : min 0.4A, typ 0.8 A Rds(on) at Vgs=5V, Id=100mA : typ 10 Ohm, max 15 Ohm at Vgs=10V, Id=100mA : typ 8 Ohm, max 10 Ohm Forward Transconductance at Vds=25V, Id=250mA : min 100 mS, typ 150 mS Capacitances at Vgs=0, Vds=25V, f=1MHz : Input : max 55 pF Output: max 30 pF Reverse : max 8 pF Times at Vdd=25V, Id=250mA, Rs=50 Ohm : Turn On Delay : max 5 ns Rise : max 8 ns Turn Off Delay : max 9 ns Fall : max 8 ns Diode Forward Voltage Drop at Isd=2.5A : typ 1.2V, max 1.8V Reverse Recovery Time at Isd=1A : typ 400 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ VN0350N5 N-Channel Enhancement Mode Vertical DMOS FET SUPERTEX TO220 case Absolute Maximum Ratings: Drain Source Breakdown Voltage at Vgs=0, Id=10mA : 500 V Drain Gate Voltage : 500 V Gate Source Voltage : +/- 20 V Id continuous max 1.5 A Id pulsed max 5 A Power Dissipation at Tc=25 grdC.: 50 W Operating and Storage Temp.: -55 to 150 grdC. Thermal Resistance Junction to Case : 2.5 grdC./W Characteristics: Gate Threeshold Voltage at Id=10mA : min 2 V, max 4 V Idss at 25 grdC.:max 100uA, at 125 grdC.: max 2 mA Id ON-state at Vgs=5V, Vds=25V : typ 2.6 A at Vgs=10V : min 2 A, typ 6.5 A Rds ON-state at Vgs=10V, Id=0.5A : typ 2.8 Ohm, max 4 Ohm Forward Transconductance at Vds=25V, Id = 0.5 A : min 500 mS, typ 1000 mS Capacitances at Vgs=0, Vds=25V, f=1MHz : Input : typ 550 pF, max 650 pF Output: typ 90 pF, max 125 pF Reverse:typ 15 pF, max 50 pF Times at Vdd=25V, Id=1A, Rgen=10 Ohm : Turn On Delay: typ 8, max 15 ns Rise : typ 8, max 15 ns Turn Off Delay: typ 65, max 100 ns Fall : typ 15, max 25 ns Vsd, Diode Forward Voltage Drop at Isd=1A : typ 1.3, max 1.8 V Reverse Recovery Time at Isd=0.5 A : typ 450 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ VN6035 N-Channel Enhancement DMOS Power FET SUPERTEX I don't find any pin configuration in the datasheet, perhaps it is as for other TO92 Devices: (bottom view) _______ | S G D | \_____/ Absolute Maximum Ratings: Vdss = 600 V Vdgs = 600 V Vgs = +/- 40 V ! ! ! Id = 110 mA Id pulsed = 500 mA Pd at Tc=25grdC.: 1 W Operating and storage temp.: -55 to 150 grdC. Thermal Resistance Junction to Case : 170 grdC./W Characteristics at 25 grdC.: Gate Threshold Voltage at Vds=Vgs, Id = 1 mA : min 0.8 V, max 2.8 V Idss at Vgs=0, Vds=600V: max 50 uA at Vds=0.8 x Vdsmax, Vgs=0, 125 grdC.: max 200 uA Vds(on) at Vgs=10V, Id=50 mA : max 1.75 V Rds(on) at Vgs=10V, Id=50mA : max 35 Ohm at Vgs=10V, Id=100mA : typ 8 Ohm, max 10 Ohm Forward Transconductance at Vds=25V, Id=50mA : min 100 mS Capacitances at Vgs=0, Vds=25V, f=1MHz : Input : max 80 pF Output: max 20 pF Reverse : max 10 pF Times at Vdd=25V, Id=50mA, Rs=50 Ohm : Turn On Delay : max 20 ns Turn Off Delay : max 100 ns Diode Forward Voltage Drop at Isd=110mA: Vsd = max 1.2V Reverse Recovery Time : -?- ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
VN30.., VN33.., VN35.., VN40.., VN46.., VN66.., VN67..,
VN88.., VN89.., VN90.., VN98.., VN99..
N- Channel Enhancement MOSFETs
from SILICONIC databooks 1981,1989 and 1991, and some
datasheets 1979 and 1985(?).
from INTERSIL datasheets 1980 and without date.
This big family was a little bit unclear since the beginning.
And as for the long time produced types, it was nearly
impossible to keep surveing. There are two causes for the chaos:
Attention: The same typenumber was used for MOSFETS having the
Gate with and without protection diodes ! !
Types ..AA, ..AB, ..AF : INTERSIL with protection zener diode,
SILICONIX without protection.
If the negative swing of Vgs is important, INTERSIL has
the types ..AJ to replace ..AA, and ..AK to replace ..AB.
Attention: The same typenumber was used for MOSFETs having
different ratings and specifications in the datasheets of
different editions. Not a problem if the new datas are improved.
But I find some reduced datas in the new datasheets. Please note
the excepions!
Remarks: I see this trouble as the aspect of the datasheets only.
I think the practice was without problems, if I consider the
success of this family.
Survey : Types vs. Manufacturer:
I = INTERSIL ; 19xx = Year of the first SILICONIX- datasheet
suffix: ..AA ..AB ..AD ..AF ..AFD ..AJ ..AK
case: TO3 TO39 TO220 TO202 TO3 TO39
type
VN30 1981+I 1981+I
VN33 1979
VN35 1981+I 1981+I I I
VN40 1981 1981+I 1989
VN46 1981 1981+I 1989
VN66 1981 1985 1981+I 1989 I
VN67 1981+I 1981+I 1985 1981+I I I
VN88 1981 1981+I 1989
VN89 1981+I I 1981+I
VN90 1981+I 1981+I
VN98 1981+I I I
VN99 1981 1981 I I
Cases and Pinning
VNxxAA, VNxxAJ : TO 3, bottom view:
o
G S case=Drain
o
VNxxAB, VNxxAK : TO39: bottom view, clockwise:
Nose, Source, Gate, Drain(=case ?)
VNxxAD : TO 220, bottom view
_________
| |
| G D S | D = Tab
||_________||
VNxxAF : TO 202, bottom view
_________
| \
| S G D | D = Tab
|_________|
VNxxAFD : TO 220, bottom view
_________
| |
| S G D | D = Tab
||_________||
Attention: NOT the standard pinning for TO220- Power MOSFETs!
Absolute Maximum Ratings at 25 grdC.:
Vds : VN30/33/35: 35 V,
VN40/46: 40 V,
VN66/67: 60 V,
VN88,89: 80 V,
VN90/98/99: 90 V
Vgs: SILICONIX, all types: +/- 30 V
(all types WITHOUT Gate- Source Zener Protection)
Exception ..AD 1985 only: +/- 40 V, perhaps a mistake
INTERSIL ..AJ, ..AK : +/- 30 V
(types WITHOUT Gate- Source Zener Protection)
..AA, ..AB, ..AF : max +15 V / -0.3 V
(types WITH Gate- Source Zener Protection)
Id : SILICONIX 1981: all types : 2 A
1985: ..AF- types: 1.7 A (at 100 grdC.: 1 A )
1989: VN40AFD : 1.14 A(at 100 grdC.: 0.72 A )
VN66AD : 1.7 A (at 100 grdC.: 1 A )
VN46/66AFD : 1.46 A(at 100 grdC.: 0.92 A )
VN67AD : 1.58 A(at 100 grdC.: 1 A )
VN88AD : 1.49 A(at 100 grdC.: 0.94 A )
VN88AFD : 1.29 A(at 100 grdC.: 0.81 A )
INTERSIL ..AA , ..AJ : 2.4 A
..AB , ..AK : 1.2 A
..AF : 1.7 A
Id pulsed : 3 A - I'm enjoid, one simpe value for all...
Pd :..AA ( TO3 ) : 25 W
..AB ( TO39 )1981 : 6.25 W
VN67/90AB 1989 : 5 W !!
..AD ( TO220 ) : 20 W
..AF ( TO202 ) : 15 W
..AFD( TO220 ) : 15 W
..AJ ( TO3 ) : 25 W
..AK INTERSIL : 6.25 W
VN33AK SILICONIX: 8.33 W
Tj = Tstg : -55 to 150 grdC.
Thermal Resistance Junction to Case :
..AB (1989): 25 K/W
..AD : 6.25 K/W
..AF, ..AFD: 8.3 K/W
..AK : 15 K/W
others: ?
Specifications at 25 grdC.:
Gate Threshold Volt.(Vds=Vgs,Id=1mA): min 0.8 V, typ 1.2 V,
( max 2.5 V, new datasheets only)
Exceptions:
VN33 : min 0.8 V, max 2 V
VN46, VN66, VN88 : min 0.8 V, typ 1.7 V
Idss at Vds= max, Vgs=0, 25 grdC.: max 10 uA
at Vds=0.8max, Vgs=0, 125 grdC.: max 100 uA (1981)
max 500 uA (1989, 1991)
Id(on) at Vds=10V, Vgs=10V :
1981 all types : typ 2 A
1989 VN40, VN46.. : min 1 A, typ 1.8 A
VN66, VN67, VN88.. : min 1.5 A, typ 1.8 A
Rds(on) at Vgs=10V, Id=1A :
VN30: max 5 Ohm VN35: max 2.5 Ohm
VN40: max 5 Ohm VN46: max 3 Ohm
VN66: max 3 Ohm VN67: max 3.5 Ohm
VN88: max 4 Ohm VN89: max 4.5 Ohm
VN90: max 5 Ohm VN98: max 4 Ohm
VN99: max 4.5 Ohm
Forward Transconductance at Vds=25V, Id=0.5A (pulsed):
min 150 mS, typ 250 ms (1989: typ 350 mS)
Capacitances at Vds=25V, Vgs=0, f=1MHz:
Input : typ 35 pF, max 50 pF
Reverse Transfer : typ 5 pF, max 10 pF
Output : max 50 pF
Exceptions: VN33AK : max 45 pF
VN66/67/88AD +AFD : max 40 pF
VN90AB (1989 only) : max 40 pF
VN40/46AFD :typ 25 pF, max 65 pF
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ VP0116N5 P-Channel Enhancement Mode Vertical DMOS FET SUPERTEX TO220 ( without '-' signs ) Absolute Maximum Ratings: Drain Source Breakdown Voltage at Vgs=0, Id=10mA : 160 V Drain Gate Voltage : 160 V Gate Source Voltage : +/- 20 V Id continuous max 425 mA Id pulsed max 1 A Power Dissipation at Tc=25 grdC.: 15 W Operating and Storage Temp.: -55 to 150 grdC. Thermal Resistance Junction to Case : 8.3 grdC./W Characteristics: Gate Threshold Voltage at Id=1mA : min 1.5 V, max 3.5 V Idss at 25 grdC.:max 10uA, at 125 grdC.: max 1 mA Id ON-state at Vgs=5V, Vds=25V : min 100 mA, typ 400 mA at Vgs=10V : min 350 mA, typ 700 mA Rds ON-state at Vgs=10V, Id=100 mA : typ 15 Ohm, max 25 Ohm Forward Transconductance at Vds=25V, Id = 100 mA : min 50 mS, typ 70 mS Capacitances at Vgs=0, Vds=25V, f=1MHz : Input : typ 50 pF, max 60 pF Output: typ 10 pF, max 30 pF Reverse:typ 5 pF, max 10 pF Times at Vdd=25V, Id=100 mA, Rs=50 Ohm : Turn On Delay: typ 4, max 10 ns Rise : typ 4 , max 10 ns Turn Off Delay: typ 4, max 10 ns Fall : typ 4 , max 10 ns Vsd Diode Forward Voltage Drop at Vgs=0, Isd=0.5 A : typ 1 V Reverse Recovery Time at Vgs=0, Isd=0.5 A : typ 500 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ VP0350N5 P-Channel Enhancement Mode Vertical DMOS FET SUPERTEX TO220 ( without '-' sign.) Absolute Maximum Ratings: Drain Source Breakdown Voltage at Vgs=0, Id=10mA : 500 V Drain Gate Voltage : 500 V Gate Source Voltage : +/- 20 V Id continuous max 1 A Id pulsed max 3 A Power Dissipation at Tc=25 grdC.: 50 W Operating and Storage Temp.: -55 to 150 grdC. Thermal Resistance Junction to Case : 2.5 grdC./W Characteristics: Gate Threeshold Voltage at Id=10mA : min 2.5 V, max 4.5 V Idss at 25 grdC.:max 200uA, at 125 grdC.: max 2 mA Id ON-state at Vgs=5V, Vds=25V : typ 1.5 A at Vgs=10V : min 1 A, typ 3 A Rds ON-state at Vgs=10V, Id=0.25 A : typ 5.5 Ohm, max 7.5 Ohm Forward Transconductance at Vds=25V, Id = 0.5 A : min 250 mS, typ 450 mS Capacitances at Vgs=0, Vds=25V, f=1MHz : Input : typ 720 pF, max 800 pF Output: typ 110 pF, max 130 pF Reverse:typ 20 pF, max 50 pF Times at Vdd=25V, Id=1A, Rgen=10 Ohm : Turn On Delay: typ 11, max 30 ns Rise : typ 11 , max 30 ns Turn Off Delay: typ 70, max 100 ns Fall : typ 22 , max 30 ns Vsd Diode Forward Voltage Drop at Vgs=0, Isd=0.25 A : typ 1 V, max 1.3 V Reverse Recovery Time at Vgs=0, Isd=0.25 A : typ 550 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ VP1210N5 P- Channel Enhancement Mode Vertical DMOS FET SUPERTEX TO220 case: Absolute Maximum Ratings: Vdss = -100 V Vdgs = -100 V Vgs = +/- 20 V Id = -5 A Id pulsed = -14 A Source Drain Diode: Idr max = -5 A, pulsed : -14 A Pd at Tc=25grdC.: 45 W Operating and storage temp.: -55 to 150 grdC. Thermal Resistance Junction to Case : 2.75 grdC./W Characteristics at 25 grdC.: Gate Threshold Voltage at Vds=Vgs, Id = -10 mA : min -1.5 V, max -3.5 V Idss at Vgs=0, Vds=-100V: max -100 uA at Vds=-80, Vgs=0, 125 grdC.: max -10 mA Id(on) at Vds=-25V, Vgs=-5V : min -1.5A, typ -3 A at Vds=-25V, Vgs=-10V : min -6 A, typ -14 A Rds(on) at Vgs=-5V, Id=-1A : typ 1 Ohm, max 1.4 Ohm at Vgs=-10V, Id=-3A : typ 0.5 Ohm, max 0.8 Ohm Forward Transconductance at Vds=-25V, Id=-3A : min 1 S, typ 2 S Capacitances at Vgs=0, Vds=-25V, f=1MHz : Input : max 650 pF Output: max 350 pF Reverse : max 65 pF Times at Vdd=-25V, Id=-4A, Rgen=10 Ohm : Turn On Delay : max 30 ns Rise : max 40 ns Turn Off Delay : max 105 ns Fall : max 60 ns Vsd , Diode Forward Voltage Drop at Isd=-5A, Vgs=0 : typ -1.2V, max -1.6V Reverse Recovery Time at Isd=-1A : typ 500 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ ______________________________________
Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!