2N174 PNP Power Transistor Case TO-36 Maximum Ratings: Vcb = 80 V Veb = 60 V ! ! ! Ie = 15 A Ib = 4 A Junction and Storage Temp.: -65 to 110 grdC. Thermal Resistance Junction to Case: 0.5 grdC./W Characteristics: Collector Base Cutoff Current at Vcb=80V, Veb=1.5V : max 8 mA Emitter Base Cutoff Current at Veb=60V : max 8 mA Collector Emitter Voltage BVces at Ic=300mA, Veb=0 : min 70 V Collector Emitter Voltage BVceo at Ic=1 A, Ib = 0 : min 55 V Current Gain at Ic=5 A, Vcb = 2 V : min 25, max 50 Base Emitter Voltage at Ic=5 A, Vcb=2 V : typ 0.65 V, max 0.9 V Saturation Voltage at Ic=12 A, Ib=2 A : typ 0,3V, max 0.9 V Common Emitter Cutoff Frequency at Ic=5A, Vce=6V : typ 10 kHz Rise Time at Uce=12V, Ion = 12 A, Ib=2 A : typ 15 us Fall Time at Reb= 10 Ohm, Veb = -6V : typ 15 us From a diagram : Power Dissipation at 25 grdC.: 150 W , derating to 0W at 110grdC. ______________________________________
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______________________________________ 2N320 PNP GERMANIUM transistor for audio TO 5 case, BASE CONNECTED TO CASE !!! Maximum Ratings : Collector Base Voltage : 25 V dc Collector Emitter Voltage : 20 V dc Emitter Base Voltage : 5 V dc Collector Current : 500 mA Power Dissipation at 25 grdC. ambient : 225 mW Tj = Tstg = -65 to 100 grdC. Characteristics : DC Current Gain at Ic=20mA : min 34, max 65 at Ic=100mA : min 30 Base Emitter Voltage at Vce=-1V, Ic=20mA : min 180 mV, max 320 mV Output Capacitance at Vcb=-5V,Ie=1mA, f=1MHz : max 35 pF Frequency Cutoff at Vcb=-5V, Ie=1mA: min 1.5 MHz ______________________________________
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______________________________________ 2N498 NPN Silicon Planar Transistor TO5-Case, Nose - Emitter - Base - Collector=Case Absolute Maximum Ratings : Vcbo = 100 V Vceo = 100 V Vebo = 8 V Ic = ? Pd at Ambient=25 grdC. : 0.8 W at Case = 25 grdC. : 4 W Tj = 200 grdC. Tstg = -65 to 300 grdC.!! Characteristics : Current Transfer Ratio at Ic=200mA, Vce=10V : min 12, max 36 DC Current Gain at Ic=200mA, Vce=10V : typ 27 at Ic=100uA : typ 20 High Frequ. Current Gain at Ic=50mA,Vce=10V,f=20MHz : typ 2.5 Saturation Resistance at Ic=200mA, Ib=40mA : max 25 Ohm Vbe(sat) at Ic=200mA, Ib=40mA : typ 1.1 V Cob at Ie=0, Vcb=10V : typ 13 pF Emitter Transition Capacitance at Ic=0, Veb=0.5V : typ 60 pF FAIRCHILD recommends on this datasheet a replacement by the 2N3107/3108. ______________________________________
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______________________________________ 2N918 Silicon NPN VHF transistor TO72 metal case Bottom viw, clockwise: Nose - Emitter - Base - Collector - Case Maximum Ratings : Vcbo = 30 V Vceo = 15 V Veb = 3 V Ic = 50 mA Pd = 200 mW Tj = Tstg = -65 to 200 grdC. Characteristics : DC Current Gain at Vce=1V, Ic=3mA : min 20, max 200 Small Signal Current Gain hFE at 10V,4mA,100MHz: min 6 dB Vce(sat) at Ic=10mA, Ib=1mA : max 0.4 V Cob at Vcb=10V,Ie=0 : max 1.7 pF Cib at Veb=0.5V, Ic=0 : max 2 pF Noise Figure at Vce=6V, Ic=1mA,f=60MHz,Rg=400 Ohm: max 6 dB ______________________________________
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______________________________________ 2N1039 Germanium PNP medium power Transistor MOTOROLA Case 180, Collector connected to case Maximum Ratings : Vceo = 40 V ( Ic=100mA, Ib=0 ) Vcb = 60 V Veb = 20 V Ic = 3 A Ib = 1 A Pd = 450 mW, derate above 25 grdC.: 0.267 W/grdC. Tj = Tstg = -65 to 100 grdC. Thermal Resistance Junction to Case : max 3.75 grdC./W Characteristics : Collector Cutoff Current at Vce=20V, Ib=0 : max 20 mA at Vcb=30V, Ie=0 : max 125 uA at Vcb=60V, Ie=0 : max 750 uA Coll. Em. Cutoff Current at Vce=60V, Vbe(off)=0.2V : max 0.65 mA at Vce=30V, Tc=85 grdC : max 5 mA Emitter Cutoff Current at Vbe=20V, Ic=0 : max 650 uA DC Current Gain at Ic=50mA,Vce=0.5V : min 33, max 200 at Ic=1A, Vce=0.5V : min 20, max 60 Coll.Em. Saturation Voltage at Ic=1A, Ib=0.1A : max 0.25 V Vbe at Vce=0.5V, Ic=1A : max 1 V ______________________________________
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______________________________________ 2N1548 PNP Germanium Power Transistor: Absolute Maximum Ratings: Vceo = 60 V Vces = 90 V Vcex = 120 V Vcb = 120 V Veb = 60 V Ic continuous = 5 A Ic peak = 10 A Total Device Dissipation at Tcase = 25grdC. : 106 W, derating to 0W at 110 grdC. Thermal Resistance Junction to Case: max 0.8 grdC/W Operating Junction Temp.Range: -65 to 110 grdC. Characteristics: Vcesat at Ic=3A, Ib=0.3A : max 0.2 V DC Current Gain at Ic=3A, Vce=2V: typ 75, max 150 ______________________________________
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______________________________________ 2N1555 PNP GERMANIUM power transistor TO3 Gehäuse Maximum Ratings : Vces = 60 V (Breakdown Ic=300mA) Vceo = 40 V ( Ic=300mA, Ib=0) Vcb = 80 V (Breakdown Ic=20mA) Veb = 40 V ( at Veb=12V : Iebo=<0.5 mA) Ic = 15 A Ic peak = 20 A Pd = 106 W at case temp = 25 grdC. Junction Temp.: -65 to 110 grdC. Thermal Resistance Junction to Case : 0.8 grdC./W Characteristics at 25 grdC.: Current Gain at Vce=2V, Ic=10A : min 30, max 60 Collector Saturation Voltage at Ic=10A, Ib=1A : max 0.7 V Base Emitter Voltage at Ic=10A, Ib=1 A : max 1 V Transconductance at Vce=2V, Ic=10A : min 8 mhos, max 30 mhos ( =S = 1/Ohm) Frequency cutoff : typ 6 kHz From the Safe Operating Areas diagram : Ic peak = 20A until 10V at 5ms pulse, until 30V at 1 ms, 37V at 0.5 ms, 45V at 250us or less. All curves to 0.3A / 60V ______________________________________
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______________________________________ 2N2156 PNP Germanium Power Transistor Absolute Maximum Ratings: Vceo = 30 V Vces = 45 V Vcb = 45 V Veb = 25 V ( Iebo = typ 0.2mA, max 4 mA) Ic = 30 A Total Device Dissipation at Tc=25 grdC.: 170 W Derate above 25 grdC.: 0.5W/grdC. Operating Junction Temperature Range: -65 to 110 grdC. Thermal Resistance Junction to Case : max 0.5 grdC/W Characteristics: Vcesat at Ic=25A, Ib=2A : max 0.3 V DC Current Gain at Ic=5A,Vcb=2V: min 80, typ 105, max 150 ______________________________________
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______________________________________ 2N2868 NPN silicon planar epitaxial transistor manufactured by FAIRCHILD TO5 Bottom view, clockwise: nose, emitter, base, collector and case Maximum Ratings: Vcbo = 60 V Vceo = 40 V Vebo = 7 V Ic = 1 A Pd case at 25 grdC.: 2.8 W case at 100 grdC: 1.6 W at 25 grdC. ambient : 0.8 W Tj = Tstg = -65 to 200 grdC. Characteristics : DC Current Gain at Vce=10V, Ic=10mA : min 30 at Ic=150mA (pulsed) : ,in 40, max 120 at Ic=500mA (pulsed) : min 20 Collector Emitter Saturation Voltage at Ic=150mA, Ib=15mA : max 0.25 V Output Capacitance at Vcb=10V, Ie=0, f=1MHz : max 20 pF High Frequency Current Gain at Vce=10V, Ic=50mA, f=20 MHz : min 2.5 ______________________________________
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______________________________________ 2N2950 NPN RF Power Transistor MOTOROLA Case TO102 Collector connected to case, stud isolated from case. Clockwise: Emitter - Base - Collector Maximum Ratings: Vces = 60 V Vcbo = 60 V Vebo = 3 V Ic = 0.7 A Ib = 100 mA RF Input Power = 1 W RF Output Power = 5 W Ptot at Tcase = 25 grdC. : 6 W Derating above 25 grdC.: 40 mW/grdC. Tstorage : -65 to 175 grdC. Characteristics at 25 grdC.: Vces(sus) at Ic=0.25A, Rbe=0 : min 85 V, typ 120 V Vceo(sus) at Ic=0.25A, Ib=0 : min 40 V DC Current Gain at Vce=2V, Ic=40mA : min 5, max 100 at Vce=2V, Ic=400mA : min 5 Vce(sat) at Ic=400mA, Ib=80mA : max 0.5 V Vbe(sat) at Ic=400mA, Ib=80mA : max 2 V AC Current Gain at Vce=2V, Ic=40mA, f=50MHz : min 2 Collector Output Capacitance at Vcb=25V, Ie=0, f=100kHz : max 20 pF Power Input for Pout=3.5W at Vce=25V, Ic(max)=325mA, f=50MHz : max 0.35 W Efficiency at the same conditions.: min 43 % ______________________________________
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______________________________________ 2N3089 N- Channel FET SILICONIX TO18 : Clockwise: Nose - Drain - Source - Gate=Case Maximum Ratings : Vgd = Vgs = -30V Ig = 50 mA Pd = 400 mW Tstg = -65 to 200 grdC. Characteristics: Idss at Vds=10V : 0.5...2mA Gate Source Cutoff Voltage at Vds=15V, Id=0.1mA: -1...-5 V Comm.Source Forw. Transcond. at Vds=15V,Vgs=-1V : min 300 uS, max 2000 uS Ciss at Vds=15V,Vgs=0,f=1MHz : max 6 pF Crss at Vds=15V,Vgs=0,f=1MHz : max 2 pF Noise Figure at Vds=6V,Vgs=0,Rgen=1MOhm,10Hz...15kHz: 2N3089 : max 3 dB 2N3089A : max 0.5 dB ______________________________________
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______________________________________ 2N3392 NPN Transistor datasheet by GENERAL ELECTRIC 1964 Bottom View _______ | E C B | \_____/ Maximum Ratings: Vcbo = 25 V Vceo = 25 V Vebo = 5 V Ic = 100 mA Ptot = 200 mW (free air 25grdC.) 120 mW at 55 grdC. Tj = 100 grdC. Tstg = -55 to 125 grdC. Characteristics : Forward Current Transfer Ratio at Vce=4.5V, Ic=2mA : min 150, max 300 at Vcb=5V, Ic=20mA, f=20MHz : typ 15 Input Impedance at Vce=10V, Ic=2mA, f=1 kHz : typ 15 Ohm ? ? ? ? ( I think this is the value for f=1MHz ! ) Gain Bandwidth Product at Vcb=5V, Ic=2mA : typ 140 MHz Output Capacitance at Vcb=10V, Ie=0, f=1MHz : min 4.5pF, typ 7 pF, max 10 pF ______________________________________
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______________________________________ 2N3414 NPN general purpose transistor Case TO98 Pins : Emitter, collector, base. I don't know the relation to the plane, there is no drawing... Maximum Ratings : Vceo = 25 V Vcbo = 25 V Vebo = 5 V Ic = 500 mA Pt = 360 mW (ambient = 25 grdC.) Tj = Tstg = -55 to 150 grdC. Characteristics : DC Forward Current Transfer Ratio at Vce=4.5V,Ic=2mA : min 75, max 225 Vce(sat) at Ic=50mA, Ib=3mA : max 0.3 V Vbe(sat) at Ic=50mA, Ib=3mA : max 0.85 V Input Impedance (at Vce=10V, Ic=1mA, f=1kHz) : min 5100 Ohm Output Admittance : min 14, max 21 umhos ______________________________________
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______________________________________ 2N3440 NPN triple diffused mesa silicon transistor THOMSON-CSF 1979 TO39: Nose - Emitter - Base - Collector (bottom view, clockwise) Absolute Maximum Ratings : Vcbo = 300 V Vceo = 250 V Vcex at Vbe=-1.5V : 300 V Vebo = 7 V Ic = 1 A Ib = 0.5 A Ptot at Tcase=25grdC. : 10 W Tj = Tstg : -65 to +200 grdC. Thermal Resistance Junction to Case : max 17.5 grdC./W Characteristics at 25 grdC.: Static forward current transfer ratio at Vce=10V, Ic=20mA : min 40, max 160 at Vce=10V, Ic= 2mA : min 30 Collector-emitter saturation voltage at Ic=50mA, Ib=4mA : max 0.5 V Base-emitter saturation voltage at Ic=50mA, Ib=4mA : max 1.3 V Second breakdown collector current at Vce=200V, t=1 sec : min 50 mA Transition Frequency at Vce=10V, Ic=10mA, 5MHz : min 15 MHz Output capacitance at Vcb=10V, 1 MHz : max 20 pF Safe Operating Area: 1ms pulse : 1A until 24V, Knee at 0.1A/220V, 0.08A/250V 500us pulse: 1A until 45V, Knee at 0.26A/170V, 0.13A/250V 200us pulse: 1A until 100V, Knee at 0.5A/200V, 0.33A/250V 100us pulse: 1A until 190V, 0.7A/250V 50us pulse: 1A/250V Die Ausgangskennlinien zeigen, dass Vce oberhalb Ic=50mA schnell ansteigt, z.B für Ic=150mA, Ib=1.4mA : typ 4 V. Gesättigt mit Ib=15mA auf einem anderen Diagramm aber gerade noch unter 0.5V. Dort z.B für 500mA/50mA Vce sat typ 2V. Bemerkenswert ist die für Hochvolttypen recht hohe Stromverstärkung, laut Diagramm typisch 125 bei 100mA die allerdings für Ströme über 200mA schnell abfällt. Bei 1A nur noch 10 bis 20, je nach Temperatur. Die typische Transitfrequenz zeigt eine schmale Spitze bei 100mA mit typ 60 MHz. ______________________________________
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2N3821 N-channel Silicon Planar Epitaxial JFET
TO72
Bottom View, clockwise: Nose, Source, Drain, Gate, Case.
Absolute Maximum Ratings:
Vgs = -50 V
Vgd = -50 V
Ig = 10 mA
Pd = 300 mW
Tj = 200 grdC.
Tstg = -65 to 200 grdC.
Characteristics at 25 grdC.:
Vgs at Vds=15V, Id=50 uA : min -0.5 V, max -2 V
Idss at Vds=15V, Vgs=0 : min 0.5 mA, max 2.5 mA
at Vds=15V, Vgs=0 :
Common Source Forward Transconductance at f=1kHz:
min 1500 umho, max 4500 umho
Common Source Forward Transadmittance at 100MHz:
min 1500 umho
Common Source Output Conductance at f=1kHz :
min 10 umho
Common Source Input Capacitance at f=1MHz : max 6 pF
Common Source Reverse Transfer Capacitance at f=1MHz :
max 3 pF
Noise Figure at Rgen = 1 meg, BW=5Hz, f=10Hz : max 5 dB
Equivalent Input Noise Voltage at BW=5Hz :
max 200 nV/ squareroot Hz
______________________________________
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______________________________________ 2N3879 NPN Power Transistor from a RCA- datasheet 1974: Maximum Ratings: Vcb0 = 120 V Vcer = 90 V (Rbe=50Ohm), Vce0 = 75 V Veb0 = 7 V Ic = 7 A Ic peak =10 A Ptot = 35 W Derating above 25 grdC: 0.2W/grdC Temp. : -65 ... 200 grdC Thermal Resistance Junction to Case: max 5 grdC/W Characteristics: DC Forward Current Transfer Ratio at Ic=4A: min 12, max 100 Collector to Emitter Saturation Voltage at Ic=4A, Vbe=max 2V: max 1.2V Collector Base Output Capacit. at Vcb=10V : max 175 pF Second Breakdown Collector Current with Base forward biased, at Vce=40V: min 500mA h FE at 10MHz: min 4 Times at Vcc=30V, Ic=4A, Ib=0.4A, Rb=6.8Ohm: Delay: max 40ns Rise: max 400ns Storage: max 800ns Fall: max 400ns ______________________________________
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______________________________________ 2N3962 PNP Transistor in TO18 case Maximum Ratings: Vceo = 60 V Vcbo = 60 V Vebo = 6 V Ic = 200 mA Pd = 0.36 W at Case=25 grdC. : 1.2 W Derate above 25grdC.: 6.85 grdC./W Temp.: -65 ... 200 grdC. Characteristics: DC Current Gain at Vce=5V, Ic=10uA : 100...300 at 1mA : 100...450, at 50mA: min 90 (at 55 grdC.: min 45 ) Vce sat at Iv=10mA, Ib=0.5 mA: max 0.25 V Output Capacitance at Vcb=5V, f=1MHz: max 6 pF Input Cap.at Veb = 0.5V : max 15 pF Input Impedance at Ic=1 mA,f=1kHz: 2.5...17 kOhm Small Signal Current Gain at Ic=1mA, Vce=5V, f=1kHz: min 100, max 550 Magnitude of Forward Current Transfer Ratio, Common-Emitter, at Ic=0.5 mA, Vce=5V,f=200MHz : 2 ... 8 Output Admittance at Ic=1mA, Vce=5V, f=1kHz : 5 ... 40 umhos Noise Figure at Vce=5V and at Ic=20mA, BW = 15.7 kHz : max 3 dB ( 20mA or 20uA ??) at Ic=20uA, BW = 1.5 kHz, f=10kHz, Rs=10 kOhm: max 3 dB at Ic=20uA, BW = 150 Hz, f = 1kHz, Rs=10 kOhm: max 3 dB at Ic=20uA, BW = 15 Hz , f =100Hz, Rs=10 kOhm: max 10 dB at Ic=20uA, BW = 2 Hz , f = 10Hz, Rs=10 kOhm: max 8 dB ______________________________________
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______________________________________ 2N3970 N-Channel JFET TO18 : Bottom view, clockwise: Nose, Source, Drain, Gate=Case! Absolute Maximum Ratings: Vgd = -40 V Vgs = -40 V Ig = 50 mA Ptot at Tc=25 grdC.: 1.8 W Storage Temp.: -65 to 200 grdC. Characteristics at 25 grdC.: Gate Source Cutoff Voltage at Vds=20V, Id=1nA : min -4 V, max - 10 V Idss at Vds=20V, Vgs=0 : min 50 mA, max 150 mA Vds(on) at Vgs=0V, Id=20mA : max 1 V Rds(on) at Vgs=0V, Id=1 mA (static or 1kHz): max 30 Ohm Common Source Input Capacitance at Vds=20V, Vgs=0 : max 25 pF Common Source Reverse Transfer Cap. at Vds=0, Vgs=-12V : max 6 pF Times at Vdd=10V, Vgs(on)=0, Vgs(off)=-10V, Id(on)=20mA : Turn On Delay: max 10 ns Rise : max 10 ns Turn Off: max 30ns ______________________________________
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2N4046 NPN Silicon Planar Epitaxial Switch Transistor
Maximum Ratings:
Vcbo = 50 V
Vce0 = 30 V
Vebo = 6 V
Ic = 500 mA
Pd at case=25 grdC.: 3.5 W
at ambient=25grdC.: 0.8 W
Top = Tstg = -65 ... 200 grdC.
Characteristics:
Vce(sat) at Ic=1A(pulsed), Ib=0.1A : typ 0.5 V, max 0.75 V
at Ic=100ma, Ib=10mA : typ 0.13 V, max 0.2 V
Vbe(sat) at Ic=100mA, Ib=10mA : typ 0.75 V, max 0.86 V
DC Pulse Current Gain at Vce=1V, Ic=100 mA :
min 40, typ 90, max 150
at Vce=5V, Ic=1A (pulsed!) : min 25, typ 65
High frequeccy current Gain at Vce=10V, Ic=50mA, f=100MHz:
min 2.5, typ 4.5
Cob at Vcb=10V, Ie=0 : typ 6 pF, max 12 pF
Cib at Veb=0.5V, Ic=0 : typ 40 pF, max 55 pF
From a diagram: Transit frequency at Vce > 5V, Ic=80mA:
typ 450 MHz
______________________________________
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______________________________________ 2N4204 High Voltage Thyristor Maximum Ratings : Peak Forward Blocking Voltage at 105 grdC.: 800 V Peak Reverse Blocking Voltage at 105 grdC.: 50 V Repetitive Peak Forward Current at 3us pulse, 0,6% duty, at 65 grdC. : 100 A di/dt = 5000 A / us Gate Power - Forward : Peak : 20 W Average : 1 W Gate Current - Forward, Peak : 5 A Gate Voltage, Peak , Forward = Reverse = 10 V Junction Operating Temp.: Blocking : -65 to 105 grdC. Conducting : -65 to 200 grdC. Thermal Resistance Junction to Case : max 3 grdC./W Characteristics : Peak Forward & Reverse Blocking Current at 800V, 105 grdC.: max 2 mA Gate Trigger DC Current at Va=7V, Rl=100 Ohm, at 25grdC.: max 50 mA at -65 grdC.: max 100 mA Gate Trigger DC Voltage at Va=7V, Rl=100 Ohm, at 25 grdC.: max 1.5 V at -65 grdC.: max 2 V at 800V, 105 grdC.: min 0.2 V Holding Current at Gate open, Va=7V, 105grdC.: min 3 mA Forward Voltage Application Rate, linear Rise : dv/dt = min 250 V / us Forward ON Voltage at If=2A : max 1.5 V Turn ON Delay Time : max 200 ns Rise Time : max 100 ns ______________________________________
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______________________________________ 2N4277 PNP Germanium Power Transistor TO 3 Case. Maximum Ratings: Vceo = 20 V Vces = 30 V Vcb = 30 V Veb = 20 V Ic = 60 A DC continuous Ptot = 170 W Derate abowe 25 grdC.: 2 W / grdC. Operating and Storage Junction Temp.: -65 to 110 grdC. Thermal Resistance Junction to Case : max 0.5 grdC./W Characteristics: DC Current Gain at Vce=2V, Ic=15A : min 80, typ 180 at Ic=60A : min 15 Coll. Emitter Saturation Voltage at Ic=15A, Ib=1A : typ 0.15 V at Ic=60A, Ib=6A : typ 0.3 V Base Emitter Saturation Voltage at Ic=15A, Ib=1A : typ 0.6 V at Ic=60A, Ib=6A : typ 1 V Common Emitter Cutoff Frequency at Ic=15A, Vce=2V : min 2 kHz From the diagram: Active Region Safe Operating Area for Tj=110 grdC, Ic vs. Vce: For DC : From 80A/2V down to 1A/40V; For 5 ms Pulse: From 100A/5.5V down to 3A/60V; For 1 ms Pulse: From 100A/8V down to 5A/60V; The Diagram is for all Types of the Family ( The 2N4282 has Vceo max 60V ) For the 2N4277 only the range until 20V is usable. The switching Times are in the 10 us region, but I can't find the Load Resistance for the Test. ______________________________________
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______________________________________ 2N4279 PNP Germanium Power Transistor TO 3 Case. Maximum Ratings: Vceo = 30 V Vces = 45 V Vcb = 45 V Veb = 25 V Ic = 60 A DC continuous Ptot = 170 W Derate abowe 25 grdC.: 2 W / grdC. Operating and Storage Junction Temp.: -65 to 110 grdC. Thermal Resistance Junction to Case : max 0.5 grdC./W Characteristics: DC Current Gain at Vce=2V, Ic=15A : min 80, typ 180 at Ic=60A : min 15 Coll. Emitter Saturation Voltage at Ic=15A, Ib=1A : typ 0.15 V at Ic=60A, Ib=6A : typ 0.3 V Base Emitter Saturation Voltage at Ic=15A, Ib=1A : typ 0.6 V at Ic=60A, Ib=6A : typ 1 V Common Emitter Cutoff Frequency at Ic=15A, Vce=2V : min 2 kHz From the diagram: Active Region Safe Operating Area for Tj=110 grdC, Ic vs. Vce: For DC : From 80A/2V down to 1A/40V; For 5 ms Pulse: From 100A/5.5V down to 3A/60V; For 1 ms Pulse: From 100A/8V down to 5A/60V; ______________________________________
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______________________________________ 2N494A PN-Unijunction-Transistor manufactured in the 1970s by Texas Instrumens. I have a datasheet in german language. I try to translate the most important values: Case T05 Bottom view, clockwise: Nose - Emitter - Base1 - Base2 Case isolated from the terminals Absolute Maximum Ratings: Veb at 150 grdC.: -60 V Ie (RMS) : 70 mA Ie peak at 150grdC.: 2A Ptot at 25grdC.: 450mW Operating Temp.:-65 to 140 grdC. Storage Temp.: -65 to 175 grdC. Characteristics at 25 grdC.: Rbb (Static Interbase Resistance) at U (B2-B1) = 3 V, Ib = 0 : min 6.2, max 9.1 kOhm ON-OFF-Ratio at U(B2-B1)=10V : min 0.62, max 0.75 Ib2mod at Ie=50mA : minb 6.8 mA, max 22 mA Ueb1(sat) at U(B2-B1)=10V,Ie=50mA : max 4.6 V Ie (valley) at U(B2-B1)=20V,Rb2=100Ohm: min 8 mA (end of negative Ueb/Ie ) B1-Peak-Voltage at U1=20V, Rb1=20 Ohm : min 3 V (beginning of negative Ueb/Ie ) ______________________________________
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______________________________________ 2N5027 Switching Transistor General Electric 1967 (Same Chip as 2N2539, TO18, E-B-C ) Bottom View: _______ | E C B | \_____/ Maximum Ratings: Vcbo = 60 V Vce0 = 30 V Vebo = 5 V Ic = 350 mA, peak 10us : 700 mA Pt = 320 mW Top = -65 to 120 grdC. Tstg = -65 to 150 grdC. Characteristics at 25 grdC.: Vce(sat) at Ic=150mA, Ib=15mA : max 0.45 V at Ic=500mA, Ib=50mA : max 1.6 V Vbe(sat) at Ic=150mA, Ib=15mA : min 0.7 V, max 1.3 V at Ic=500mA, Ib=50mA : max 2.6 V DC Forward Current Transfer Ratio at Vce=10V at Ic=1mA : min 20 at Ic=150mA : min 50, max 150 at Ic=500mA : min 20 Small Signal Forward Current Transfer Ratio at Vce=10V, Ic=20 mA, f=100 MHz : min 2.5 Coll.-Base Capacitance at Vce=10V, Ie=0, f=1MHz: typ 5, max 8 pF Emitter-Base Cap. at Veb=0.5V, Ic=0, f=1MHz : max 25 pF ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2N5246 N-Channel JFET manufactured by National Semiconductor in the 70s/80s Case TO-92, bottom view, clockwise: Drain, Source, Gate. Absolute maximum ratings: Vdg = 30 V Vsg = 30 V Id = 30 mA Ig = 50 mA (forward) Pd = 360 mW, abowe 25 grdC. derate 2.88 mW/grdC. Operating and Junction Temp.: -65 to 150 grdC. Characteristics at 25 grdC.: Gate Source Cutoff Voltage at Vds=15V, Id=10nA : min -0.5 V, max -4 V Idss at Vds=15V, Vgs=0 : min 1.5 mA, max 7 mA Common Source Forward Transconductance at Vds=15V, Vgs=0, f=1kHz : min 3, max 6 mS at f=400MHz : min 2.5 mS Common Source Output Conductance at Vds=15V, Vgs=0, at f=1kHz : max 50 uS at f=100 MHz : max 75 uS at f=400 MHz : max 100 uS Common Source Input Conductance at Vds=15V, Vgs=0, f=100MHz: max 100 uS Common Source Input Capacitance at Vds=15V, Vgs=0, f=1MHz : max 4.5 pF Common Source Reverse Capacitance at Vds=15V, Vgs=0, f=1MHz: max 1 pF Noise Figure at Vds=15V, Id=5mA, f=100MHz : max 2 dB at 400 MHz : max 4 dB Common Source Power Gain at Vds=15V, Id=5mA, at f = 100 MHz : min 18 dB at f = 400 MHz : min 10 dB ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2N5641 NPN RF Power Transistor The triangle cutted pin is the collector, opposite : base the other : emitter Maximum Ratings : Vceo = 35 V Vcbo = 65 V Vebo = 4 V Ic = 1 A Pd = 15 W, derate above 25 grdC.: 86 mW/grdC. Tj = Tstg = -65 to 200 grdC. Characteristics : DC Current Gain at Ic=100mA, Vce=5V : min 5 Output Capacitance at Vcb=30V, Ie=0, f=1MHz : typ 8.5 pF, max 15 pF Power input for Pout=7W, at Vce=28V, f=175 MHz : typ 0.4 W, max 1 W Common Emitter Power Gain at Pout=7W, Vce=28V, f=175 MHz : min 8.4 dB, typ 12.5 dB Collector Efficiency at the same conds.: min 60 % ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
2N5777 NPN Photo Darlington
from the MOTOROLA databook 1974
Visible and near IR spectral range
Case TO 92, _______
| E C B |
\ _ /
(clear plastic package, I don't find the exact placement
of the chip in the package )
Absolute Maximum Ratings :
Vceo = 25 V (at Ic=10mA)
Vcbo = 25 V (at Ic=100uA
Vebo = 8 V (at Ie=100uA)
Il = 250 mA
Pd = 200 mW
Op. and Storage junction Temp.: -65 to 100 grdC.
Characteristics at 25 grdC.:
Collector Dark Current at Vce=12V : max 0.1 uA
Collector Light Current at Rad. Flux Density = 2mW/cm2 at 2870K
at Vce=5V: min 0.5, typ 4 mA
DC Current Gain at Vce=5V, Ic=0.5mA : min 2500
Wave Length of Maximum Sensitivity : min 0.7, typ 0.8, max 1 um
Turn ON Delay time : max 100 us
Rise Time : max 250 us
Turn Off Delay Time : max 5 us
Fall Time : max 150 us
Collector Base Capacitance at Vcb = 10V, Ie=0, f=1MHz : max 10 pF
From the diagram Relative Response (%) vs. Wavelength (um):
20% at 0.45um,
35% at 0.5 um,
50% at 0.6 um,
80% at 0.7 um,
100% at 0.8 um,
40% at 1 um,
10% at 1.1 um
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
2N6080/ 6081/ 6082 VHF Communications Transistors
from a THOMSON datasheet
Absolute Maximum Ratings:
Vcbo = 36 V
Vceo = 18 V
Vebo = 4 V
2N6080 2N6081 2N6082
Ic : 1 A 2.5 A 4 A
Pd : 12 W 31 W 65 W
Tj = Tstg = -65 to 200 grdC.
Thermal Resistance Junction to Case:
15 5.6 2.8 grdC./W
Characteristics :
DC Current Gain at Ic=250 mA, Vce=5V : min 5
Gain Bandwidth Prod. at Vce=13.6V,Ic=100mA,fo=100MHz: min 200 MHz
Output Capacitance at Vce=12.5V,Ic=0, fo=1MHz :
max 20 pf max 85 pf max 130 pF
Output Power at Vce=12.5V,fo = 175 MHz, Class C :
min 4 W min 15 W min 25 W
Power Gain at the same conditions:
min 12 dB min 6.3 dB min 6.2 dB
Collector Efficiency at the same conditions:
min 60 % min 60 % min 50 %
Network Impedance at transistor Terminals for Vcc=12.5V, fo=175 MHz:
Pin Pout Input Impedance Output Impedance
2N6080:
0.1 W 3.3 W 1.5 +j1.7 Ohm 5.8 +j1.4 Ohm
0.3 W 3.9 W 2.2 +j1.3 Ohm 7.6 +j9.8 Ohm
0.5 W 5.8 W 2.9 +j0.4 Ohm 8.4 +j6.9 Ohm
2N6081:
1 W 9.3 W 10.8 -j1.0 Ohm 4.0 +j3.0 Ohm
3 W 19.6 W 1.0 -j1.4 Ohm 3.3 +j1.2 Ohm
5 W 27.6 W 1.0 -j1.0 Ohm 2.9 +j0.6 Ohm
2N6082:
2.5 W 17.4 W 0.8 -j1.0 Ohm 2.4 +j1.5 Ohm
5 W 27.5 W 0.9 -j0.9 Ohm 2.1 +j0.4 Ohm
7.5 W 35.8 W 0.9 -j1.1 Ohm 2.2 +j0.1 Ohm
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2N6155 TRIAC from the MOTOROLA databook 1974: Left: MT1 - MT2 - GATE , right. Maximum Ratings: Repetitive Peak Off-state Voltage, Gate open: 400 V Peak Gate Voltage : 10 V On-state Current RMS until 75 grdC.: 10A Full Cycle Sine Wave 50 to 60Hz, 90 grdC : 5 A Peak Surge Current, 75 grdC.: 100 A I2t at t=1 to 8.3 ms, 100 grdC.: 40 A2s Peak Gate Power at 2us pulse, 75 grdC.: 20 W Average Gate Power at 8.3 ms : 0.5 W Peak Gate Current : 2A T operating : -40 to 100 grdC. T stg : -40 to 150 grdC. Thermal Resistance Junction to Case : max 2 grdC./W Characteristics at 25 grdC.: On-state Voltage, either direction, Itm=14A, pulse 1 to 2 ms, duty cycle max 2% : typ 1.3 V, max 1.8 V Gate Trigger Current, Rl=100 Ohm, pulse min 2 us: MT2(+), G(+) : min 6 mA, max 50 mA ( at -40 grdC.: max 100 mA) MT2(-), G(-) : min 10 mA, max 50 mA Holding Current, either direction, initiating current= 200 mA , gate open : typ 6 mA, max 40 mA (at -40 grdC.: max 75mA) Turn ON Time at Itm=14A, Pulse = 2us, Rise Time = 0.1us , 12V, Rs= 100 Ohm : typ 1.5 us, max 2 us Blocking Voltage Appl.Rate at Commutation, f=60Hz, 75 grdC.: ON: Itm=14A, Pulse 4 ms, di/dt=5.3 A/ms OFF: 400V, Vgs=0, Rs= 100 Ohm dv/dt : typ 5 V/us ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
2N6178 NPN Power Transistor
2N6180 PNP complementary
fom a RCA datasheet:
(Without signs for PNP values!)
Maximum Ratings:
Vcbo : 100V
Vcex at Vbe reverse =1.5V: 100V
Vcer at Rbe = 100 Ohm: 90V
Vceo (sus): 75 V
Vebo : 7V
Ic : 2 A
Ib : 1 A
P tot at Tj=25 grdC: 25 W, derating to 0W at 150 grdC.
Tj : -65 to 150 grdC.
Characteristics at 25 grdC.
Saturation: Vce sat at Ic=500mA, Ib=50mA:
2N6178: max 0.5V; 2N6180: max -0.7V
Vbe sat at Ic=500mA, Ib=50mA: max 1.2 V
C obo at Vcb=10V:
2N6178: max 20 pF; 2N6180: max 40 pF
h FE at Vce=4V, Ic=500mA:
2N6178: min 30, max 130; 2N6180: min 30, max 150
f T at Vce=4V,Ic=50mA: min 50 MHz
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2N6347 Triac TO220 : Pins MT1 (left), MT2, Gate Maximum Ratings: Vdrom = 400 V It at Tc=80grdC. 360Grad : 12 A RMS Itsm for one 50Hz cycle : 113 A di/dt at Vd=400V,Igt=200mA, tr=o.1us : 100 A/us I2t (half sine wave) t=10 ms : 64 a2s t=0.5 ms : 23 A2s (die 2er sind Quadrat) Igtm for max 1us : 4 A Pgm for max 1us : 20W Pg(av) : 0.5 W T case = -40 to 110 grdC. T storage = -40 to 150 grdC. Characteristics at Tc=25 grdC.: Vtm at It=17 A peak : typ 1.3 V, max 1.75 V Iho, Gate open, Initial principal current = 200 mA, at Vd=12V : typ 6 mA, max 40 mA ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
2N3644 PNP Silicon switching transistor
Fairchild
TO105 epoxy package,
Bottom view, clockwise: Flat - E - B - C
Absolute Maximum Ratings:
Vcbo = -45 V
Vceo = -45 V
Vebo = -5 V
Pd = 0.7 W (Case = 25 grdC.)
Pd = 0.3 W (Ambient = 25 grdC.)
Operating Temp.: -55to 125 grdC.
Characteristics:
DC Current Gain at Vce=-10V, Ic=1mA : min 80, typ 200
at Vce=-2V, Ic=300mA (pulsed) : min 20, typ 50
HF Current Gain at Vce=-20V, Ic=20mA, f=100MHz : min 2, typ 2.5
Common Base Output Capac. at Vcb=-10V : max 8 pF
Input Cap. at Veb=-0.5 V : max 25 pF
Vce(sat) at Ic=300mA, Ib=30 mA : typ -0.5 V, max 1 V
Turn On Time at Ic=300mA,Ib=30mA,: max 40 ns
Turn Off Time at Ic=300mA, Ib2=-30mA : max 100ns
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
2N6366 NPN RF Power Transistor
Pins:
B
E C
Vielleicht ist der Collector vom Gehäuse isoliert, aber davon
steht hier nichts. Bei einem anderen Typ in diesem Gehäuse
fand ich: Collector am Gehäuse und Schraubstutzen isoliert vom
Gehäuse
Maximum Ratings:
Vce0 = 18 V
Vcbo = 36 V
Vebo = 4 V
Ic = 1 A
Ptot at Tcase = 25 grdC. : 10 W
Derating above 25 grdC.: 57.2 mW/grdC.
Tstorage : -65 to 200 grdC.
Characteristics at 25 grdC.:
DC Current Gain at Vce=5V, Ic=250mA : min 5, max 50
Current Gain Bandwidth Product at Vce=12.5V, Ic=150mA, f=50MHz :
min 50 MHz ! ! !
Output Capacitance at Vcb=12.5V,Ie=0, f=1MHz : max 20 pF
Functional Test at Vcc=12.5V, Pout=2.5W, f1=30MHz, f2=30.001MHz :
Common Emitter Power Gain : min 17 dB
Collector Efficiency : min 38.5 %
Intermodulation Distortion : max -35 dB
Leider ist beim Test der Ruhestrom nicht angegeben. In der
Testschaltung liegt gleichstrommäßig parallel zur Basis Emitter
Strecke eine 1N4001, die über einen Vorwiderstand von 50 Ohm
von 0 bis 5 V gespeist wird.
Das Datenblatt enthält relativ viele Diagramme.
Output Power über Frequenz zeigt, daß er oberhalb 10MHz schnell
absackt.
Output Power über Input Power zeigt bei 3MHz fantastische
Linearität, das dürfte einer IMD von gut 50 dB entsprechen!
Current Gain Bandwith Produkt, die typische Kurve hat das
Maximum bei 150 mA mit 190 MHz.
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2N6368 NPN RF Power Transistor From MOTOROLA databook 1974: Cutted lead collector, opposite base, the others are emitter. Maximum Ratings: Vceo = 20 V ( at Ic=100mA ) Vcbo = 40 V ( at Ic=100mA ) Vebo = 4 V ( at Ie=1mA ) Ic = 8 A Pd = 140 W, derate above 25 grdC.: 0.8 W/grdC. Tstg = -65 to 200 grdC. Characteristics at 25 grdC.: DC Current Gain at Ic=1A, Vce=5V : min 19, typ 20 Current Gain Bandwidth Product at Ic=0.5A, Vce=12.5V, f=50MHz: fT = min 50 MHz, typ 110 MHz Output Capacitance at Vce=12.5V,Ie=0, 1 MHz : typ 300pF, max 400pF Functional Test at Vcc=12.5V, Ic=4.7 ADCmax, Ic quiet=50mA, Pout=40W(PEP), f1=30MHz, f2=30.001MHz, Common Emitter : Power Gain: min 10 dB, typ 11.2 dB Collector Efficiency: min 34 %, typ 40 % Intermodulation Distortion IMD: typ -35 dB, max -30 dB From a diagram Parallel Equivalent Input Capacitance vs. Frequency (Conditions as for funct. test): 7200pF at 3MHz, 4000pF at 10MHz, 2000pF at 30 MHz Parall.Eq.Inp.Resistance as above: 3.7 Ohm at 3 MHz, 2.3 Ohm at 10MHz, 1.4 Ohm at 30MHz Par.Eq.Output Cap: 6300pF at 3MHz, 3500pF at 10MHz, 1200pf at 30MHz Par.Eq.Output Resistance: 3 Ohm at 3MHz, 2.3 Ohm at 10MHz, 1.5 Ohm at 30MHz Input Capacitance at Vcb=0.7V, 1MHz: typ 1500 pF Output Cap. at Vce=12.5V, 1 MHz : typ 300 pF ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
2N6370 NPN RF Power Transistor
from the databook MOTOROLA DISCRETE 1974.
Driver for high power linear ampl. for 28V , 2 to 30MHz.
Maximum Ratings:
Vceo = 36V
Vcbo = 65V
Vebo = 4V
Ic continuous = 1.5 A
Total device dissipation at Tcase=25grdC =20 W
Derate above 25grdC = 0.114 W/grdC
Storage Temp.: -65 to 200grdC
Characteristics at 25grdC:
DC current Gain at Ic=0.5A,Vce=5V: h FE = min 5, typ 50
Current-Gain - Bandwidth Product at Ic=0.5A,Vce=15V,f=50MHz:
f T = min 50 MHz
Output Capacitance at Vce=28V : Cob = max 40 pF
For a tuned test circuit at Ic=470mA, f1=30MHz, f2=30,001MHz
at Vcc=28V, Pout=10W PEP:
Common Emitter Amplifier Power Gain: Gpe = min 12 dB
Intermodulation Distortion Ratio : IMD = max -30dB
Collector Efficiency = min 38%
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
2N6565 SRC
UNITRODE
TO92 case
_______
| K G A |
\_____/
Absolute Maximum Ratings:
Repetitive Peak Off-state Voltage : 400 V
Reverse Voltage : 400 V
On-state Current RMS at Tc=70grdC.: 0.8 A
Peak One Cycle Surge On-state Current: 6 A
Peak Gate Current : 1 A
Peak Gate Power : 1 W
Average Gate Power : 0.01 W
Reverse Gate Voltage : 6 V
Storage : -65 to 150 grdC.
Operating : -65 to 125 grdC.
Specifications at 25 grdC., R GK = 1000 Ohm :
Off-state Current at 400V : max 1 uA
Reverse Current at 400V : max 1 uA
Gate Trigger Current at Vd=6V, RL = 100 Ohm : max 200 uA
at T=-65grdC : max 350 uA
Gate Trigger Voltage at Vd=6V, RL=100 Ohm:typ 0.6 V, max 0.8 V
at T=-65grdC.: max 1.2 V
at Vd=400V, T = 125 grdC.: min 0.1 V
Peak On-state Voltage at I TM = 1.2 A Pulse: typ 1 V, max 1.7 V
Holding Current at Vd=6V : typ 0.7 mA, max 5 mA
at T=-65grdC. : max 10 mA
Critical Rate of Rise -Off-state Voltage at Vd=400V :
dv/dt = typ 75 V/us
Turn on Time at Ig=10mA, It=1A, Vd=400V : typ 0.5 us, max 1.5 us
Critical Commutated Turn-off Time at It=Ir=1A : typ 15 us
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2N6658 Power MOSFET Manufacturer: Siliconix, Semtech Maximum Ratings : Vdso = 90 V Vdgo = 90 V Vgso = 15 V Id = 2 A Ptot = 25 W Tj = Tstg = -55 to 150 grdC. Thermal Resistance Junction to Case : max 15 grdC./W Characteristics at 25 grdC.: Cutoff Voltage at Vds=Vgs, Ids=1mA : min 0.8 V, max 2 V Igss at Vgs=15V, Vds=0 : max 100 nA Idss at Vds=90V, Vgs=0 : max 10 uA Id(on) at Vds=25V, Vgs=10V : typ 1 A Rds(on) at Id=1A, Vgs=10V : max 3 Ohm Transconductance at Vds=24V,Id=500mA: min 170 mS Input Capacitance at Vgs=0, Vds=27V, f=1MHz : max 50 pF Reverse Cap. at Vgs=0, Vds=24V, f=1MHz : max 10 pF Drain Source Cap. at Vds=24V, f=1MHz : max 40 pF Rise Time at ???: max 5 ns Fall Time at Vbs(on) = 10V, ??? : max 5 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
HXTR2101/ 2N6679
HEWLETT-PACKARD
Hermetic ceramic package:
Base = small rectangle, Collector = triangle.
Vces Breakdown = min 30V
Vcbo = max 25V
Vceo = max 16V
Vebo = max 1V !!
Ic = max 35mA (damage for over 70mA)
Ptotal= max 450 mW (Derate 4.8mW/grdC, Tc>106grdC)
Junction Temp. max 200 grdC (damage for over 300grdC)
h FE at Vce=15V,Ic=15mA : min 50, typ 120, max 220.
Tuned Gain min 9dB, typ 10.5dB
_______________________________________
2N6032 / TA7337 = RCA development type number
Power Transistor.
TO204 Gehäuse (Metall)
NPN epitaxial
Absolute Maximum Ratings :
Vcbo = 120V ( TA7337A : 150V )
Vcer at Rbe=<50 Ohm : 110V, (140 V )
Vceo base open : 90 V ( 120 V )
Vebo = 7 V
Ic = 50 A (40 A )
Ib = 10 A
Ie = 50 A ( 40 A )
Ptot = 140 W
Thermal Resistance Junction to Case : max 1.25 grdC./W
Characteristics at 25 grdC.:
Vce(sat) at Ic=50A, Ib=5A : max 1.3V
Vbe(sat) at Ic=50A, Ib=5A : max 2 V
DC Forward Current Transfer Ratio at Vce=2.6V, Ic=50A :
min 10, max 50
at f=5MHz, Vce=10V, Ic=2A : min 10
Second Breakdown Coll. Current with base forward biased, t=1s:
at Vce=24V : max 5.8 A
at Vce=40V : max 0.9 A
Gain Bandwidth Produkt at f=5MHz, Vce=10V, Ic=2A : min 50 MHz
Output Capacitance at Vcb=10V, f=1MHz : max 800 pF
Times at Vcc = 30V, Ic=50A, Ib1= Ib2 = 5 A :
Rise : max 1 us
Storage : max 1.5 us
Fall : max 0.5 us
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
2N7013 N- Kanal Power MOSFET
Das einzige Besondere am 2N7013 ist wohl das Gehäuse,
ein 4- beiniges Dual In Line Gehäuse, wie man es sonst
auch bei Optokopplern findet, oder mit 6 oder mehr
Beinchen bei ICs.
Pins:
1 : Gate
2 : Source
3 = 4 = Drain
Absolute Maximum Ratings :
Vds = 40 V
Vgs = +/- 20 V
Id at 25 grdC. = 1.2 A
at 100 grdC. = 0.8 A
Id pulsed = 10 A
Pd at ambient 25 grdC. = 1 W
at amb. 100 grdC. = 0.4 W
Tj = Tstg = -55 to 150 grdC.
Thermal Resistance Junction to Ambient : max 120 K/W
(Ich nehme an, gilt mit üblicher Leiterplatte)
Characteristics at 25 grdC.:
Gate Threshold Voltage at Id=1mA , Vds=Vgs : min 2 V, max 4 V
On State Drain Current at Vds=2V, Vgs=10V : min 1.2 A
Drain Source On Resistance at Vgs=10V, Id=1A : max 0.35 Ohm
at 125 grdC.: max 0.64 Ohm
Forward Transconductance at Vds=15V, Id=1A : min 1.2 S
Capacitances at Vgs=0, Vds=25V, 1MHz :
Input : typ 220 pF, max 300 pF
Output: typ 120 pF, max 200 pF
Reverse Transfer : typ 30 pF, max 100 pF
Times at Vdd=30V, Id=1.2A, R load=25 Ohm, R gen= 25 Ohm,
Vgen = 10 V :
Turn on delay : typ 7 ns, max 20 ns
Rise : typ 13 ns, max 30 ns
Turn Off Delay: typ 18 ns, max 30 ns
Fall: typ 13 ns, max 25 ns
Source Drain Diode
Forward Voltage at Vgs=0, If=Is max = 1.2A: 1.6 V
Reverse Recovery Time at If=1.2A, dIf/dt=100A/us: typ 45 ns
______________________________________
Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!