ZTX300 NPN Transistor
ZTX500 compementary PNP Transistor
from a Zetex databook 1995
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| E B C | bottom view
\_____/ inverse as usually for TO92 !
For ZTX500: all voltages with negative signs!
Absolute Maximum Ratings:
Vcbo = Vceo = 25 V
Vebo = 5 V
Ic = 500 mA
Ptot = 300 mW
T = -55 ...175 grdC.
Characteristics at 25 grdC.:
Vce(sat) at Ic=50mA, Ib=5mA (pulsed): max 0.35V
Vbe(sat) at Ic=10mA, Ib=1mA (pulsed): min 0.65V, max 1 V
Current Transfer Ratio at Ic=10mA, Vce=6V : min 50, max 300
Transition Frequency at Ic=10mA, Vce=6V, at f=100MHz: 150MHz
Output Capacitance at Vcb=6V : max 6 pF
Noise Figure at Vce=6V,Ic=100uA,Rs=1500 Ohm, f=1kHz: typ 7 dB
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ ZTX384C NPN Low Noise Transistor from a Zetex Databook 1995: _______ | E B C | bottom view \_____/ inverse as usually for TO92 ! Absolute Maximum Ratings: Vcbo : 45 V Vceo : 30 V Vebo : 6 V Ic : 200 mA Ptot : 350 mW Tj=Ts : -55 to 175 grdC. Characteristics: Static Forward Current Transfer Ratio at Vce=5V: at Ic=10uA : min 100 at Ic=2 mA : min 250, typ 400 at Ic=100mA: min 130 Transition Frequency at Vce=5V, Ic=10mA, f=100MHz: 150 MHz Output Capacitance at Vcb=10V, f=1MHz : typ 2.5 pF, max 5 pF Input Capacitance at Veb=0.5V, f=1MHz : typ 11 pF Noise Figure at Ic=200uA, Vce=5V, f=30Hz to 15kHz (-3dB), Rs=2kOhm: max 4 dB Flicker Noise at the same conds.: max 0.135 uV ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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ZVN0106 N-Channel Enhancement Vertical DMOS Power FET
FERRANTI (Zetex) VMOS databook 1981:
Absolute Maximum Ratings:
Vds = 60 V
Vdg = 60 V
Vgs = +/- 20 V
Idm pulsed 300 us : 5 A
Top = Tstg = -55 to 150 grdC.
Characteristics at 25 grdC.:
Drain Source Breakdown Voltage at Id=1mA, Vgs=0 : min 60 V
Gate Threshold Voltage at Id=1mA, Vds=Vgs :
min 0.8 V, max 2.4 V
Idss at Vds=60V, Vgs=0 : max 1 uA
On state Drain Current , measured under pulsed conditions,
300us, 2% :
at Vds=25V, Vgs=5V : min 0.25 A, typ 0.75 A
at Vgs=10V : min 1 A, typ 2 A
Static Drain Source on Resistance at Id=0.25 A, Vgs=5V :
typ 4 Ohm, max 6 Ohm
at Id=1A, Vgs=10V : typ 2 Ohm, max 4 Ohm
Forward Transconductance at Vds=25V,Id=0.5A :
min 300mS, typ 400 mS
Capacitances at Vds=25V,Vgs=0,f=1MHz :
Input : typ 40 pF, max 50 pF
Output : typ 20 pF, max 25 pF
Reverse Transfer : typ 2 pF, max 5 pF
Times at Vdd=25V, Id=1A, Rgen = 50 Ohm :
On delay : max 5 ns
Rise : max 8 ns
Off delay : max 9 ns
Fall : max 8 ns
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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ZVN0120A N-Channel Enhancement Vertical DMOS FET
ZETEX
_______ bottom view
| S G D |
\_____/
Absolute Maximum Ratings:
Vds = 200 V
Id = 160 mA
Id pulsed = 2 A
Vgs = +/-20V
Ptot = 700 mW
Tj = Tstg = -55...150 grdC.
Characteristics at 25grdC.:
Breakdown Vdss at Id=1mA, Vgs=0: min 200 V
Gate Source Threshold Voltage at Id=1mA, Vds=Vgs:
min 1V, max 3 V
Idss at Vds=200V, Vgs=0: max 10 uA
at Vds=160V, 125 grdC.: max 100 uA
Id(on) at Vds=25V, Vgs=10V : min 500 mA
Rds(on) at Vgs=10V, Id=250mA : max 16 Ohm
Forward Transconductance at Vds=25V, Id=250mA : min 100 mS
Capacitances at Vds=25V, Vgs=0, 1MHz:
Input : max 85 pF
Output, Common Source : max 20 pF
Reverse Transfer: max 7 pF
Times at Vdd=25V, Id=250mA, Source=50 Ohm:
Turn On Delay : max 7 ns
Rise : max 8 ns
Turn Off Delay : max 16 ns
Fall : max 8 ns
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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ZVP0120A P-Channel Enhancement Vertical DMOS FET
_______ bottom view
| S G D |
\_____/
Absolute Maximum Ratings:
Vds = -200 V
Id = -110 mA
Id pulsed = -1 A
Vgs = +/-20V
Ptot = 700 mW
Tj = Tstg = -55...150 grdC.
Characteristics at 25grdC.:
Breakdown Vdss at Id=-1mA, Vgs=0: min -200 V
Gate Source Threshold Voltage at Id=-1mA, Vds=Vgs:
min -1.5 V, max -3.5 V
Idss at Vds=-200V, Vgs=0: max -10 uA
at Vds=-160V, 125 grdC.: max -100 uA
Id(on) at Vds=-25V, Vgs=-10V : min -250 mA
Rds(on) at Vgs=-10V, Id=-125mA : max 32 Ohm
Forward Transconductance at Vds=-25V, Id=-125mA : min 50 mS
Capacitances at Vds=-25V, Vgs=0, 1MHz:
Input : max 100 pF
Output, Common Source : max 25 pF
Reverse Transfer: max 7 pF
Times at Vdd=-25V, Id=-125mA, Source=50 Ohm:
Turn On Delay : max 7 ns
Rise : max 15 ns
Turn Off Delay : max 12 ns
Fall : max 15 ns
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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ZVP3306 P-Kanal Enhancement vertical DMOS FET
FERRANTI = ZETEX
im SOT23- Gehäuse
Absolute Maximum Ratings:
Vds = -60V
Id = - 90 mA
Pulse Drain Current = - 1.6 A
Gate Sorce Voltage = +/- 20 V
Characteristics:
Idss at Vds=-60V, Vgs=0V : max - 0.5 uA
On State Drain Current at Vds=-18V, Vgs=-10V, pulsed:
min -400 mA
Forward Transconductance: at Vds=-18V,Id=-200mA: min 60 mS
Static On State Drain Sorce Resistance
at Vgs=-10V, Id=-200mA: max 14 Ohm
Capacitances at Vds=-18V,Vgs=0V:
Input Capacitance: max 50 pF
Common Source Output Capacitance : max 25 pF
Reverse Transfer Capacitance: max 8 pF
Times at Vds=-18V, Id=-200mA, Source Impedance = 50 Ohm,
Pulse Generator Rise Time < 5ns :
Turn On Delay: max 8 ns
Rise : max 8 ns
Turn Off Delay : max 8ns
Fall : max 8 ns
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Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!