Semiconductor- Types V... (without ICs)

VN 0109..  N-Channel Enhancement DMOS Power FET 
  SUPERTEX

VN0109N2 TO39
      N3 TO92
      N5 TO220
      N9 TO52 (~TO18)

Absolute Maximum Ratings:
Vdss = 90 V
Vdgs = 90 V
Vgs = +/- 20 V
Id :  VN0109N2 TO39  : 800mA
            N3 TO92  : 500mA
            N5 TO220 :1500mA
            N9 TO52  : 500mA
Id pulsed : N2 TO39  : 2.5 A
            N3 TO92  : 2 A
            N5 TO220 : 2.5 A
            N9 TO52  : 2 A
Pd at Tc=25grdC.:
      VN0109N2 TO39  : 3.5 W
            N3 TO92  : 1 W
            N5 TO220 : 15 W
            N9 TO52  : 1 W
Operating and storage temp.: -55 to 150 grdC.

Thermal Resistance Junction to Case : 
      VN0109N2 TO39  : 35
            N3 TO92  :125
            N5 TO220 :  8
            N9 TO52  :125  grdC./W

Characteristics at 25 grdC.:
Gate Threshold Voltage at Vds=Vgs, Id = 1 mA : 
   min 0.8 V, max 2.4 V
Idss at Vgs=0, Vds=90V: max 1 uA
   at Vds=0.8 x Vdsmax, Vgs=0, 125 grdC.: max 100 uA
Id(on) at Vds=25V, Vgs=5V : min 0.5A, typ 1 A
  at Vds=25V, Vgs=10V : min 2 A, typ 2.5 A
Rds(on) at Vgs=5V, Id=250mA : typ 3 Ohm, max 5 Ohm
  at Vgs=10V, Id=1A : typ 2.5 Ohm, max 3 Ohm
Forward Transconductance at Vds=25V, Id=500mA :  
  min 300 mS, typ 450 mS
Capacitances at Vgs=0, Vds=25V, f=1MHz :
  Input : max 65 pF
  Output: max 25 pF
  Reverse : max 8 pF
Times at Vdd=25V, Id=1A, Rs=50 Ohm :
  Turn On Delay : max 5 ns
  Rise : max 8 ns
  Turn Off Delay : max 9 ns
  Fall : max 8 ns

Diode Forward Voltage Drop at Isd=1A : typ 1.2V, max 1.8V
Reverse Recovery Time at Isd=1A : typ 400 ns
______________________________________

Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!

______________________________________


VN0116N5  N-Channel Enhancement DMOS Power FET 
  SUPERTEX

TO220 case

Absolute Maximum Ratings:
Vdss = 160 V
Vdgs = 160 V
Vgs = +/- 20 V
Id = 700 mA
Id pulsed = 1.2 A
Pd at Tc=25grdC.: 15 W
Operating and storage temp.: -55 to 150 grdC.

Thermal Resistance Junction to Case : 8.3 grdC./W

Characteristics at 25 grdC.:
Gate Threshold Voltage at Vds=Vgs, Id = 1 mA : 
  min 1 V, max 3 V
Idss at Vgs=0, Vds=160V: max 10 uA
  at Vds=0.8 x Vdsmax, Vgs=0, 125 grdC.: max 1 mA
Id(on) at Vds=25V, Vgs=5V : min 0.3A, typ 0.5 A
  at Vds=25V, Vgs=10V : min 0.4A, typ 0.8 A
Rds(on) at Vgs=5V, Id=100mA : typ 10 Ohm, max 15 Ohm
  at Vgs=10V, Id=100mA : typ 8 Ohm, max 10 Ohm
Forward Transconductance at Vds=25V, Id=250mA : 
  min 100 mS, typ 150 mS
Capacitances at Vgs=0, Vds=25V, f=1MHz :
  Input : max 55 pF
  Output: max 30 pF
  Reverse : max 8 pF
Times at Vdd=25V, Id=250mA, Rs=50 Ohm :
  Turn On Delay : max 5 ns
  Rise : max 8 ns
  Turn Off Delay : max 9 ns
  Fall : max 8 ns

Diode Forward Voltage Drop at Isd=2.5A : typ 1.2V, max 1.8V
Reverse Recovery Time at Isd=1A : typ 400 ns
______________________________________

Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!

______________________________________


VN0350N5   N-Channel Enhancement Mode Vertical DMOS FET
  SUPERTEX

TO220 case

Absolute Maximum Ratings:
Drain Source Breakdown Voltage at Vgs=0, Id=10mA : 500 V
Drain Gate Voltage : 500 V
Gate Source Voltage : +/- 20 V
Id continuous max 1.5 A
Id pulsed max 5 A
Power Dissipation at Tc=25 grdC.: 50 W
Operating and Storage Temp.: -55 to 150 grdC.

Thermal Resistance Junction to Case : 2.5 grdC./W

Characteristics:
Gate Threeshold Voltage at Id=10mA : min 2 V, max 4 V
Idss at 25 grdC.:max 100uA, at 125 grdC.: max 2 mA
Id ON-state at Vgs=5V, Vds=25V : typ 2.6 A
  at Vgs=10V : min 2 A, typ 6.5 A
Rds ON-state at Vgs=10V, Id=0.5A : typ 2.8 Ohm, max 4 Ohm
Forward Transconductance at Vds=25V, Id = 0.5 A : 
  min 500 mS, typ 1000 mS
Capacitances at Vgs=0, Vds=25V, f=1MHz :
   Input : typ 550 pF, max 650 pF
   Output: typ  90 pF, max 125 pF
   Reverse:typ  15 pF, max  50 pF
Times at Vdd=25V, Id=1A, Rgen=10 Ohm :
   Turn On Delay: typ 8, max 15 ns
   Rise : typ 8, max 15 ns
   Turn Off Delay: typ 65, max 100 ns
   Fall : typ 15, max 25 ns
Vsd, Diode Forward Voltage Drop at Isd=1A : typ 1.3, max 1.8 V
Reverse Recovery Time at Isd=0.5 A : typ 450 ns
______________________________________

Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!

______________________________________


VN6035  N-Channel Enhancement DMOS Power FET
  SUPERTEX

I don't find any pin configuration in the datasheet, perhaps it 
is as for other TO92 Devices: (bottom view)
 _______
| S G D |
 \_____/

Absolute Maximum Ratings:
Vdss = 600 V
Vdgs = 600 V
Vgs = +/- 40 V  ! ! !
Id = 110 mA
Id pulsed = 500 mA
Pd at Tc=25grdC.: 1 W
Operating and storage temp.: -55 to 150 grdC.

Thermal Resistance Junction to Case : 170 grdC./W

Characteristics at 25 grdC.:
Gate Threshold Voltage at Vds=Vgs, Id = 1 mA : 
  min 0.8 V, max 2.8 V
Idss at Vgs=0, Vds=600V: max 50 uA
  at Vds=0.8 x Vdsmax, Vgs=0, 125 grdC.: max 200 uA
Vds(on) at Vgs=10V, Id=50 mA : max 1.75 V
Rds(on) at Vgs=10V, Id=50mA :  max 35 Ohm
  at Vgs=10V, Id=100mA : typ 8 Ohm, max 10 Ohm
Forward Transconductance at Vds=25V, Id=50mA : min 100 mS
Capacitances at Vgs=0, Vds=25V, f=1MHz :
  Input : max 80 pF
  Output: max 20 pF
  Reverse : max 10 pF
Times at Vdd=25V, Id=50mA, Rs=50 Ohm :
  Turn On Delay : max 20 ns
  Turn Off Delay : max 100 ns

Diode Forward Voltage Drop at Isd=110mA: Vsd = max 1.2V
Reverse Recovery Time  : -?-
______________________________________

Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!

______________________________________

VN30.., VN33.., VN35.., VN40.., VN46.., VN66.., VN67..,
VN88.., VN89.., VN90.., VN98.., VN99..
N- Channel Enhancement MOSFETs

from SILICONIC databooks 1981,1989 and 1991, and some
        datasheets 1979 and 1985(?).
from INTERSIL datasheets 1980 and without date.

This big family was a little bit unclear since the beginning. 
And as for the long time produced types, it was nearly 
impossible to keep surveing. There are two causes for the chaos:

Attention: The same typenumber was used for MOSFETS having the 
   Gate with and without protection diodes ! !
   Types ..AA, ..AB, ..AF : INTERSIL with protection zener diode,
                            SILICONIX without protection.
   If the negative swing of Vgs is important, INTERSIL has
   the types ..AJ to replace ..AA, and ..AK to replace ..AB.

Attention: The same typenumber was used for MOSFETs having 
   different ratings and specifications in the datasheets of 
   different editions. Not a problem if the new datas are improved.
   But I find some reduced datas in the new datasheets. Please note
   the excepions!

Remarks: I see this trouble as the aspect of the datasheets only.
   I think the practice was without problems, if I consider the
   success of this family.


Survey : Types vs. Manufacturer:
   I = INTERSIL ; 19xx = Year of the first SILICONIX- datasheet 

 suffix: ..AA    ..AB    ..AD   ..AF    ..AFD  ..AJ  ..AK
   case: TO3     TO39    TO220  TO202          TO3   TO39
type
VN30     1981+I  1981+I
VN33                                                 1979
VN35     1981+I  1981+I                        I     I
VN40     1981                   1981+I  1989
VN46     1981                   1981+I  1989
VN66     1981            1985   1981+I  1989         I
VN67     1981+I  1981+I  1985   1981+I         I     I
VN88     1981                   1981+I  1989
VN89     1981+I  I              1981+I
VN90     1981+I  1981+I
VN98                            1981+I         I     I
VN99     1981    1981                          I     I


Cases and Pinning

VNxxAA, VNxxAJ : TO 3, bottom view:
    o
   G S   case=Drain

    o

VNxxAB, VNxxAK : TO39: bottom view, clockwise:
   Nose, Source, Gate, Drain(=case ?)

VNxxAD : TO 220, bottom view
   _________
  |         |
  | G  D  S |   D = Tab
 ||_________||

VNxxAF : TO 202, bottom view
  _________
 |         \
 | S  G  D |   D = Tab
 |_________|

VNxxAFD : TO 220, bottom view
   _________
  |         |
  | S  G  D |   D = Tab
 ||_________||

Attention: NOT the standard pinning for TO220- Power MOSFETs!


Absolute Maximum Ratings at 25 grdC.:

Vds : VN30/33/35: 35 V,   
      VN40/46:    40 V,   
      VN66/67:    60 V,
      VN88,89:    80 V,   
      VN90/98/99: 90 V

Vgs: SILICONIX, all types: +/- 30 V
          (all types WITHOUT Gate- Source Zener Protection)
          Exception ..AD 1985 only: +/- 40 V, perhaps a mistake
     INTERSIL ..AJ, ..AK : +/- 30 V
          (types WITHOUT Gate- Source Zener Protection)
               ..AA, ..AB, ..AF :  max +15 V / -0.3 V 
          (types WITH Gate- Source Zener Protection)

Id : SILICONIX 1981: all types  : 2 A
               1985: ..AF- types: 1.7 A (at 100 grdC.: 1 A )
               1989: VN40AFD    : 1.14 A(at 100 grdC.: 0.72 A )
                     VN66AD     : 1.7 A (at 100 grdC.: 1 A )
                     VN46/66AFD : 1.46 A(at 100 grdC.: 0.92 A )
                     VN67AD     : 1.58 A(at 100 grdC.: 1 A )
                     VN88AD     : 1.49 A(at 100 grdC.: 0.94 A )
                     VN88AFD    : 1.29 A(at 100 grdC.: 0.81 A )
     INTERSIL ..AA , ..AJ :       2.4 A
              ..AB , ..AK :       1.2 A
              ..AF        :       1.7 A

Id pulsed : 3 A   - I'm enjoid, one simpe value for all...

Pd :..AA ( TO3 )      : 25 W
    ..AB ( TO39 )1981 :  6.25 W
       VN67/90AB 1989 :  5 W !!
    ..AD ( TO220 )    : 20 W
    ..AF ( TO202 )    : 15 W
    ..AFD( TO220 )    : 15 W
    ..AJ ( TO3 )      : 25 W
    ..AK  INTERSIL    :  6.25 W
      VN33AK SILICONIX:  8.33 W
Tj = Tstg : -55 to 150 grdC.

Thermal Resistance Junction to Case :
   ..AB (1989): 25 K/W
   ..AD       : 6.25 K/W
   ..AF, ..AFD: 8.3 K/W
   ..AK       : 15 K/W
   others: ?

Specifications at 25 grdC.:

Gate Threshold Volt.(Vds=Vgs,Id=1mA): min 0.8 V, typ 1.2 V,
                          ( max 2.5 V, new datasheets only)
   Exceptions:
   VN33 :             min 0.8 V, max 2 V
   VN46, VN66, VN88 : min 0.8 V, typ 1.7 V
 
Idss at Vds= max, Vgs=0,  25 grdC.: max  10 uA
   at Vds=0.8max, Vgs=0, 125 grdC.: max 100 uA (1981)
                                    max 500 uA (1989, 1991)
Id(on) at Vds=10V, Vgs=10V : 
   1981  all types          :            typ 2 A
   1989  VN40, VN46..       : min 1 A,   typ 1.8 A
         VN66, VN67, VN88.. : min 1.5 A, typ 1.8 A

Rds(on) at Vgs=10V, Id=1A :
   VN30: max 5 Ohm     VN35: max 2.5 Ohm
   VN40: max 5 Ohm     VN46: max 3 Ohm
   VN66: max 3 Ohm     VN67: max 3.5 Ohm
   VN88: max 4 Ohm     VN89: max 4.5 Ohm
   VN90: max 5 Ohm     VN98: max 4 Ohm
   VN99: max 4.5 Ohm

Forward Transconductance at Vds=25V, Id=0.5A (pulsed):
   min 150 mS, typ 250 ms (1989: typ 350 mS)

Capacitances at Vds=25V, Vgs=0, f=1MHz:
   Input            : typ 35 pF, max 50 pF
   Reverse Transfer : typ  5 pF, max 10 pF
   Output           :            max 50 pF
      Exceptions:  VN33AK      : max 45 pF
          VN66/67/88AD +AFD    : max 40 pF
          VN90AB (1989 only)   : max 40 pF
          VN40/46AFD :typ 25 pF, max 65 pF

______________________________________

Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!

______________________________________
 

VP0116N5  P-Channel Enhancement Mode Vertical DMOS FET
  SUPERTEX
TO220

( without '-' signs ) 

Absolute Maximum Ratings:
Drain Source Breakdown Voltage at Vgs=0, Id=10mA : 160 V 
Drain Gate Voltage : 160 V 
Gate Source Voltage : +/- 20 V
Id continuous max 425 mA
Id pulsed max 1 A
Power Dissipation at Tc=25 grdC.: 15 W
Operating and Storage Temp.: -55 to 150 grdC.

Thermal Resistance Junction to Case : 8.3 grdC./W

Characteristics:
Gate Threshold Voltage at Id=1mA : min 1.5 V, max 3.5 V
Idss at 25 grdC.:max 10uA, at 125 grdC.: max 1 mA
Id ON-state at Vgs=5V, Vds=25V : min 100 mA, typ 400 mA
  at Vgs=10V : min 350 mA, typ 700 mA
Rds ON-state at Vgs=10V, Id=100 mA : typ 15 Ohm, max 25 Ohm
Forward Transconductance at Vds=25V, Id = 100 mA : 
   min 50 mS, typ 70 mS
Capacitances at Vgs=0, Vds=25V, f=1MHz :
   Input : typ 50 pF, max 60 pF
   Output: typ 10 pF, max 30 pF
   Reverse:typ  5 pF, max 10 pF
Times at Vdd=25V, Id=100 mA, Rs=50 Ohm :
   Turn On Delay: typ 4, max 10 ns
   Rise : typ 4 , max 10 ns
   Turn Off Delay: typ 4, max 10 ns
   Fall : typ 4 , max 10 ns
Vsd Diode Forward Voltage Drop at Vgs=0, Isd=0.5 A : typ 1 V
Reverse Recovery Time at Vgs=0, Isd=0.5 A : typ 500 ns
______________________________________

Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!

______________________________________
 
 
VP0350N5  P-Channel Enhancement Mode Vertical DMOS FET
  SUPERTEX
TO220

( without '-' sign.)

Absolute Maximum Ratings:
Drain Source Breakdown Voltage at Vgs=0, Id=10mA : 500 V
Drain Gate Voltage : 500 V
Gate Source Voltage : +/- 20 V
Id continuous max 1 A
Id pulsed max 3 A
Power Dissipation at Tc=25 grdC.: 50 W
Operating and Storage Temp.: -55 to 150 grdC.

Thermal Resistance Junction to Case : 2.5 grdC./W

Characteristics:
Gate Threeshold Voltage at Id=10mA : min 2.5 V, max 4.5 V
Idss at 25 grdC.:max 200uA, at 125 grdC.: max 2 mA
Id ON-state at Vgs=5V, Vds=25V : typ 1.5 A
  at Vgs=10V : min 1 A, typ 3 A
Rds ON-state at Vgs=10V, Id=0.25 A : typ 5.5 Ohm, max 7.5 Ohm
Forward Transconductance at Vds=25V, Id = 0.5 A : 
  min 250 mS, typ 450 mS
Capacitances at Vgs=0, Vds=25V, f=1MHz :
   Input : typ 720 pF, max 800 pF
   Output: typ 110 pF, max 130 pF
   Reverse:typ  20 pF, max  50 pF
Times at Vdd=25V, Id=1A, Rgen=10 Ohm :
   Turn On Delay: typ 11, max 30 ns
   Rise : typ 11 , max 30 ns
   Turn Off Delay: typ 70, max 100 ns
   Fall : typ 22 , max 30 ns
Vsd Diode Forward Voltage Drop at Vgs=0, Isd=0.25 A : 
   typ 1 V, max 1.3 V
Reverse Recovery Time at Vgs=0, Isd=0.25 A : typ 550 ns
______________________________________

Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!

______________________________________
 
 
VP1210N5  P- Channel Enhancement Mode Vertical DMOS FET 
  SUPERTEX
TO220 case:

Absolute Maximum Ratings:
Vdss = -100 V
Vdgs = -100 V
Vgs = +/- 20 V
Id = -5 A
Id pulsed = -14 A
Source Drain Diode: Idr max = -5 A, pulsed : -14 A
Pd at Tc=25grdC.: 45 W
Operating and storage temp.: -55 to 150 grdC.

Thermal Resistance Junction to Case : 2.75 grdC./W

Characteristics at 25 grdC.:
Gate Threshold Voltage at Vds=Vgs, Id = -10 mA : 
  min -1.5 V, max -3.5 V
Idss at Vgs=0, Vds=-100V: max -100 uA
  at Vds=-80, Vgs=0, 125 grdC.: max -10 mA
Id(on) at Vds=-25V, Vgs=-5V : min -1.5A, typ -3 A
  at Vds=-25V, Vgs=-10V : min -6 A, typ -14 A
Rds(on) at Vgs=-5V, Id=-1A : typ 1 Ohm, max 1.4 Ohm
  at Vgs=-10V, Id=-3A : typ 0.5 Ohm, max 0.8 Ohm
Forward Transconductance at Vds=-25V, Id=-3A : min 1 S, typ 2 S
Capacitances at Vgs=0, Vds=-25V, f=1MHz :
  Input : max 650 pF
  Output: max 350 pF
  Reverse : max 65 pF
Times at Vdd=-25V, Id=-4A, Rgen=10 Ohm :
  Turn On Delay : max 30 ns
  Rise : max 40 ns
  Turn Off Delay : max 105 ns
  Fall : max 60 ns

Vsd , Diode Forward Voltage Drop at Isd=-5A, Vgs=0 : 
  typ -1.2V, max -1.6V
Reverse Recovery Time at Isd=-1A : typ 500 ns
______________________________________

Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!

______________________________________
 
 
______________________________________

Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!

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