2SA1094 PNP Epitaxial Power Transistor TOSHIBA Pins: Base (left) - Collector=Heatsink - Emitter. Complement.: 2SC2564 Maximum Ratings : Vcbo = -140 V ( Icbo <= -50 uA ) Vceo = -140 V ( at Ic=-0.1A, Ib=0 ) Vebo = -5 V ( at I = -10 mA ) Ic = -12 A Ie = 12 A P collector = 120 W Tj = Tstg = -55 to 150 grdC. Characteristics : DC Current Gain at Vce=-5V, Ic=-1A : min 55, max 240 1) Vce(sat) at Ic=-5A, Ib=-0.5 A : max -2 V Vbe at Ic=-5A, Vce=-5V : max -2 V Transit Frequ. at Vce=-10V, Ic=-1A : typ 70 MHz Collector Output Cap. at Vcb=-10V, Ie=0, f=1MHz : typ 220 pF 1) Classification R : 55...110, O : 80...160, Y : 120...240 Safe Operating Area ( from a diagram, Knee- Points ): DC Operation: 12A/10V, 2A/70V 10ms pulsed: 22A/14V, 2A/90V, 0.3A/140V 1ms pulsed: 22A/27V, 4A/100V, 1A/140V DC Current Gain vs. Ic, typical: 120 at 10mA, 130 at 1A, 100 at 6A, 60 at 10A ______________________________________
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______________________________________ 2SA1095 PNP Epitaxial Power Transistor TOSHIBA Pins: Base (left) - Collector=Heatsink - Emitter. Complement.: 2SC2565 Maximum Ratings : Vcbo = -160 V ( Icbo <= -50 uA ) Vceo = -160 V ( at Ic=-0.1A, Ib=0 ) Vebo = -5 V ( at I = -10 mA ) Ic = -15 A Ie = 15 A P collector = 150 W Tj = Tstg = -55 to 150 grdC. Characteristics : DC Current Gain at Vce=-5V, Ic=-1A : min 55, max 240 1) Vce(sat) at Ic=-5A, Ib=-0.5 A : max -2 V Vbe at Ic=-5A, Vce=-5V : max -2 V Transit Frequ. at Vce=-10V, Ic=-1A : typ 60 MHz Collector Output Cap. at Vcb=-10V, Ie=0, f=1MHz : typ 350 pF 1) Classification R : 55...110, O : 80...160, Y : 120...240 Safe Operating Area ( from a diagram, Knee- Points ): DC Operation: 15A/10V, 2.5A/70V 100ms pulsed: 30A/7V, 2.7A/80V, 0.15A/160V 10ms pulsed: 30A/10V, 3A/100V, 0.4A/160V 1ms pulsed: 30A/15V, 6A/100V, 0.7A/160V DC Current Gain vs. Ic, typical: 120 at 10mA, 150 at 1A, 130 at 6A, 60 at 10A ______________________________________
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______________________________________
2SA1455 PNP Transistor
for High Voltage, Low Noise Ampl.
Absolute Maximum Ratings:
Vcbo = -120V
Vceo = -120V
Vebo = -5V
Ic = -50mA
Pc = 200mW
Characteristics:
h FE at Vce=-6V,Ic=-2mA : 180 to 820
Group GR : 180 to 390
Group GS : 270 to 560
Group GE : 390 to 820
f T at Vce=-12V, Ie = 2mA : typ 180MHz
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2SA725 PNP-Transistor
TO92 case, bottom view:
_______
| B C E |
\_____/
Absolute Maximum Ratings:
Vcbo = -35 V
Vceo = -35 V
Vebo = - 5 V
Ic = -100 mA
Pc = 200 mW
Tj = 125 grdC.
Tstg = -55 to 125 grdC.
Characteristics at 25 grdC.:
h FE :
2SA725F : 250 to 500
2SA725G : 400 to 800
2SA725H : 600 to 1200 ( this is NOT a darlington !!! )
Vce(sat) at Ic=-10mA, Ib=-1 mA : max -0.6 V
Vbe at Vce=-6V, Ic=-1mA : typ -0.63 V
f T at Vce=-6V, Ie=1 mA, f=1MHz : typ 100 MHz
Cob at Vce=-6V, Ie=0, f=1MHz : typ 3 pF
NF at Vce=-6V,Ie=0.1 mA, f=1kHz, Rg=10kOhm : typ 0.5 dB
NV (noise voltage?) at Vce=-10V, Ie=1mA, Rg=100kOhm,
Gv=80dB : max 300 mV
NVM ( ?? ) at the same conds. : max 3 V
The datasheet in japanese language has some diagrams
for Noise Figure, all as usual.
h FE is very flat for 0.01 to 10 mA, at 100mA it falls to 30%.
For NV from a diagram : Conditions as above + bandwidth
20Hz to 30 kHz (-3dB),
From Vce=-1 V to Vce=-10V : NV = NV(-10V)+ 0 to 5 %;
At Vce = -20V : NV = NV(-10V) - 4%
______________________________________
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______________________________________ 2SA726 PNP-Transistor TO92 case, bottom view: _______ | B C E | \_____/ Absolute Maximum Ratings: Vcbo = -50 V Vceo = -50 V Vebo = - 5 V Ic = -100 mA Pc = 200 mW Tj = 125 grdC. Tstg = -55 to 125 grdC. Characteristics at 25 grdC.: h FE : 2SA726F : 250 to 500 2SA726G : 400 to 800 2SA726H : 600 to 1200 ( this is NOT a darlington !!! ) Vce(sat) at Ic=-10mA, Ib=-1 mA : max -0.6 V Vbe at Vce=-6V, Ic=-1mA : typ -0.63 V f T at Vce=-6V, Ie=1 mA, f=1MHz : typ 100 MHz Cob at Vce=-6V, Ie=0, f=1MHz : typ 3 pF NF at Vce=-6V,Ie=0.1 mA, f=1kHz, Rg=10kOhm : typ o.5 dB ______________________________________
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______________________________________ 2SA771 PNP Transistor complementary to 2SC1986 Absolute Maximum Ratings: Vcbo = -100V Vceo = -80 V Vebo = -6 V Ic = -6 A Ib = -3 A Pc = 40 W Tj = 150 grdC. Characteristics : DC Forward Current Transfer Ratio at Vce=-4V, Ic=-1A : min 40 Coll. Em. Saturation Voltage at Ic=-3A, Ib=-0.3A : max -1 V Cut off Frequency at Vce=12V, Ie=-0.5A : typ 10 MHz ______________________________________
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______________________________________
2SA991 PNP Silicon Epitaxial Transistor
complementary to 2SC1844, see below
All values as for 2SC1844 except:
Vce(sat) at Ic=-100mA, Ib=-10mA : typ -0.18V, max -0.5V
Cob at Vce=-10V, Ie=0, f=1 MHz : typ 5.5 pF, max 10 pF
From the diagram typ Gain Bandwidth Product vs. Ie :
fTmax = 300 MHz at Ie=20mA
From the diagram DC Current Gain vs. Ic :
0.01 to 20 mA : between 330 and 400,
100 mA : typ 200 only !
2SC1844 NPN Silicon Epitaxial Transistor,
AF Low Noise Amplifier
Bottom View:
_______
| E C B |
\_____/
Absolute Maximum Ratings :
Vcbo = 60 V
Vceo = 60 V
Vebo = 5 V
Ic = 100 mA
Ib = 20 mA
Ptot = 500 mW
Tj = 125 grdC.
Tstg = -55 to 125 grdC.
Characteristics at 25 grdC.:
DC Current Gain hFE at Vce = 6 V :
at Ic=0.1mA: min 150, typ 370
at Ic=1 mA : min 200, typ 400, max 800
Classification: P :200...400, F: 300...600, E: 400...800
Vbe at Vce=6V, Ic=1mA : min 0.55V, typ 0.59V, max 0.65V
Vce(sat) at Ic=100mA, Ib=10mA : typ 0.13V, max 0.3 V
fT at Vce=6V, Ie=-1mA : min 50 MHz, typ 100 MHz
Cob at Vcb=10V, Ie=0, f=1MHz : typ 4.8 pF, max 8 pF
Noise Voltage at Ie=-1mA, R(base to Gnd)=100kOhm,
R(emitter to Gnd)=1 kOhm, Rcoll=RLoad=10 kOhm,
f=10Hz to 1 kHz : typ 30 mV, max 45 mV
From the diagram typ Gain Bandwidth Product vs. Ie :
fTmax = 500 MHz at Ie=-40mA
From the diagram Noise Figure vs. Rg and Ic at Vce=6V,
f=1 kHz,..?(very small diagram, I need a microscope):
Area for NF better than 0.5 dB:
0.01mA/12 to 300 kOhm
0.1mA/1.4 to 30 kOhm
1 mA/260 Ohm to 3 kOhm
3.5mA/500 Ohm(highest Ie for this area)
The typ. DC Current Gain is very flat for 0.01...100 mA:
between 330 and 420.
______________________________________
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______________________________________ 2SB676 PNP Power Darlington Transistor TO220, übliche Anschlußbelegung B C E Der erste Transistor hat einen internen Basis-Emitter Parallelwiderstand von 4,5 kOhm, die Endstufe von 300 Ohm. Im Folgenden habe ich die PNP-typischen Minuszeichen weggelassen. Maximum Ratings: Vcbo = 100 V Vceo = 80 V Vebo = 5 V Ic = 4 A Pc = 30 W (bis 25 grdC.) Tj = Tstg = -55 to 150 grdC. Characteristics at 25 grdC.: DC Current Gain at Ic=1A, Vce=2V : min 2000 at Ic=3A : min 1000 Vce(sat) at Ic=3A, Ib=6mA : max 1.5 V Vbe(sat) at Ic=3A, Ib=6mA : max 2 V Times at Vcc=30V, Rload=10 Ohm, Ib1 = -Ib2 = 6 mA: Turn On : typ 150 ns Storage : typ 800 ns Fall : typ 400 ns ______________________________________
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______________________________________ 2SB706 PNP triple diffused transistor Maximum Ratings: Vcbo = 180 V Vceo = 180 V Vebo = 5 V Ic = 10 A Ic pulse 350us = 15 A Ptot = 200 W (Junction = 25 grdC., siehe unten) Tj = 150 grdC. Tstg = -55 to 150 grdC. Characteristics : DC Current Gain at Vce=5V, Ic=2A : 2SB706S : min 40, max 80 2SB706R : min 60, max 120 2SB706Q : min 100, max 200 Vce(sat) at Ic=10A, Ib=1A : typ 1.9V, max 3 V Vbe(sat) at Ic=10A, Ib=1A : typ 2.3V, max 3 V Transit Frequency at Vce=5V, Ic=0.2A : typ 14 MHz Collector Base Capacitance at Vcb=10V, Ie=0, f=1MHz : typ 450 pF Das Gehäuse ist selten. So sahen später Single- In- Line Leistungs- ICs aus. Wenn ich wie bei ICs links unten mit dem Zählen beginne, haben die Beinchen folgende Bedeutung: Pins: 1 : Collector 2 : Basis 3 : Emitter 4 : Collector Leider sehe ich hier nicht, ob auf der Rückseite ein Blech als Kontakt zum Kühlkörper frei liegt, und ob das Blech mit dem Collector verbunden ist, wie ich annehme. Leider fehlt eine Angabe des Wärmewiderstandes. Aus einem Diagramm: Auf ein 500 Quadratzentimeter großes Kühlblech geschraubt ist Ptot statt 200W nur 43 W ! und bei 100 cm2 nur 21W. Auch das Safe Operating Areas Diagramm relativiert die gut klingenden Werte: Bei Ic=2A muß wegen Second Breakdown die max Vce auf 80V reduziert werden Was einen Ersatz angeht: Es hat nicht lange gedauert, den Typ im TO3 Gehäuse finden, von dem höchst wahrscheinlich der Chip stammt, der in dieses Plastikgehäuse verpflanzt wurde: 2SB600. ______________________________________
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______________________________________ 2SB1335 PNP Power Transistor ROHM TO220FP full isolated, Absolute Maximum Ratings: Vcbo = -80 V Vceo = -60 V Vebo = -5 V Ic = -4 A Pulse : - 6 A Pc = 30W at Tc=25 grdC. Tj = 150 grdC. Storage : -55 to 150 grdC. Characteristics at 25 grdC.: Vce(sat) atIc=-3A, Ib=-0.3A : max -1.5 V Vbe(sat) atIc=-3A, Ib=-0.3A : max -1.5 V h FE at Vce=-5V, Ic=-1A : 60.....320 2SB1335D : 60...120 2SB1335E :100...200 2SB1335F :160...320 no A Type ! fT at Vce=-5V,Ie=0.5A : typ 12 MHz Cob at Vcb=-10V, Ie=0, f=1MHz : typ 100 pF ______________________________________
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______________________________________ 2SC461 NPN epitaxial planar Transistor case TO92: Bottom view: ______ | E C B | \_____/ Absolute Maximum Ratings at 25 grdC.: Vcbo = 30 V Vceo = 30 V Vebo = 5 V Ic = 100 mA DC Pc = 200 mW Tj = 150 grdC. Tstg = -55 to 125 grdC. Characteristics at 25 grdC: h FE at Vce=12V, Ic=2mA : min 35, max 200 A- type : 35 to 70 B- type : 60 to 120 C- type : 100 to 200 Vce(sat) at Ic=10mA, Ib=1 mA : max 1.1 V fT at Vce=12V, Ic=2mA : typ 230 MHz Cob at Vcb=10V, Ie=0, f=1MHz : typ 1.8 pF, max 3.5 pF PowerGain at Vce=6V, Ie=-1mA, f=100 MHz : min 13 dB, typ 17 dB Noise Figure at Vce=6V, Ic=2mA, f=1MHz, Rg=500 Ohm : typ 2 dB ______________________________________
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______________________________________ 2SC943 NPN Silicon Epitaxial Switching Transistor TO18 case: Nose - Emitter - Base - Collector=Case Absolute Maximum Ratings: Vcbo = 60 V Vceo = 40 V Vebo = 8 V Ic = 200 mA Pt = 300 mW Tj=Tstg = -65 to 150 grdC. Characteristics : Current Gain h FE at Vce=1V, Ic=10mA : min 80,typ 150, max 320 at 100 mA : min 30, typ 75 Vce(sat) at Ic=100mA, Ib=10mA : typ 0.15 V, max 0.7 V Vbe(sat) at Ic=100mA, Ib=10mA : typ 0.86 V, max 1.2 V Transit Frequ. at Vce=10V, Ie=-10mA: min 150 MHz, typ 250 MHz Cob at Vce=10V, Ie=0, f=1MHz : typ 3.4 pF, max 5.5 pF Times for Vcc=10V, Rc=1 kOhm: Switch On Time : typ 95 ns Storage Time : typ 190 ns Fall Time : typ 240 ns ______________________________________
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______________________________________ 2SC1400 NPN Epitaxial Transistor Audio Frequ. Low Noise Ampl. _______ | E C B | bottom view \_____/ Absolute Maximum Ratings: Vcbo = 100 V Vceo = 80 V Vebo = 5 V Ic = 50 mA Ib = 10 mA Pt = 250 mW Tj = Tstg = -55 to 125 grdC. Characteristics : DC Current Gain at Vce=3V, Ic=0.1 mA : min 170, typ 560 at Ic=0.5 A : min 225, typ 600, max 1000 1) Vce(sat) at Ic=50mA, Ib=5 mA : typ 0.09 V, max 0.3 V Vbe(sat) at Ic=50mA, Ib=5 mA . typ 0.81 V, max 1V Transit Frequency at Vce=6V, Ie=-1mA : min 50 MHz, typ 100 MHz Cob at Vcb=6V, Ie=0, f=1MHz : typ 2.7 pF, max 5 pF Noise Figure at Vce=6V, Ic=0.3A, Rg=10 kOhm, at f=10Hz : typ 2.8 dB, max 10 dB at f=100 Hz : typ 0.8 dB, max 3 dB 1) h FE Classification : F : 225...450, E : 350...700, U : 500...1000 ______________________________________
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______________________________________ 2SC1586 NPN Power Transistor TO3 Metallgehäuse Maximum Ratings: Vcbo = 250 V Vceo = 200 V Vebo = 6 V Ic = 15 A Ib = 5 A Pc = 150 W Tj = Tstg = -65... 150 grdC. Characteristics: DC Forward Current transfer Ratio at Vce=4V, Ic=5A: min 30 Vce(sat) at Ic=10A, Ib=1A : max 3 V Cut-off Frequency at Vce=12V, Ie=-0.5 A : typ 10 MHz Times at Vcc=40V, Ic=10A, Ib1=1A, Ib2=-1A, Load=4 Ohm: Rise : typ 1.3 us Storage: typ 2 us Fall : typ 1 us Complementärtyp 2SA909 ______________________________________
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______________________________________ 2SC1645 NPN Darlington Transistor: From a ROHM datasheet: TO92, Bottom View: _______ | E C B | \_____/ Absolute Maximum Ratings at 25 grdC.: Vcbo = 40 V Vces = 32 V Vebo = 6 V Ic = 300 mA DC Ic peak = 1.5 A 10ms pulse Pc = 300 mW Tj = 125 grdC. Tstg = -55 to 125 grdC. Characteristics at 25 grdC: h FE at Vce=5V, Ic=100mA : 2SC1645A :min 1000 ; 2SC1645B : min 5000 Vce(sat) at Ic=200mA, Ib=0.4 mA : max 1.5 V fT at Vce=5V, Ie=-10mA : typ 250 MHz Cob at Vcb=3V, Ie=0, f=1MHz : typ 3 pF From a diagram hFE vs. Ic:(typical) 15 000 at 10mA; 55 000 at 100mA ; top= 75 000 at 300mA; 10 000 at 1100 mA. ______________________________________
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______________________________________ 2SC1819M NPN Triple Diffused Planar Transistor TO220 Absolute Maximum Ratings: Vcb0 = 300 V (Ic=100uA, Ie=0) Vceo = 300 V (Ic=100uA, Ib=0) Vebo = 7 V (Ie=100uA, Ic=0) Ic = 100 mA Ic peak = 200 mA Pc = 15 W Tj = 150 grdC. Tstg = -55 to 150 grdC. Thermal Resistance Junction to case : ? From a diagram: Pc=15W until 25 grdC, above 25 grdC. derating to 0 at 150 grdC. Characteristics: h FE1 at Vce=50V, Ic=5mA : min 50, max 250 h FE2 at Vce=10V, Ic=30mA : min 30 Vbe at Vce=10V, Ic=30mA : max 1.2 V Vce(sat) at Ic=50 mA, Ib=5mA : max 1.5 V Gain Bandwidth Prod. fT at Vce=30V, Ic=20mA : min 70 MHz, typ 100 MHz Cob at Vcb=30V, Ie=0, f=1MHz : max 5 pF From the SOA diagram: Single Pulse 10 ms : Ic=100mA until 200V, derating to 50mA at 300V Single Pulse 1 s : 100mA until 130V, derating to 70mA at 300V (knee), and to 20mA at 300V ______________________________________
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______________________________________ 2SC1831 NPN Silicon Power Transistor TO3 Case Absolute Maximum Ratings: Vcbo = 90 V Vce0 = 70 V Vebo = 6 V Ic = 8 A Ib = 3 A Pc = 100W at 25 grdC Temp.: -65 to 150 grdC Characteristics: Max. Collector Base Cutoff Current at Vcb = 90V : max 1 mA Max. Base Emitter Cutoff Current at Veb = 6 V: max 1 mA DC Forward Current Transfer Ratio at Vce=4V, Ic=1A: min 500 Collector Emitter Saturation Voltage at Ic=3A, Ib=0.03A: max 1V Cut Off Frequency at Vce=12V, Ie=-0.5A: typ 10MHz Times at Ic=3A, Ib= 50mA/-100mA, Rl=4Ohm: Rise Time: typ 2.3 us Storage Time: typ 4.9 us Fall Time: typ 2.2 us Selected from diagrams: Ube for Ic=5A at 25grdC: typ 0.8V Maximum of Current Transfer Ratio at Ic = 0.1A to 1A: min 500, typ 1000, max 2000 - top for Non-Darlington !!! Maximum Areas for safe Operation: Ic=30A allowed, Derating beginning with... for single 3ms pulse: 30A until 27V, Knee at 17A,50V. for single 5ms pulse: 30A until 18V, Knee at 14A,40V. for single 20ms pulse: 30A until 12V, Knee at 10A,35V for DC: 8A, Derating beginning with 13V, Knee at3.5A,30V Finally a diagram never seen before in other datasheets: Transient Thermal Resistance Characteristics: Values ... grdC/W: Beginning with 0.2 grdC./W at 1ms. 0.5 grdC/W at 10ms 0.7 grdC/W at 100ms 1.3 grdC/W at 2000ms ______________________________________
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______________________________________ 2SC1986 NPN Power Transistor Komplementärtyp : 2SA771 Absolute Maximum Ratings: Vcbo = 100V Vceo = 80 V Vebo = 6 V Ic = 6 A Ib = 3 A Pc = 40 W Tj = 150 grdC. Characteristics : DC Forward Current Transfer Ratio at Vce=4V, Ic=1A : min 40 Coll. Em. Saturation Voltage at Ic=3A, Ib=0.3A : max 1 V Cut off Frequency at Vce=12V, Ie=-0.5A : typ 10 MHz Times at Vcc=9V, Ic=3A, Ib1= -Ib2 = 300mA, Rload = 3 Ohm : Rise : typ 1.1 us Storage : typ 1.8 us Fall : typ o.55 us Aus den Diagrammen geht nichts auffälliges hervor. Dieser alte Typ hat noch eine recht große Abhängigkeit der Stromverstärkung vom Strom: Bei 10mA und 2A etwa 60% vom Maximalwert bei 300mA. ______________________________________
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______________________________________ 2SC2026 NPN VHF-UHF Transistor _______ | B E C | Bottom View \_____/ Maximum Ratings: Vcbo = 30 V Vceo = 14 V Vebo = 3 V Ic = 50 mA Pt = 250 mW Tj = Tstg = -55... 150 grdC. Characteristics : h FE at Vce=10V, Ic=10mA : min 25, typ 80, max 200 fT at Vce=10V, Ic=10mA : min 1.5 GHz, typ 2 GHz Cob at Vce=10V, Ie=0, f=1MHz : typ 0.75 pF, max 1.1 pF Gp at Vce=10V, Ic=10mA, f=500MHz : min 13 dB, typ 15 dB Noise Fig. at Vce=10V, Ic=3mA, f=500MHz, Rg=50Ohm: typ 3 dB, max 4 dB ______________________________________
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______________________________________ 2SC2037 NPN VHF-UHF Transistor _______ | E B C | Bottom View \_____/ Maximum Ratings: Vcbo = 30 V Vceo = 14 V Vebo = 3 V Ic = 50 mA Pt = 250 mW Tj = Tstg = -55... 150 grdC. Characteristics : h FE at Vce=10V, Ic=10mA : min 25, typ 80, max 200 fT at Vce=10V, Ic=10mA : min 1.5 GHz, typ 2 GHz Cob at Vce=10V, Ie=0, f=1MHz : typ 0.75 pF, max 1.3 pF Gp at Vce=10V, Ic=10mA, f=500MHz : min 11 dB, typ 13 dB Noise Fig. at Vce=10V, Ic=3mA, f=500MHz, Rg=50Ohm: typ 3 dB, max 4 dB ______________________________________
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______________________________________ 2SC2869 NPN Microwave Transistor From the NEC databook Microwave and RF 1989-1990. The 2SC2869 is the EIAJ version of the NE21937. Outline 37 = Disc Mold (X), long pin Collector, opposite Base, the other 2x Emitter Absolute Maximum Ratings: Vcbo = 20 V Vceo = 10 V Vcer for R=10 Ohm : 10 V Vebo = 1.5 V Ptotal = 250 mW Ic = 80 mA Tj = Tstg = -65 to 200 grdC. Thermal Resistance Junction to Ambient : max 500 grdC./W Characteristics: Current Gain at Vce=8V, Ic=20mA : min 30, typ 100, max 300 Coll to Base Cap at Vcb=8V, Ie=0 : typ 0.7 pF, max 1 pF Gain Bandwidth Product at Vce=8V, Ic=20mA . typ 8 GHz Insertion Power Gain at Vce=8V,Ic=20mA : at f=1 GHz : typ 13 dB at f=2 GHz : typ 7 dB Minimum Noise Figure (and associated Gain) at Vce=8V, Ic=5mA : at f=1 GHz : typ 1.2 dB (Gain = typ 12 dB), max 2.5 dB at f=2 GHz : typ 2.2 dB Maximum available Gain at Vce=8V, Ic=20mA : at f=1 GHz : typ 16 dB at f=2 GHz : typ 10 dB ______________________________________
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______________________________________ 2SC2926 NPN Epitaxial Planar RF Amplifier Transistor from a ROHM datasheet. _______ | E C B | \_____/ bottom view Absolute Maximum Ratings: Vcbo = 30 V Vceo = 19 V Vebo = 4 V Ic = 50 mA Pc = 300 mW Tj = Tstg = -55 to 125 grdC. Characteristics at 25 grdC.: Vce(sat) at Ic=10mA, Ib=1mA : typ 0.1 V h FE at Vce=10V, Ic=5mA : min 39, max 270 classes: M : 39...82, N: 56...120, P: 82...180, Q: 120...270 Transit Frequ. at Vce=10V, Ic=10mA : min 600 MHz, typ 1100 MHz Cob at Vcb=10V, f=1MHz : typ 1.2 pF, max 1.5 pF ______________________________________
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______________________________________ 2SC3311/ 2SC3311A NPN low noise transistor from the Panasonic databook 1990: Bottom View: _______ | E C B | 2 x 4 x 3 high plastic case |_______| Maximum Ratings: Vcbo = 30V , 2SC3311A: 60 V Vceo = 26V , 2SC3311A: 50 V Vebo = 7 V Ic = 100 mA, peak 200 mA Pc = 300 mW Tj = Tstg = -55 ... 150 grdC. Characteristics: DC Current Gain, h fe at Vce=10V, Ic=2mA: Q : 160...260 R : 210...340 S : 290...460 Transition Frequency at Ie=-1mA, f=200MHz : typ 150 MHz Collector Output Capacitance at Vce=10V, Ie=0, f=1MHz : typ 3.5 pF Noise Voltage vs. Ic from a diagram (Vce=10V, FLAT): Rg=4.7 kOhm: 20mV/0.1mA, 40mV/1mA Rg= 20 kOhm: 35mV/0.1mA, 70mV/1mA Rg=100 kOhm: 50mV/0.1mA,200mV/1mA ______________________________________
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______________________________________
2SC3722 NPN Transistor for High Voltage, Low Noise
from a ROHM datasheet
complementary : 2SA1455
SMT case
___C___
|_______| top view
B E
Absolute Maximum Ratings:
Vcbo = 120V
Vceo = 120V
Vebo = 5V
Ic = 50mA
Pc = 200mW
Tj = Tstg = -55...125 grC
Characteristics:
h FE at Vce=6V, Ic=2mA : 180 to 820
Group IR : 180 to 390
Group IS : 270 to 560
Group IE : 390 to 820
f T at Vce=12V, Ie = 2mA : typ 140MHz
Cob at Vcb=12V, Ie=0, f=1MHz : typ 2.5 pF
Noise for FLAT AMP(Gv=80dB), at Vce=10V, Ic=1mA, Rg=100kOhm:
NV1 : max 150 mV
NV2 : max 14 dB
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2SC3858 NPN Power Transistor Gehäuse und Hersteller fehlen auf diesem Datenblatt, wahrscheinlich stand das nur auf dem weggeworfenen Umschlag. Complement Type: 2SA1494 Absolute Maximum Ratings: Vcbo = Vce0 = 200V Vebo = 6 V Ic = 17 A Ib = 5 A Pc at 25grdC = 200 W Tj = 150 grdC Characteristics: h FE at Vce=4V, Ic=8A : min 30 Vce sat at Ic=10A, Ib=1A : max 2.5 V f T at Vce=12V, Ie=-1A : typ 20 MHz Ausserdem gibt es einige winzige Bildchen. Von Interesse ist wohl die Kurve des Collektorstroms über der Basis- Emitter- Spannung: Bei 25 grdC beginnt sie bei 0,6V. Bei 0,8V gibt es typisch Ic=1,2A, bei 1V : 3,6A, und erst bei 2V sind es 13A. Für den erlaubten Spitzenstrom von 17A muß man mit 2,7V rechnen. Weil dann fast 1A Basistrom fließen kann, wird eine erhebliche Steuerleistung benötigt. ______________________________________
Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!
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2SC4040 Medium Power Epitaxial Planar NPN Transistor
Emitter - Collector - Base
Absolute Maximum Ratings :
Vcbo = 40 V (at 50 uA)
Vceo = 32 V (at 1 mA)
Vebo = 5 V
Ic = 1 A
Pc = 600 mW
Tj = Tstg = -55 to 125 grdC.
Characteristics :
DC Current Gain h FE at Vce=3V, Ic=100mA : min 82, max 390
2SC4040P : 83...180
Q : 120...270
R : 180...390
Vce(sat) at Ic=500mA, Ib=50mA : max 0.4 V
Transit Frequency at Vce=5V,Ie=-50mA : min 50MHz, typ 150MHz
Cob at Vcb=10V,Ie=0, f=1 MHz : typ 15 pF, max 30 pF
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2SD1469M NPN silicon epitaxial planar transistor for medium power amp. from a ROHM datasheet Plastc case, Emitter Collector Base The same Chip and Case, having long pins, has the type number: 2SD1865 Maximum Ratings : Vcbo = 30 V ; at Ic=50 uA Vceo = 15 V ; at Ic=1mA Vebo = 5 V ; at Ie=50uA Ic = 1 A Pc = 600 mW at Ta=25 grdC. Tj = Tstg = -55 to 125 grdC. Characteristics at Ta=25 grdC.: Vce(sat) at Ic=0.5A, Ib=50mA : typ 0.08 V, max 0.4 V h FE at Vce=3V, Ic=100mA: ...Q : 120 to 270 ...R : 180 to 390 ...S : 270 to 560 Transit Frequency at Vce=5V, Ie=-50mA : min 50 MHz, typ 150MHz Cob at Vce=10V, f=1MHz : typ 15 pF, max 30 pF ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
2SD2132 NPN Transistor
_______
| E C B | bottom view
\_____/
2SD2144S is the same Chip in a small case
having Pc=300mW instead of 625mW.
Absolute maximum ratings:
Vcbo = 25 V (at 10uA)
Vceo = 20 V (at 1 mA)
Vebo = 12 V ! ! !
Ic = 500 mA
Ic(pulse 10ms) = 1 A
Pc = 625 mW
Tj = Tstg = -55 to 150 grdC.
Characteristics:
DC Current Gain h FE at Vce=3V, Ic=10mA : min 560, max 2700 ! !
(it is NOT a darlington ! )
2SD2132U : 560...1200
V : 820...1800
W : 1200..2700
Vce(sat) at Ic=500mA, Ib=20mA : typ 0.18 V, max 0.4 V
Ron at Ib=1mA,Vi=100mVrms, f=1kHz : typ 0.8 Ohm
Transit Frequency at Vce=10V, Ie=-50mA, f=100MHz : typ 350 MHz
Cob at Vce=10V, Ie=0, f=1MHz : typ 8 pF
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
2SD648A NPN Triple Diffused Mesa Darlington Transistor.
TOSHIBA
For 2SD648 without A suffix I don't possess any datasheet.
Maximum Ratings:
Vcbo = 300 V
Vceo(sus) = 300 V
Vebo = 4 V
Ic = 400 A
Ie = -400 A
Ib = 12 A
Tj = 125 grdC.
Tstg = -40... 150 grdC.
Thermal Resistance, double Side Cooling: 0.04 grdC./W
Mounting Force Required : 1000 +/- 100 kg !!
Characteristics at 25 grdC.:
DC Current Gain at Vce=5V, Ic=400A : min 100, typ 400
Vce(sat) at Ic=400A, Ib=8A : max 2 V
Vbe(sat) at Ic=400A, Ib=8A : max 2.5 V
Times at Ic=400A, Ib1=4A, -Ib2=4A, Vc=100V :
Turn On : typ 1 us, max 3 us
Storage : typ 8 us, max 13 us
Fall : typ 2 us, max 3 us
Safe operating area:
Pulsed 2 ms : 400A until Knee at 20V; 54A/160V; 9A/300V
(160..300V = Second Breakdown limited)
Pulsed 1 ms : Knee at 600A/24V; 70A/200V; 40A/300V
Pulsed 200us: Knee at 600A,75V; 150A/300V
From a diagram DC Current Gain vs. Ic:
For 25 grdC. : Top = typ 1000 at 120 A
For 100 grdC.: Top = typ 1700 at 50 A
______________________________________
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______________________________________ 2SD973 NPN Transistor Pins: Base - Collector - Emitter Absolute Maximum Ratings: Vcbo = 30 V ( A- Type : 60 V ) Vceo = 25 V ( A- Type : 50 V ) Vebo = 5 V Ic peak = 1.5 A Ic = 1 A Pc = 1 W ( at 1 cm x 1 cm copper board on the PCB Tj = 150 grdC. Tstg = -55 to 150 grdC. Characteristics: DC Current Gain at Vce=10V,Ic=0.5A min 85, typ 160, max 340 Ranking: Typ Q : 85 to 170, Typ R : 120 to 240, Typ S : 170 to 340 Coll. Emitter Saturation Voltage at Ic=0.5A, Ib=50mA : typ 0.2V, max 0.4V Vbe(sat) at the same conditions: typ 0.85 V, max 1.2 V Transition Frequ. at Vcb=10V, Ie=-50mA, f=200MHz : typ 200 MHz Collector Output Capacitance at Vcb=10V, Ie=0, f=1MHz : typ 11 pF, max 20 pF ______________________________________
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______________________________________ 2SJ108 P- channel JFET _____ |D G S| \___/ MAXIMUM RATINGS: Vdgs : 25 V Ig : -10 mA Pd 200 mW Tj, Tstg : -55 to 125 grdC. CHARACTERISTICS at Vds=-10V : Idss at Vgs=0 : min -1 mA, max -20 mA Vgs(off) at Id=-0.1 uA : min 0.15 V, max 2 V Forward Transfer Admittance at Vgs=0 : min 8 mS, typ 22 mS Input Capacitance at Vgs=0, f=1 MHz : typ 105 pF Reverse Transfer Cap. at Id=0 : typ 32 pF Noise Figure at Id =-1mA, Rg=1 kOhm, f=10 Hz : typ 1dB, max 10dB at f= 1 kHz : typ 0.5 dB, max 2 dB ______________________________________
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______________________________________ 2SJ114 P- Channel MOSFET Complementary, datas as for 2SK400, Exceptions: Drain Source Saturation Voltage at Id=4A pulsed, Vgs=15V : typ -2.4 V , max -3.2 V Input Capacitance at Vgs=0V, Vds=10V, f=1MHz : typ 1000 pF Output Capacitance at Vgs=0V, Vds=10V, f=1MHz: typ 400 pF Reverse Transfer Cap. at Vgs=0V, Vds=10V, f=1MHz : typ 70 pF Times at Id=2A: Vgs=15V, RL=15 Ohm : Turn On Delay : typ 15 ns Rise : typ 35 ns Turn Off delay : typ 100 ns Fall : typ 60 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2SJ116 P-Channel MOSFET HITACHI Absolute Maximum Ratings: Vdss = -400V Vgss = +/- 20V Id = -8 A Id peak = -12 A P channel = 125 W Temp. channel= 150 grd C Characteristics: Gate to Source Cutoff Voltage at Vds=-10V, Id=-1mA : min -0.2 V, max -5 V Static Drain Source On State Resistance at Id=-4A, Vds=-15V : typ 1.75 Ohm, max 2.25 Ohm. Drain to Source Saturation Voltage at Vgs=-15V, Id=-4A : typ. -7 V, max -9 V Forward Transfer Admittance at Vds=-10V, Id=-4A : min 1.2 S, typ 1.7 S (S=1/Ohm) Capacitances at Vds=-10V, Vgs=0V, f=1MHz : Input : typ 1400 pF Output : 330 pF Reverse Transfer Cap. : typ 25 pF Times for Id=-2A, Vds=-15V, R load=15Ohm : Turn On Delay = typ 15ns Rise = typ 45 ns Turn Off Delay = typ 160 ns Fall = typ 60 ns Body Drain Diode Forward Voltage at If=4A : typ -0.9 V Reverse Recovery Time typ 400 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2SJ119 P- channel Power MOSFET HITACHI complementary: 2SK414 case TO3P, Gate - Drain=Flange - Source Absolute Maximum Ratings at 25 grdC.: Vds = -160 V Vgs = +/- 20 V Id = -8 A Id peak = -12 A Channel Dissipation = 100 W T channel = 150 grdC. Storage Temp.: -55 ... 150 grdC. Characteristics: Gate Source Cutoff Voltage at Vds=-10V, Id=-1mA : min -2 V , max -5 V Idss at Vgs=0 V, Vds=-140 V : max 1 mA Static Drain Source On-state Resistance at Id=-4A, Vgs=-15V : max 0.5 Ohm Drain Source Saturation Voltage at Id=-4A, Vgs=-15V : typ -1.6 V , max -2 V Forward Transfer Admittance at Id=-4A, Vds=-10V : min 1 S, typ 1.8 S Input Capacitance at Vgs=0V, Vds=10V, f=1MHz : typ 1050 pF Output Capacitance at Vgs=0V, Vds=10V, f=1MHz: typ 450 pF Reverse Transfer Cap. at Vgs=0V, Vds=-10V, f=1MHz : typ 80 pF Times at Id=2A: Vgs=-15V, RL=2 Ohm : Turn On Delay : typ 20 ns Rise : typ 50 ns Turn Off delay : typ 90 ns Fall : typ 70 ns Body Drain Diode: Absolute Maximum Current : -8 A Forward Voltage at If=-4A, Vgs=0 : typ -0.9 V Reverse Recovery Time at If=-4A, Vgs=0, dIf/dt = 50 A/us : 300 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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2SJ129 Silicon P Channel Junction FET
for low frequency amplification
_______
| D G S |
|_______| bottom view
Absolute Maximum Ratings:
Vgds = 50 V
Id = -20 mA
Ig = -10 mA
Pd = 300 mW
Tstg = Tchannel = -55 to 150 grdC.
Characteristics at 25 grdC.:
Idss at Vds=-10V, Vgs=0 : min -0.5 mA, max -14 mA
Ranking:
P : -0.5... -3 mA
Q : -2 ... -6 mA
R : -4 ... -12 mA
S : -6 ... -14 mA
Igss at Vgs=30V, Vds=0 : max 0.1 uA
Vgds at Ig=100uA, Vds=0 : max 50 V
Vgs cutoff at Vds=-10V, Id=-10uA : min 0.2 V, max 3 V
Forward Transfer Admittance(Common Source) at
Vds=-10V, Vgs=0, f=1kHz : min 3 mS
Input Capacitance at the same conds.: typ 22 pF
Small Signal Reverse Transfer Cap.: typ 3.6 pF
Noise Voltage at Vds=-10V, Id=-1mA, Gv=80dB, Rg=100kOhm,
Function=FLAT : max 80 mV
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2SJ48, P-Kanal Power MOSFET, HITACHI 2SJ49, 2SJ49H 2SJ50, 2SJ50H complementary : 2SK133...135 ../H with Gate Protection Diodes, TO3 case Absolute Maximum Ratings: Vdsx : 2SJ48: -120 V, 2SJ49: -140 V, 2SJ50: -160 V Gate Source Voltage : +/- 14 V Drain Current : -7 A Dissipation : 100 W Junction Temperature : 150 grdC. Storage Temp.: -55 to 150 grdC. Characteristics at 25grdC.: Vds Breakdown Voltage at Vgs=10V, Id=-10mA : see Vdsx Gate Source Cutoff Voltage at Vds=-10V, Id=-100mA : min -0.15V, max -1.45V Drain Sorce Saturation Voltage at Vgs=-12V, Id=-7A(pulsed) : max -12 V Forward Transfer Admittance at Id=-3A, Vds=-10V : min 0.7S, typ 1 S, max 1.4S Capacitances at Vgs=-5V, Vds=-10V, f=1MHz : Input: typ 900 pF Output: typ 400 pF Reverse Transfer: typ 40 pF Times at Id=-4A, Vdd=-20V ( 2SJ..H : Id=-2A and Vgs=-10V ), Load = 2 Ohm to Vdd, 50 Ohm between Gate and Source: Turn On ( Delay + Rise): typ 230 ns , 2SJ..H : typ 150 ns Turn Off (Delay + Fall): typ 110 ns , 2SJ..H : typ 210 ns ______________________________________
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______________________________________ 2SJ55 P-Channel Power MOSFET , HITACHI 2SJ56, 2SJ56H complementary : 2SK175, 2SK176 with gate protection diodes, TO3 Absolute Maximum Ratings: Vdsx : 2SJ55: -180 V, 2SJ56: -200V Vgss = +/- 20V Id = -8 A P channel = 125 W Temp. channel= 150 grd C T storage = -55 to 150 grdC. Characteristics: Vds Breakdown Voltage at Id=-10mA, Vgs=10V: see Vdsx Gate to Source Cutoff Voltage at Vds=-10V, Id=-100mA : min -0.15 V, max -1.45 V Drain to Source Saturation Voltage at Vgd=0, Id=-8A : max -12 V Forward Transfer Admittance at Vds=-10V, Id=-3A : min 0.7 S, typ 1 S, max 1.4 S Capacitances at Vgs=-5V, Vds=-0V, f=1MHz : Input : typ 1200 pF Output : typ 700 pF Reverse : typ 60 pF Times for R load = 2 Ohm to Vdd, Rgs = 50 Ohm, at Id=-4A, Vds=-30V, (for 2SJ56H: Id=-2A and Vgs=-15V) Turn On Delay = typ 320 ns, 2SJ56H: 60 ns Turn Off Delay = typ 120 ns, 2SJ56H: 200 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
2SJ72 Silicon P- channel JFET
complementary : 2SK147
case TO92mod, 8.2 + 2.2 mm max height
_______
| D G S | bottom view
\_____/
Maximum Ratings:
Vgd = 25V
Ig = -10mA
Pd = 600mW
Tj = Tstg = -55...125 grdC
Characteristics:
Idss at Vds=10V : -5 to -30mA
Gate Source Cutoff Voltage at Vds=-10V, Id=-0.1uA:
min 0.3 V, max 2 V
Forward Transfer Admittance at Vds=-10V, Vgs=0, f=1kHz:
|Yfs| = min 30, typ 40 mS
Input Capacitance at Vds=-10V : typ 185 pF
Reverse Transfer Cap. at Vdg=-10V : typ 55 pF
Noise Figure at Vds=-10V, Id=-5mA, Rg=100 Ohm:
at 100Hz : max 10 db
at 1kHz : max 2 dB
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2SK317 N-Channel VHF Power MOSFET Hitachi My datasheet has no pinning declaration. Absolute Maximum Ratings : Vdss = 180 V Vgss = +/- 20 V Id = 8 A Pchannel = 120 W Tchannel = 150 grdC. Tstg = -55 to 150 grdC. Thermal Resistance Junction to Case : ??? Characteristics : Power Output at Vds=80V, Idq=100mA, Pin=8W, f=175MHz : min 80 W, typ 100 W Drain Efficiency at the same conditions : typ 60 % Gate Source Cutoff Voltage at Id=1mA, Vds=10V : min 0.5 V, max 3 V Idss at Vds=140V, Vgs=0 : max 1 mA Vds(on) at Id=4A, Vgs=10V : typ 3.8 V, max 5 V Forward Transfer Admittance at Id=3A, Vds=20V : min 0.9 S, typ 1.25 S Input Cap. at Vgs=5V, Vds=0, f=1MHz : typ 600 pF Output Cap. at Vgs=-5V, Vds=50V, f=1MHz : typ 90 pF Reverse Transfer Cap. at Vgd=-50V, f=1MHz : typ 0.5 pF From a diagram output power vs. input power at Vdd=80V, at 175 MHz: 40W at 1 W, 70W at 2W, 88W at 3W, 100W at 4W, 120W at 8W at 100 MHz: 100W at 1W, 140W at 2W, 165W at 5W, 180W at 8W ______________________________________
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______________________________________ 2SK370 N channel JFET complementary to 2SJ108 _____ |D G S| \___/ MAXIMUM RATINGS: Vdgs : -40 V Ig : 10 mA Pd 200 mW Tj, Tstg : -55 to 125 grdC. CHARACTERISTICS at Vds=10V : Idss at Vgs=0 : min 2.6 mA, max 20 mA 1) Vgs(off) at Id=0.1 uA : min -0.2 V, max -1.5 V Forward Transfer Admittance at Vgs=0 : min 8 mS, typ 22 mS Input Capacitance at Vgs=0, f=1 MHz : typ 30 pF Reverse Transfer Cap. at Id=0 : typ 6 pF Noise Figure at Id =1mA, Rg=1 kOhm, at f=10 Hz : typ 1dB, max 10dB at f= 1 kHz : typ 0.5 dB, max 2 dB 1) Idss Classification: GR : 2.6 ... 6.5 mA BL : 6 ... 12 mA V : 10 ... 20 mA ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2SK400 N-Channel MOSFET (without Gate protection !) case TO3P Gate - Drain/Flange - Source Absolute Maximum Ratings at 25 grdC.: Vds = 200 V Vgs = +/- 20 V Id = 8 A Id peak = 12 A Channel Dissipation = 100 W T channel = 150 grdC. Storage Temp.: -55 ... 150 grdC. Characteristics: Gate Source Cutoff Voltage at Vds=10V, Id=1mA : min 2 V , max 5 V Idss at Vgs=0 V, Vds=160 V : max 1 mA Static Drain Source On-state Resistance at Id=4A pulsed, Vgs=15V : typ 1.1 Ohm, max 1.75 Ohm Drain Source Saturation Voltage at Id=4A pulsed, Vgs=15V : typ 2 V , max 2.8 V Forward Transfer Admittance at Id=4A pulsed, Vds=10V : min 1 S, typ 1.8 S Input Capacitance at Vgs=0V, Vds=10V, f=1MHz : typ 750 pF Output Capacitance at Vgs=0V, Vds=10V, f=1MHz: typ 300 pF Reverse Transfer Cap. at Vgs=0V, Vds=10V, f=1MHz : typ 60 pF Times at Id=2A: Vgs=15V, RL=15 Ohm : Turn On Delay : typ 15 ns Rise : typ 25 ns Turn Off delay : typ 70 ns Fall : typ 40 ns Body Drain Diode: Absolute Maximum Current : 8 A Forward Voltage at If=4A, Vgs=0 : typ 0.9 V Reverse Recovery Time at If=4A, Vgs=0, dIf/dt = 50 A/us : typ 300 ns ______________________________________
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______________________________________ 2SK512 N- Channel Power MOSFET, high speed switching TO3 Absolute Maximum Ratings: Drain Source Voltage : 500 V Gate Source Voltage : +/- 20 V Drain Current : 12 A Peak : 20 A Body Drain Diode: Reverse Drain Current: 12 A Channel Dissipation : 125 W Channel Temperature : 150 grdC. Storage Temp.: -55 to 150 grdC. Characteristics: Idss at Vds=400V, Vgs=0: max 1 mA Gate Source Cutoff Voltage at Id=1mA, Vds=10V : min 2 V, max 4 V Drain Source ON Resistance at Id=6A, Vgs=15V : typ 0.55 , max 0.65 Ohm Forward Transfer Admittance at Id=6A, Vds=10V : min 2.5 S, typ 3.5 S Capacitances at Vds=10V, Vgs=0, f=1MHz: Input : typ 1800 pF Output : typ 400 pF Reverse Transfer : typ 50 pF Times at Id=2A, Vgs=15V, Rl=15 Ohm : Turn ON Delay: typ 20 ns Rise : typ 45 ns Turn Off Delay : typ 230 ns Fall : typ 70 ns Body Drain Diode Forward Voltage at Ibd=6A : typ 1 V Reverse Recovery Time at Ibd=6A, dIbd/dt = 100A/us : typ 400 ns (No specification of Thermal Resistance Junction to Case) ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2SK60-.. N channel Junction Power V-FET Maximum Ratings: Vdgo = 170 V Vsgo = 30V (2SK60-6 : 40V, 2SK60-8: 50V ) Id = 5 A Ig = 0.5 A Area of safe Operation = min 2.5 A at Vds=50V, t=100ms, 25 grdC. Pt = 63 W Tj = Tstg = -50 to 120 grdC. Thermal Resistance Junction to Case : max 1.5 grdC./W Characteristics : Vds(on) at Id=3A, Ig=0.2A, t=100ms : max 10 V Pinch off Voltage at Id=100mA, Vds=60V : min -7.5V, typ -18V, max -25V Input Capacitance at Vds=-15V (I think Vgs!), Vds=0V, f=1MHz: typ 190 pF Gain Bandwidth Product at Vds=20V, Id=0.5A : typ 20 MHz Output Resistance at Vds=20V, Id=1A ,f=1kHz : typ 16 Ohm From a diagram Id vs. Vsg : at Vds=20V, for a sample with Pinch off voltage=14.35V: 0 A at -9V, 0.4A at -6V, 1A at -4V, 3A at 0V (Depletion- Type!) ______________________________________
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______________________________________ 2SK613 N-Channel Junction FET from a SONY datasheet Absolute Maximum Ratings: Vdgo = 15 V Vsgo = 15 V Id = 50 mA Ig = 5 mA Pd = 150 mW Temp.:-55 to 150 grdC. Characteristics: Gate Cutoff Current at Vgs = -7V, Vds = 0V : -2 nA Idss : min 13.3 max 42 mA 2SK613-2 : 13.4 ... 21 mA 2SK613-3 : 19 ... 30.2 mA 2SK613-4 : 27.4 ... 42 mA Vgs off at Id=o.1 mA: min -0.65 V, max -2V Forward Transfer Admittance at Vds=5V, Vgs=0V, f=1kHz: min 23 mS, typ 30 mS Input Capacitance at the same conds.:typ 6.6 pF, max 7.5 pF Equivalent Input Noise Voltage at Id=10mA, Rg=0, f=1kHz: typ 4, max 7 nV/sqrootHz For a gate-grounded Test Circuit having L-C-Networks at the Source-Input and Drain-Output: Power Gain at Vds=5V, Id=10mA, f=100MHz: typ 14 dB Noise Figure at the same conds: typ 1.8 dB Reverse Transfer Capacitance : typ 1.6 pF ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2SK68 N-Channel Junction FET, low noise Audio Amp. Bottom View: _______ | D G S | \_____/ Absolute Maximum Ratings : Vdgo = 50 V Vsgo = 50 V Vdsx at Vgs=-2V : 50 V Id = 20 mA Ig = 10 mA Pt = 250 mW Tj = 125 grdC. Tstg = -55 to 125 grdC. Characteristics at 25 grdC.: Idss at Vds=10V, Vgs=0 : min 0.5 mA, typ 3 mA, max 12 mA Vgs(off) at Vds=10V, Id=10uA : min -0.13 V, typ -0.5 V, max -1.5 V | Yfs | at Vds=10V, Id=0.5mA, f=1kHz : min 4 mS, typ 5.2 mS | Yfs | at Vds=10V, Vgs=0, f=1kHz : min 4 mS, typ 12 mS Ciss at Vds=10V, Vgs=0, f=1MHz : typ 13 pF Crss at the same conds. : typ 2.6 pF And for 2SK68-A only: NF at Vds=10V,Vgs=0,Rg=1kOhm, f=10Hz : typ 5 dB, max 10 dB at 100 Hz : typ 1 dB, max 3 dB at 1 kHz : typ 0.6 dB, max 1.5 dB NV typ 15 mV ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2SK218 N Channel Junction FET, High mutual conductance, for video cameras. Bottom View: _______ | D S G | \_____/ Absolute Maximum Ratings : Vdgo = 15 V Vsgo = 15 V Id = 50 mA Ig = 5 mA Pt = 200 mW Tj = 150 grdC. Tstg = -55 to 150 grdC. Characteristics at 25 grdC.: Idss at Vds=5V, Vgs=0 : min 5 mA, max 42 mA Vgs(off) at Vds=5V, Id=100uA : max -3 V Mutual Conductance gm at Vds=5V, Vgs=0, f=1kHz : min 15 mS, typ 30 mS Ciss at Vds=5V, Vgs=0, f=1MHz : typ 8 pF From a diagram: Crss at Vds=10V : 1.5 pF, at Vds=1V : 2.5 pF Idss-Ranking: Typ ...P : 5 to 16 mA Typ ...Q : 14 to 24 mA Typ ...R : 20 to 32 mA Typ ...S : 28 to 42 mA ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
2SK79 Silicon N-Channel Junction V-FET
_______
| E B C | perhaps this means S G D ?!?
\_____/
bottom view
Absolute Maximum Ratings:
Vdgo = 120 V (at Id=0.1 mA)
Vsgo = 10 V (at Id=0.1 mA)
Id = 200 mA
Ig = 20 mA
Ptot = 750 mW
T junction = 120 grdC.
T stg = -50 to 150 grdC.
Thermal Resistance Junction to Ambient : max 126 grdC./W
Characteristics:
Idgo cutoff at Vdg=50V, Is=0 : max 200 nA
Igss cutoff at Vgs=6V, Vds=0 : max 200 nA
Drain to Source ON Voltage at Vgs=0.3V, Id=7mA : max 10 V
Pinch off Voltage at Vds=100V, Id=300uA :typ -4.5V, max 9.5 V
Voltage Amplification Ratio at Vds=50V, Id=4mA, f=1kHz:
min 15, typ 30
Ranking: no test circuit in the datasheet!
1 : 15 ... 25
2 : 21 ... 36
3 : 30 ... 50
4 : 42 ... 72
5 : 60 ...
Forward Transfer Conductance at the same conds.: typ 14 mS
Input Capacitance at the same conds.: typ 16 pF
Output Cap.... : typ 4 pF // 2 kOhm ??
Noise Figure at Vds=50V, Id=4mA, Rg=500 kOhm, f=10 Hz :
max 30 dB
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 2SK97 dual N-Channel Junction FET in dual in line case. Pins: 1 : Drain 2 2 : Gate 2 3 : Source 2 4 : Source 1 5 : Gate 1 6 : Drain 1 Absolute Maximum Ratings: Vdgo = 30 V Vsgo = 30 V Id = 20 mA (1 FET) Ig = 5 mA ( 1 FET) Ptot = 210 mW (2 FETs) Channel Temp. 100 grdC. Storage Temp.: -50 to 120 grdC. Characteristics: Idss at Vds=10V, Igs=0 : min 0.9 mA, max 14.3 mA Pinch off Voltage at Vds=10V, Id=30uA : min 0.18V, max 1.49 V Forward Transfer Conductance at Vgs=0V, Vds=10V : min 6.3 mS Reverse Transfer Capacitance (same conds.): typ 2.4 pF Input noise voltage at Rg=10kOhm, f=1kHz: typ 13 nV / sqareroot Hz Vgs difference between 2 FETs at Id=1mA: max 70 mV Classification: Rank 1 : Idss = 0.9 to 5.5 mA Rank 2 : Idss = 4.5 to 9.9 mA Rank 3 : Idss = 8.1 to 14.3 mA ______________________________________
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2SK974 N-Channel Power MOSFET
HITACHI
Absolute Maximum Ratings at 25 grdC.:
Vds = 60 V
Vgs = +/- 20 V
Id = 3 A
Id peak = 12 A
Body Drain Reverse Diode Idr = 3 A
P channel = 20 W
T channel = 150 grdC.
Storage Temp.: -55 ... 150 grdC.
Characteristics:
Gate Source Cutoff Voltage at Vds=10V, Id=1mA :
min 1 V , max 2 V
Idss at Vgs=0 V, Vds=50 V : max 100 uA
Drain Source ON- state Resistance at Id=2A,
at Vgs=10V : typ 0.15, max 0.18 Ohm
at Vgs=4V : typ 0.2, max 0.25 Ohm
Forward Transfer Admittance at Id=2A, Vds=10V :
min 2.4 S, typ 4 S
Input Capacitance at Vgs=0 V, Vds=10 V, f=1MHz : typ 400 pF
Output Capacitance at Vgs=0 V, Vds=10 V, f=1MHz: typ 230 pF
Reverse Transfer Cap. at Vgs=0 V, Vds=10 V, f=1MHz: typ 60 pF
Times at Id=2A, Vgs=10V, R L = 15 Ohm :
Turn ON Delay : typ 5 ns
Rise : typ 25 ns
Turn Off Delay : typ 180 ns
Fall : typ 75 ns
Body Drain Diode Forward Voltage at If=3A : typ 0.9 V
Reverse Recovery Time at If=3A, dIf/dt = 50A/us : typ 85 ns
______________________________________
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______________________________________
2SK107 N-channel junction FET
DC to VHF, low noise,
in TO92 case.
_______
| S G D |
\_____/
Absolute Maximum Ratings:
Vdgo = 27 V
Vsgo = 9 V
Id = 20 mA
Ig = 10 mA
Ptot = 250 mW
Tj = 100 grdC.
Tstorage = -30 to 120 grdC.
Characteristics at 25 grdC.:
Idss at Vds=10V, Vgs=0 : min 2.7 mA, max 12.1 mA
Pinch off Voltage at Vds=10V, Id=30uA : min -0.45V, max -3.85 V
Forward Transfer Conductance at Vds=10V,Vgs=0 : min 2.7 mS
Input Impedance at Vds=10V,Vgs=0, f=100MHz : typ 8 kOhm, 5 pF
Output Impedance at the same conds.: typ. 20 kOhm, 2 pF
Reverse Transfer Cap. at Vds=10V, f=1MHz : typ 1.8 pF
Noise at Vds=10V, Vgs=0, Rg=10kOhm, f=1kHz :
Input Noise Voltage : typ 13 nV/squareroot(Hz)
Noise Figure : typ 0.1 dB
Noise Figure at Vds=10V, Vgs=0, f=100 MHz: typ 2 dB
Power Gain at the same conds.: typ 18 dB
Idss- classes :
2SK107-2 : 2.7 ... 5.5 mA
-3 : 4.5 ... 7.7 mA
-4 : 6.3 ... 9,9 mA
-5 : 9.1 ... 12.1 mA
______________________________________
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______________________________________ 2SK133 N-Kanal Power MOSFET 2SK134, 2SK134H, 2SK135, 2SK135H complementary : 2SJ48...50 with Gate Protection Diodes, TO3 Absolute Maximum Ratings: Vdsx : 2SK133: 120V, 2SK134: 140V, 2SK135: 160V Gate Source Voltage : +/- 14 V Drain Current : 7 A Dissipation : 100 W Junction Temperature : 150 grdC. Storage Temp.: -55 to 150 grdC. Characteristics at 25grdC.: Drain Source Breakdown Voltage at Vgs=-10V, Id=10mA : see Vdsx Gate Source Cutoff Voltage at Vds=10V, Id=100mA : min 0.15V, max 1.45V Drain Sorce Saturation Voltage at Vgs=12V, Id=7A(pulsed) : max 12 V Forward Transfer Admittance at Id=3A, Vds=10V : min 0.7 S, typ 1 S, max 1.4 S Capacitances at Vgs=5V, Vds=10V, f=1MHz : Input: typ 600 pF Output: typ 350 pF Reverse Transfer: typ 10 pF Times at R load = 2 Ohm to Vdd, Rgs = 50 Ohm, at Vdd=20V, Id=4A for 2SK13xH : at Vgs=10V, Id=2A Turn On ( Delay + Rise): typ 180 ns , 2SK13xH: typ 90 ns Turn Off(Delay + Fall ): typ 60 ns , 2SK13xH: typ 110 ns ______________________________________
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______________________________________ From the TOSHIBA-databook Small Signal Ts 1989: The 2SK146 is a dual N-Channel junction FET ( 2FETS back-to back). Pair Characteristics |Vgs1-Vgs2| = max 20mV at Vds=10V,Id=5mA The 2SK147 is the single version. Pins: Bottom View, stamp = upside: Drain(Left) - Gate - Source Maximum Ratings: Vdg = 40V Ig = 10mA Power Diss. = 2 x 600mW Characteristics: Idss = 5 to 30mA Forward Transfer Admittance |Yfs| = min 30, typ 40 mS Input Capacitance = typ 75 pF Reverse Transfer Cap. = typ 15 pF Noise Figure at Vds=10V,Id=5mA,Rg=100Ohm: at 100Hz : max 10 db at 1kHz : max 2 dB ______________________________________
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______________________________________ 2SK1518 N-Channel Power MOSFET Absolute Maximum Ratings at 25 grdC.: Vdss = 500 V Vgss = +/- 30 V Id = 20 A Id ( peak) = 80 A Body Drain Diode Idr = 20 A P channel = 120 W T channel = 150 grdC. Storage Temp.: -55 to 150 grdC. Characteristics at 25 grdC.: Gate Source Leak Curr. at Vgs= +/-25V,Vds=0 : max +/- 10 uA Idss at Vds=400V, Vgs=0 : max 250 uA Gate Source Cutoff Voltage at Id=1mA, Vds=10V : min 2 V, max 3 V Static Drain Source ON resistance at Id=10A, Vgs=10V : typ 0.22 Ohm, max 0.27 Ohm Forward Transfer Admittance at Id=10A, Vds=10V: min 10 S, typ 16 S Capacitances at Vds=10V, Vgs=0, f=1MHz : Input : typ 3050 pF Output : typ 940 pF Reverse Transfer : typ 140 pF Times at Id=10A, Vgs=10V, RL=3 Ohm : Turn On Delay : typ 35 ns Rise : typ 130 ns Turn Off Delay : typ 240 ns Fall : typ 105 ns Body Drain Diode: Forward Voltage at If=20A, Vgs=0 : typ 1 V Reverse Recovery Time at If=20A, dIf/dt=100A/us: typ 120 ns ______________________________________
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______________________________________
2SK152 Silicon N-Channel Junction FET
_______
| D S G |
\_____/
Absolute Maximum Ratings:
Vdgo = 15 V
Vsgo = 15 V
Id = 50 mA
Ig = 5 mA
Pd = 300 mW
Tj = 100 grdC.
Tstg = -50 to 120 grdC.
Characteristics at 25 grdC.:
Igss at Vgs=-7V, Vds=0 : max -2 nA
Idss at Vds=5V, Vgs=0 : min 9.5 mA, max 42 mA 1)
Vgs(off) at Vds=5V, Id=100uA : min -0.55 V, max -2 V
Forward Transfer Admittance at Vds=5V, Vgs=0, f=1kHz :
min 21 mS, typ 30 mS
Input Capacitance at Vds=5V, Vgs=0, f=1MHz :
typ 8 pF, max 9 pF
Standard Circuit (Gate = Gnd, Tuned Input and Output)
at Vds=5V, Id=10mA, f=100MHz :
Power Gain : typ 15 dB
Noise Figure : typ 1.8 dB
Input Resistance : typ 3500 Ohm
Input Capacitance: typ 7.2 pF
Output Resistance : typ 3000 Ohm
Output Capacitance : typ 2.5 pF
Reverse Transfer Capacitance at Vds=5V, Vgs=0, f=1 MHz : typ 2 pF
1) Classification :
-1 : 9.5 to 14.8 mA
-2 : 13.4 to 21 mA
-3 : 19 to 30.2 mA
-4 : 27.4 to 42 mA
______________________________________
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______________________________________ 2SK1745 N channel Power MOSFET from a preliminary TOSHIBA datasheet Gate - Drain - Source Maximum Ratings at 25 grdC.: Vdss = 500 V Vdgr at Rgs=20 kOhm : 500 V Vgss = +/- 30 V Id = 18 A Id peak = 72 A Pd = 150 W Tj = Tstg = -55 to 150 grdC. Thermal Resistance Channel to case : max 0.833 grdC./W Characteristics at 25 grdC.: Gate Threshold Voltage at Vds=10V, Id=1mA : min 2 V, max 4 V Drain Source ON Resistance at Id=9A, Vgs=10V: typ 0.28 Ohm, max 0.36 Ohm Forward Transfer Admittance at Vds=10V, Id=9A: min 8 S, typ 10 S Capacitances at Vds=10V, Vgs=0, f=1MHz : Input : max 3300 pF Reverse Transfer : max 260 pF Output : max 540 pF ______________________________________
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______________________________________ 2SK175 N-Channel enhancement-mode MOSFET 2SK176, 2SK176H complementary : 2SJ55, 2SJ56, ..H with gate protection diodes, TO3 Absolute Maximum Ratings: Vdss = 180 V Vgss = +/- 20V Id = 8 A P channel = 125 W Temp. channel= 150 grd C T storage = -55 to 150 grdC. Characteristics: Gate to Source Cutoff Voltage at Vds=10V, Id=100mA : min 0.15 V, max 1.45 V Drain to Source Saturation Voltage at Vgd=0, Id=8A : max 12 V Forward Transfer Admittance at Vds=10V, Id=3A : min 0.7 S, typ 1 S, max 1.4 S Capacitances at Vds=10V, Vgs=-5V, f=1MHz : Input : typ 800 pF Output : typ 600 pF Reverse Transfer Cap. : typ 15 pF Times at R load = 2 Ohm to Vdd, Rgs = 50 Ohm, at Id=4A, Vdd=30V, (for 2SK176H: Vgs=15V, Id=2A, Rload=15 Ohm) Turn On Time : typ 250 ns, 2SK176H: typ 60ns Turn Off Time : typ 90 ns, 2SK176H: typ 200 ns ______________________________________
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______________________________________ 2SK2113 GaAs HEMT Top View (SMD-case): Source Gate _ _ _________ | | |_________| _ ___ Drain Source(large pin) Absolute Maximum Ratings: Vds = 3.5 V Vgso = -3 V Vgdo = -3 V Id = 60 mA Pchannel = 100 mW Tchannel = 125 grdC. Tstg = -55 to 125 grdC. Characteristics at 25 grdC.: Igss at Vds=0,Vgs=-3V : max -10 uA Idss at Vds=2V, Vgs=0 pulse test : min 12mA, max 60 mA Gate Source Cutoff Voltage at Vds=2V, Id=100uA : min -0.3V, max -2.5 V Forward Transfer Admittance at Vds=2V,Id=10mA, f=1kHz: min 30 mS, typ 50 mS Noise Figure at Vds=2V, Id=10mA, f=900 MHz : typ 0.8 dB, max 1.2 dB Power Gain at the same conds.: min 15.5 dB, typ 18 dB ______________________________________
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______________________________________ 2SK298 N-Channel Power MOSFET manufactured by HITACHI TO3 case Absolute Maximum Ratings: Vdss = 400V Vgss = +/- 20V Id = 8 A Id peak = 12 A P channel = 100 W Temp. channel= 150 grd C Characteristics: Gate to Source Cutoff Voltage at Vds=10V, Id=1mA : min 1V, max 4.5V Drain to Source Saturation Voltage at Vgs=15V, Id=4A : typ. 4.4V, max 6V Forward Transfer Admittance at Vds=10V, Id=4A : min 1.2 S, typ 1.7 S (S=1/Ohm) Capacitances at Vds=10V, Vgs=0V, f=1MHz : Input : typ 800 pF Output : 180 pF Reverse Transfer Cap. : typ 20 pF Times at Id=2A, Vgs=15V, RL=15 Ohm : Turn On Time : typ 50 ns Turn Off Time : typ 120 ns ______________________________________
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______________________________________ 2SK403 N-Channel Power MOSFET Absolute Maximum Ratings at 25 grdC.: Vds = 450 V Vgs = +/- 20 V Id = 8 A Id peak = 12 A Channel Dissipation = 100 W T channel = 150 grdC. Storage Temp.: -55 ... 150 grdC. Characteristics: Gate Source Cutoff Voltage at Vds=10V, Id=1mA : min 2 V , max 5 V Idss at Vgs=0 V, Vds=360 V : max 1 mA Static Drain Source On-state Resistance at Id=4A pulsed, Vgs=15V : typ 1.1 Ohm, max 1.75 Ohm Drain Source Saturation Voltage at Id=4A pulsed, Vgs=15V : typ 4.4 V , max 7 V Forward Transfer Admittance at Id=4A pulsed, Vds=10V : min 1.2 S, typ 1.7 S Input Capacitance at Vgs=0V, Vds=10V, f=1MHz : typ 800 pF Output Capacitance at Vgs=0V, Vds=10V, f=1MHz: typ 180 pF Reverse Transfer Cap. at Vgs=0V, Vds=10V, f=1MHz : typ 20 pF Times at Id=2A: Vgs=15V, RL=15 Ohm : Turn On Delay : typ 15 ns Rise : typ 35 ns Turn Off delay : typ 85 ns Fall : typ 35 ns Body Drain Diode: Absolute Maximum Current : 8 A Forward Voltage at If=4A, Vgs=0 : typ 0.85 V Reverse Recovery Time at If=4A, Vgs=0, dIf/dt=100A/us : typ 400 ns The datasheet has a diagram Forward Transfer Admittance vs. Frequency : >1.5 S until 1 MHz ; 0.75 S at 10 MHz, 0.5 S at 20 MHz. ______________________________________
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______________________________________ 2SK318 N-Channel VHF Power MOSFET HITACHI My datasheet has no pinning declaration. Absolute Maximum Ratings : Vdss = 180 V Vgss = +/- 20 V Id = 4 A Pchannel = 70 W Tchannel = 150 grdC. Tstg = -55 to 150 grdC. Thermal Resistance Junction to Case : ??? Characteristics : Power Output at Vds=80V, Idq=100mA, Pin=4W, f=100MHz : min 60 W, typ 90 W Drain Efficiency at the same conds.: typ 80 % Gate Source Cutoff Voltage at Id=1mA, Vds=10V : min 0.5 V, max 3 V Idss at Vds=140V, Vgs=0 : max 1 mA Vds(on) at Id=4A, Vgs=10V : typ 3.8 V, max 6 V Forward Transfer Admittance at Id=1.5A, Vds=20V : min 0.4 S, typ 0.6 S Input Cap. at Vgs=5V, Vds=0, f=1MHz : typ 300 pF Output Cap. at Vgs=-5V, Vds=50V, f=1MHz : typ 45 pF Reverse Transfer Cap. at Vgd=-50V, f=1MHz : typ 0.3 pF From a diagram output power vs. input power at Vdd = 80V at f = 175 MHz : 20W at 0.5 W, 35W at 1W, 50W at 2W, 60W at 4W at f = 100 MHz : 50W at 0.5W, 70W at 1W, 83W at 2W, 90W at 4W ______________________________________
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______________________________________ 2SK410 N-Channel VHF Power MOSFET HITACHI The cutted lead is the Collector, opposite Gate, the other: Source Absolute Maximum Ratings : Vdss = 180 V Vgss = +/- 20 V Id = 8 A Pchannel = 120 W Tchannel = 150 grdC. Tstg = -55 to 150 grdC. Thermal Resistance Junction to Case : ??? Characteristics : Power Output at Vds=80V, Idq=100mA, Pin=5W, f=28MHz : min 140 W, typ 180 W Drain Efficiency at the same conds.: typ 80 % Gate Source Cutoff Voltage at Id=1mA, Vds=10V : min 0.5 V, max 3 V Idss at Vds=140V, Vgs=0 : max 1 mA Vds(on) at Id=4A, Vgs=10V : typ 3.8 V, max 6 V Forward Transfer Admittance at Id=3A, Vds=20V : min 0.9 S, typ 1.25 S Input Cap. at Vgs=5V, Vds=0, f=1MHz : typ 440 pF Output Cap. at Vgs=-5V, Vds=50V, f=1MHz : typ 75 pF Reverse Transfer Cap. at Vgd=-50V, f=1MHz : typ 0.5 pF Power Gain at IMD<=-30dB, delta f=20kHz : typ 17 dB From a diagram output power vs. input power at Vds=80V, Idq=300mA, delta f= 20 kHz(2 tones), f=28MHz : 40 W PEP at 0.1 W PEP, ~ linear until 160 W PEP at 0.8 W PEP, 180 W PEP at 1 W PEP. Intermodulation Distortion vs. Output Power at the same conditions: -40dB at 20W PEP, -43 dB at 40W PEP, -40dB at 50W PEP, -30dB at 100W PEP, -25dB at 120W PEP. Test Circuit: 1 kOhm ( and 0.1uF ) from Drain to Gate, 100 Ohm Gate to Gnd. ______________________________________
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______________________________________ 2SK414 N-Channel Power MOSFET HITACHI complementary: 2SJ119 Absolute Maximum Ratings at 25 grdC.: Vds = 160 V Vgs = +/- 20 V Id = 8 A Id peak = 12 A Channel Dissipation = 100 W T channel = 150 grdC. Storage Temp.: -55 ... 150 grdC. Characteristics: Gate Source Cutoff Voltage at Vds=10V, Id=1mA : min 2 V , max 5 V Idss at Vgs=0 V, Vds=140 V : max 1 mA Static Drain Source On-state Resistance at Id=4A, Vgs=15V : max 0.5 Ohm Drain Source Saturation Voltage at Id=4A, Vgs=15V : typ 1.6 V , max 2 V Forward Transfer Admittance at Id=4A, Vds=10V : min 1 S, typ 2 S Input Capacitance at Vgs=0V, Vds=10V, f=1MHz : typ 800 pF Output Capacitance at Vgs=0V, Vds=10V, f=1MHz: typ 330 pF Reverse Transfer Cap. at Vgs=0V, Vds=10V, f=1MHz : typ 60 pF Times at Id=2A: Vgs=15V, RL=2 Ohm : Turn On Delay : typ 15 ns Rise : typ 35 ns Turn Off delay : typ 60 ns Fall : typ 50 ns Body Drain Diode: Absolute Maximum Current : 8 A Forward Voltage at If=4A, Vgs=0 : typ 0.9 V Reverse Recovery Time at If=4A, Vgs=0, dIf/dt=50A/us : typ 250 ns ______________________________________
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______________________________________ 2SK43 N-Channel Junction FET Bottom View: _______ | D S G | \_____/ Absolute Maximum Ratings : Vdgo = 30 V Vsgo = 50 V Id = 20 mA Ig = 5 mA P = 300 mW Tj = 100 grdC. Tstg = -50 to 120 grdC. Characteristics : Idss at Vds=10V, Vgs=0 : min 0.9 , max 14.3 Pinch off Voltage at Vds=10V, Id=30 uA : min 0.18 V, max 1.49 V On State Resistance: 2SK43 S-D : max 80 Ohm Forward Transconductance at Vds=10V, Vgs=0, f=1 kHz : min 6.3 mS Input Impedance at Vds=10V, Vgs=0, f=100MHz: typ 1.2 kOhm ||13pF Output Capacitance at .... , 100 MHz: typ 2.7 pF Reverse Transfer Cap. at 1MHz : typ 2.4 pF Gate to Drain = G to Source Cap. at f=1MHz : typ 7 pF Input Noise Voltage at Vds=10V, Vgs=0: f=1 kHz, Rg=10 kOhm : typ 13 nV/squareroot(Hz) f=10 Hz, Rg=100 kOhm : typ 39 ... Noise Figure at the same conds.: typ 0.1 dB 2SK43-4 : Idss = 6.3...9.9 mA, Vp-off = 0.58...1.21 V ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!